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2 results about "Memory process" patented technology

Semiconductor device structure and method of manufacture

PendingCN122373452AMemory processDevice material
This invention provides a semiconductor device structure and manufacturing method. The structure includes a semiconductor substrate having N-type and P-type device regions and corresponding gate structures; a dielectric barrier layer is located on the semiconductor substrate and P-type gate structure in the P-type device region; a stress layer is located on the semiconductor substrate and N-type gate structure in the N-type device region, and is also located on the dielectric barrier layer in the P-type device region. This invention introduces a dielectric barrier layer in a full-coverage stress memory process, subjecting the N-type device to high tensile stress to improve performance, while simultaneously reducing the tensile stress on the P-type device to avoid performance degradation. This approach can significantly reduce the lower limit of SRAM operating voltage, improve static noise margin and write margin, and the process is simple and highly compatible.
Owner:HUA HONG SEMICON WUXI LTD