521 results about "Surface emission" patented technology

The invention discloses a container coating thickness online detection system and method, and the system comprises a non-contact thickness measurement unit which is used for transmitting modulation light to the surface of a container in real time according to the infrared light thermal modulation principle to excite a coating to generate a thermal wave signal, and determining the coating thickness through detecting the thermal wave reflection delay; the multi-mode executing mechanism is used for selecting a robot or a truss to carry the thickness measuring unit according to the specification of the container, and receiving a control instruction to drive the thickness measuring unit to move to a target detection point of the container according to a preset path; the three-dimensional positioning system is used for detecting the position deviation of the container entering the measuring station and feeding back the space coordinates of the container to the control system; and the control system is used for generating a motion path instruction according to the size of the container and a preset sampling rule, and receiving the coating thickness data of the thickness gauge in real time to generate a detection report, so that the precision, intelligence and high efficiency of container coating detection are realized.

The invention provides a photonic crystal surface emitting laser and a manufacturing method thereof, the photonic crystal surface emitting laser comprises a gain assembly and a photonic crystal assembly, and the gain assembly comprises a semiconductor substrate, a carrier transport layer and an active layer which are stacked in sequence; the photonic crystal assembly comprises a silicon-on-insulator structure and a photonic crystal structure formed on the silicon-on-insulator structure; the active layer and the photonic crystal structure are combined in a bonding mode so that light feedback and surface emission can be achieved through the photonic crystal structure when the active layer emits light. According to the photonic crystal surface emitting laser and the manufacturing method thereof, the key components of the photonic crystal surface emitting laser are separately manufactured and integrated through bonding, so that the manufacturing process is simplified, the manufacturing cost is reduced, the yield is improved, the process of each module can be independently optimized, and the risk of failure of the whole process is reduced.

The invention discloses an LED dimming system and method, and the system comprises a white light LED which is used for emitting a spectrum in a 400-650 nm wave band; at least three red light LEDs of blue light excitation fluorescent powder respectively emit red light with different central wavelengths, the central wavelength of the first red light LED is 660nm + / -2nm, the half-peak width is less than or equal to 15nm, and an I < n > GaA < l > P material vertical cavity surface emission structure is adopted; the central wavelength of the second red light LED is 730nm + / -3nm, the half-peak width is less than or equal to 20nm, and the second red light LED adopts an A < l > GaAs material quantum well structure; the center wavelength of the third red light LED is 780nm + / -5nm, the half-peak width is less than or equal to 25nm, and a GaAsP material gradient refractive index waveguide structure is adopted; the driving control module comprises three independent constant-current driving units which are used for respectively controlling the current and PWM duty ratio of each red light LED; the optical mixing module is composed of a two-stage integral rod and a micro lens array and is used for realizing uniform mixing of spectrums.

Systems and methods for laser-based surface processing operations on a semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface. The method includes providing emission of one or more lasers to the surface of a semiconductor workpiece at a non-perpendicular incidence angle relative to the surface. The method includes imparting relative motion between the one or more lasers and the semiconductor workpiece while providing emission of the one or more lasers to the surface of the semiconductor workpiece at the non-perpendicular incidence angle.

The embodiment of the invention discloses an adjustable ring laser welding system and method based on intelligent laser-assisted wire filling. According to the method, a laser emitting module is used for emitting a corresponding laser beam to the surface of a welding piece, and the shape of the laser beam is adjustable and annular; the wire filling module is used for conveying welding wires to the welding part; and the feedback module is used for acquiring the temperature and morphology in a molten pool corresponding to a welding part in the welding process to generate corresponding real-time monitoring data, and determining a feedback signal of the laser emission module and a feedback signal of the wire filling module based on the real-time monitoring data. According to the embodiment of the invention, intelligent and self-adaptive adjustment of the welding process can be realized through multi-dimensional information fusion and closed-loop control, the dependence on skills of operators is reduced while the welding quality is improved, and the production efficiency and the product yield are improved.

The invention discloses a surface emitting laser which solves the problems that a laser is poor in single-mode working stability and high in preparation process difficulty. The surface emitting laser comprises a substrate and an epitaxial structure which are arranged in a stacked mode, the epitaxial structure is provided with a plurality of holes, the section of each hole is roughly in a T shape, the sections are parallel to the substrate, filler is arranged in the holes, and the refractive index of the filler is different from that of the epitaxial structure. Under the same mode field area and surface emission coupling efficiency, the threshold gain difference between the base mode and the high-order resonance mode of the laser is large, and the stability of the single-mode working state is high. And the hole machining difficulty of the T-shaped structure is low.

