The invention relates to a
semiconductor structure and a manufacturing method thereof. The
semiconductor structure comprises a substrate; the memory unit is arranged on the substrate, the memory unit comprises a
transistor and a
capacitor, the
transistor comprises a first source / drain
electrode, a grid
electrode, a
second source / drain
electrode and a
semiconductor layer surrounding the side wall of the grid electrode, the first source / drain electrode, the
second source / drain electrode and the semiconductor layer are sequentially arranged in the first direction, and the first source / drain electrode and the
second source / drain electrode are connected with the grid electrode through the semiconductor layer; the
capacitor is arranged on one side of the second source / drain electrode and covers part of the side surface of the semiconductor layer; the
bit line is arranged on one side of the first source / drain electrode and covers part of the side face of the semiconductor layer, the contact area of the
bit line and the semiconductor layer is smaller than the contact area of the
capacitor and the semiconductor layer, the contact area of the
bit line and the
transistor is reduced, and the opposite area of the bit line and the grid electrode of the transistor is reduced; therefore, the
parasitic capacitance between the bit line and the grid electrode of the transistor is reduced, and the reading capability of the transistor is improved.