Synaptic transistor based on two-dimensional semiconductor material and preparation method of synaptic transistor

Abstract

The invention discloses a synaptic transistor based on a two-dimensional semiconductor material and a preparation method of the synaptic transistor. The synaptic transistor comprises an insulating substrate, and a channel, a source electrode, a drain electrode and a gate electrode which are arranged on the substrate, wherein the channel is a two-dimensional semiconductor material; the source electrode and the drain electrode are arranged at the two ends of the channel respectively and form an ohmic contact with the channel material; the gate electrode and an electrical interconnection system formed by the channel, the source electrode and the drain electrode are kept in electronic insulation; an organic electrolyte covers a channel region and most of the gate electrode and comprises an organic carrier capable of being electrically insulated and ions capable of being migrated, and effective ion control of the gate to the channel material is formed. According to the synaptic transistor based on the two-dimensional semiconductor material and the preparation method of the synaptic transistor, an ion attachment-intercalation mechanism is utilized, and the characteristics of large surface area and adjustable resistance value of the two-dimensional material are combined, so that the device shows long-term and short-term synaptic plasticity, and the two characteristics can change witheach other along with the change of a gate signal. Meanwhile, the device has good linearity and ultralow operational power consumption, and the implementation and large-scale integration application of a high-precision neuromorphic device are facilitated.

Description

technical field [0001] The invention belongs to the field of semiconductor devices and relates to a synapse transistor, in particular to a device structure design and a preparation method of a synapse transistor based on a two-dimensional semiconductor material. Background technique [0002] In recent years, due to the possible extremely high computing efficiency, extremely low computing power consumption and the great potential to replace the Von Neumann computing architecture, neuromorphic computing has attracted widespread attention. Therefore, people pay more and more attention to realize the basic unit of neuromorphic devices - neuromorphic devices. Among them, synaptic devices that simulate the morphology and function of biological synapses have been highly valued. [0003] Biological synapses have a presynaptic membrane-synaptic cleft-postsynaptic membrane structure, and artificial synaptic devices also have a similar structure. Traditional synaptic devices represen...

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Problems solved by technology

[0007] 1) MoO 3 The interlayers of such crystal materials are connected by covalent bonds. The existence of covalent bonds makes the interlayer interaction relatively close, and the embedding of larger ions cannot be realized. Therefore, ions can only be attached to the upper surface of the material to realize the resistance value transformation of the upper layer material. It is difficult to achieve effective control of the resistance of thicker channel materials;

[0008] 2) The linearity and symmetry of the device are relatively poor, which is not conducive to the realization of high-precision artificial neuromorphic computing;

[0010] 4) Oxide materials have weak semiconductor properties, and it is difficult to form a large range of resistance transitions under control (usually only within 2 times the resistance value change), which is not conducive to the simulation of biological synaptic signals, and is also not conducive to follow-up Signal processing of circuits;

[0011] 5) Due to the difficulty in controlling the resistance, it is usually necessary to apply a higher voltage pulse (~2.5V) at the source and drain terminals to achieve a more significant change in current, which leads to an increase in leakage current and a significant increase in device power consumption;

[0012] 6) Ionic liquids are liquid and easy to flow, which is not conducive to the stability and integration of devices

[0014] 1) Lithium cobalt oxide itself is not very semiconducting, and it is difficult to achieve effective resistance adjustment at low voltages. Therefore, a higher working voltage (~4V) is required to achieve a larger resistance change, but usually the resistance change is only at 2 Within times;

[0015] 2) The lithium cobalt oxide system is not a conventional semiconductor system, and it is difficult to prepare devices using it, which is not conducive to large-scale integrated applications;

[0016] 3) The lithium cobalt oxide channel material has high requirements on the source and drain materials, and can only be a material rich in lithium ions, which is not conducive to the expansion and application of devices;

[0018] 1) It is difficult for organic channel materials to effectively achieve proportional reduction in size through existing processes, so it is difficult to achieve high-density integration of devices;

[0019] 2) The properties of organic channel materials are usually not stable enough to achieve the goal of long-term work;

[0020] 3) The semiconductivity of organic channel materials is not obvious, and the change range of resistance value is small, so it is difficult to achieve efficient ion regulation

[0021] It can be seen that it is difficult for existing synaptic devices to achieve good stability, low computing power consumption and the potential for large-scale integrated applications

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