A lighting device for a motor vehicle, in particular a high-definition headlamp, includes an imaging component that has an active surface on which light-emitting diodes or laser diodes are arranged in a matrix to generate pixels in a light distribution in a targeted manner, and a projection lens with which the light emitted from the active surface is projected outward from the motor vehicle when the lighting device is in operation. The lighting device is designed to switch the projection lens from a first setting to a second and from the second setting to the first. The projection lens has a first focal length in the first setting, and a second focal length in the second setting, which is greater than the first focal length.

The invention relates to an integrated component group comprising: a carrier, in particular a submount, with a first main surface and an opposing second main surface; a laser arranged on the carrier on the first main surface and having a first light-emitting surface and an opposing second light-emitting surface, wherein the laser is configured to emit more laser light via the first light-emitting surface than via the second light-emitting surface during its intended use; and a photodiode integrated into the carrier and configured to detect laser light emitted by the laser from the second light-emitting surface.

The invention belongs to the technical field of defect detection, and particularly relates to a mirror surface type surface defect detection method and system, a laser device is used for emitting a laser beam to a detected mirror surface type surface, the laser beam is reflected on a receiving plate through the detected mirror surface type surface to form an elliptic arc scanning path, and the elliptic arc scanning path is discretized into a plurality of continuous path points; obtaining a theoretical reflection light spot track of the roi area to be detected on the receiving plate, dividing the theoretical reflection light spot track into multiple equal parts, and establishing a mapping relation with each path point; the method comprises the following steps: controlling a laser to scan a detected mirror surface type surface along an elliptic arc scanning path, identifying path points corresponding to defects, recording actual position coordinates on a receiving plate, and obtaining equal division point positions on a theoretical reflection light spot track; acquiring an optical path offset, and determining normal vector deflection information of the defect at the surface of the detected mirror surface; obtaining a three-dimensional space coordinate of the defect; and constructing a three-dimensional model of the detected mirror surface type surface, and marking defect positions.

According to one embodiment, an optical element includes a first member. The first member includes a first region along a first plane. The first region includes a plurality of first structures. The plurality of first structures are arranged along a first direction at a first pitch and along a second direction at a second pitch. The first direction is along the first plane. The second direction is along the first plane and crosses the first direction. The first pitch is longer than the second pitch. A first length of the first region along the first direction is longer than a second length of the first region along the second direction.

3D printing device and 3D printing method. The device comprising:a build platform having an external surface;means for providing a polymerizable fluid resin on said surface;a radiation source, to emit a radiation beam to said surface;beam positioning means, to variably position an impinging point of said beam; andmeans for controlling said source and said positioning means to manufacture a 3D tubular object according to a model;wherein the build platform comprises a stem forming a tubular shaped surface around a longitudinal axis, so that said external surface of said build platform is comprised in said tubular shaped surface, and said positioning means is configured to variably position said impinging point of said beam on different points of said fluid resin provided on said tubular shaped surface.

The invention relates to the technical field of coal quality detection, in particular to a multi-source fusion spectrum coal quality rapid detection device and method. The near-infrared spectrum detection module is used for emitting near-infrared square light spots to the surface of the target coal sample so as to detect the overall spectrum characteristic data of the target coal sample; the X fluorescence spectrum detection module is used for performing multi-angle spectrum detection on the target coal sample to obtain element composition data in the target coal sample; the laser sensing module is used for vertically emitting a laser beam to the target coal sample and receiving corresponding reflected light so as to determine height information of the surface of the target coal sample; and the data processing module is used for fusing the overall spectral feature data and the element component data, calibrating fusion information according to the height information, and performing data processing operation on the spectral compensation information to calculate various coal quality indexes corresponding to the target coal sample, so that the adaptability to coal samples in different states is improved, and the coal quality index detection accuracy is improved. And the real-time detection requirement in the coal production process is met.

A surface-emitting laser element includes: a first guide layer including a photonic crystal layer that is formed on a c plane of a group-3 nitride semiconductor and includes air holes arranged with two-dimensional periodicity in a plane parallel to the photonic crystal layer, and an embedding layer that is formed on the photonic crystal layer and closes the air holes; an active layer formed on the first guide layer; and a second guide layer formed on the active layer, wherein an air hole set including at least a main air hole and a sub-air hole smaller in size than the main air hole is arranged at each square lattice point in the plane parallel to the photonic crystal layer, and wherein the main air hole has a regular-hexagonal prism shape, a long-hexagonal prism shape, or an elliptic cylindrical shape with a major axis parallel to a <11-20> axis.

The invention discloses a temperature control method, device and equipment for semiconductor equipment and a storage medium, and relates to the technical field of temperature control, and the method comprises the steps: calculating the equivalent radiation temperature of the brightness of a slit cavity observation band based on the brightness of the slit cavity observation band in an edge infrared observation annular region of a rapid heat treatment furnace and the surface emissivity of a wafer; solving the equivalent temperature of the inner edge of the quartz clock cover; on the basis of the equivalent radiation temperature and the equivalent temperature of the inner edge of the quartz clock cover, net radiation heat incoming power transmitted to a wafer edge belt of the wafer by an annular slit radiation cavity in the rapid heat treatment furnace is calculated; and solving a target lamp area power replacement vector of the rapid heat treatment furnace based on the net radiation heat incoming power. According to the invention, the initiative and accuracy of wafer edge temperature control can be improved.

A vertical cavity surface emitting laser includes an oxide substrate having a first face and a second face at an opposite side from the first face; a semiconductor section disposed on the first face; a dielectric filter layer disposed between the semiconductor section and the first face and having a reflective spectrum configured to provide an optical window; a first DBR mirror; and a second DBR mirror disposed at a curved surface of the second face. The first DBR mirror, the semiconductor section, the dielectric filter layer, the oxide substrate, and the second DBR mirror are arranged in a first axial direction to form an extended cavity. The semiconductor section is disposed between the dielectric filter layer and the first DBR mirror, and includes a p-type III nitride region, an n-type III nitride region, and a III nitride active region between the p-type and n-type III nitride regions.

A LiDAR performance test system according to the present invention comprises a target that can rotate vertically or horizontally and a LiDAR device disposed to be spaced a predetermined distance apart from the target. The LiDAR device comprises: a transmitter for emitting light toward the surface of the target; and a receiver for receiving the light reflected from the surface of the target, wherein the target is disposed such that the path of light emitted from the transmitter toward the surface of the target and the path of reflected light received from the surface of the target by the receiver do not match or overlap. According to the present invention, the system for testing the performance of LiDAR by considering the surface reflection characteristics of the target is provided, and thus can contribute to improving the accuracy and reliability of LiDAR performance.

The present invention relates to a multi-focus type ultrasonic generator comprising: a casing unit for generating ultrasonic waves; an ultrasonic transducer unit which is mounted on the casing unit for generating ultrasonic waves and which emits ultrasonic waves toward one surface of the casing unit for generating ultrasonic waves; and a multi-focus lens unit which is mounted on one surface of the casing unit for generating ultrasonic waves, and through which the ultrasonic waves generated in the ultrasonic transducer unit pass to form, in the passing ultrasonic waves, at least two ultrasonic focal points having different arrival positions in the skin, and thus, since a plurality of ultrasonic focal points having different arrival positions in the skin are emitted on the skin, treatment time can be significantly reduced and treatment efficiency and a treatment effect can be improved.

The invention relates to the field of yarn nondestructive testing, and provides a nondestructive testing system and method for ring spinning 300 or more extra-high count yarns, and the system comprises infrared photoelectric sensing modules which are used for transmitting infrared rays with a preset wavelength to the surface of a steel collar ring at a preset elevation angle by using each gated infrared photoelectric module, receiving infrared light reflected by the steel collar ring when the steel wire ring rotates along the steel collar ring, and converting the light intensity of the infrared light into an electric signal; the multi-channel parallel capture module is used for carrying out spindle speed parallel estimation by combining ADC sampling through a multi-channel capture strategy and a low-power-consumption optimization strategy, and judging the current yarn state; the comparator threshold value self-adaption module is used for dynamically adjusting the threshold value of the comparator through a self-adaption threshold value strategy; and the light intensity self-adaptive regulation and control module is used for adjusting the emission light intensity of the infrared photoelectric module through a light intensity self-adaptive regulation and control strategy in combination with PWM output. According to the invention, real-time accurate identification and early warning of yarn abnormity can be realized.

The invention provides an on-chip integrated laser light source and an optical coupling integration method thereof.The on-chip integrated laser light source comprises a silicon optical substrate and a light source chip assembly integrated on the silicon optical substrate, and the silicon optical substrate comprises an optical signal transmission waveguide; the light source chip assembly comprises a surface-emitting distributed feedback laser chip so as to generate laser beams emitted in the direction perpendicular to the surface of the chip. The on-chip integrated laser light source further comprises a grating coupling structure arranged between the surface emission distributed feedback laser chip and the optical signal transmission waveguide. The light-emitting surface of the surface-emitting distributed feedback laser chip is arranged towards the silicon light substrate, and a laser beam generated by the surface-emitting distributed feedback laser chip is directly projected and coupled into the light signal transmission waveguide through the grating coupling structure; the surface-emitting distributed feedback laser chip is fixedly combined on the silicon optical substrate through a flip chip technology, so that the high-precision end face alignment requirement of the heterogeneous integrated waveguide is converted into high-efficiency grating coupling based on a surface light emitting mode. In this way, harsh end face coupling is converted into efficient grating coupling.

The invention provides a photoelectric packaging structure. The structure comprises a first substrate, an electric integrated chip and a first optical integrated chip, wherein the electric integrated chip is located on the surface of one side of the first substrate. The first optical integrated chip internally comprises a plurality of vertical cavity surface emitting lasers which are distributed in a matrix, the plurality of first optical integrated chips circumferentially surround the electric integrated chip, and each vertical cavity surface emitting laser comprises a light emitting part located at the bottom of the substrate. Wherein the vertical cavity surface emitting laser emits an optical signal towards the surface of one side of the first substrate through the light emitting part based on signal data of the electric integrated chip. Optical signals do not need to be transmitted at the tops of the electric integrated chip and the first optical integrated chip, and a reflection structure does not need to be arranged, so that heat dissipation can be performed at the tops of the electric integrated chip and the first optical integrated chip, the heat dissipation space is increased, the heat dissipation rate is improved, the working temperature of the electric integrated chip and the optical integrated chip is reduced, and the service life of the electric integrated chip is prolonged. And the reliability of the photoelectric packaging structure is improved.

The invention discloses a surface-emitting laser and a surface-emitting laser preparation method, which are applied to the field of lasers, and the surface-emitting laser comprises a signal area, an amplification area and a surface-emitting area, each of the signal region, the amplification region and the surface emission region comprises a substrate, an epitaxial layer grown and prepared on the surface of the substrate, and a post-process layer prepared and formed on the surface of the epitaxial layer and the surface of the substrate; the epitaxial layer in the surface emission region comprises a passive second-order grating layer; and the volume of the active region in the epitaxial layer in the signal region is smaller than that of the active region in the epitaxial layer in the amplification region. According to the surface emitting laser, the signal area, the amplification area and the surface emitting area in the surface emitting laser are separately prepared, function separation of the signal area, the amplification area and the surface emitting area is achieved, the surface emitting area internally provided with the passive second-order grating layer is matched, and the surface emitting laser capable of improving the output power and the modulation rate at the same time is achieved.

According to an aspect, a detection device includes: an optical sensor comprising a plurality of light-receiving elements configured to receive light; and a front light that is located on an object to be detected side of the optical sensor and comprises a light guide film and a plurality of light sources configured to emit light to a first side surface of the light guide film. A wire-grid polarizer configured to separate the light incident from the light source into first polarized light and second polarized light is located between the optical sensor and the front light.

A vehicular laminated glass includes a first glass plate having a first main surface and a second main surface, a second glass plate having a third main surface and a fourth main surface, an adhesive interlayer disposed between the second main surface and the third main surface, a light source which faces the fourth main surface and emits light toward the fourth main surface, and an optical element which is disposed between the fourth main surface and the light source and refracts light emitted from the light source into the fourth main surface.

The invention belongs to the technical field of quantitative remote sensing, and relates to a mid-infrared hyperspectral emission and reflection characteristic integrated inversion method, which comprises the following steps: acquiring mid-infrared hyperspectral satellite remote sensing data, and optimizing sensing entrance pupil radiance data to obtain optimized entrance pupil radiance data; the intermediate infrared hyperspectral satellite remote sensing data comprises sensing entrance pupil radiance data; performing atmospheric correction on the optimized entrance pupil radiance data by using a radiation transfer model to obtain surface brightness temperature and atmospheric downward radiation, and calculating solar irradiance reaching the surface; constructing a mid-infrared hyperspectral earth surface bi-directional reflectivity inversion framework, and performing earth surface bi-directional reflectivity inversion based on the mid-infrared hyperspectral earth surface bi-directional reflectivity inversion framework to obtain earth surface bi-directional reflectivity and earth surface equivalent radiance; constructing a scene self-adaptive framework, and performing inversion based on the scene self-adaptive framework to obtain the surface temperature and the surface emissivity; therefore, accurate separation of surface emission radiation and surface reflection radiation is completed.

To provide a surface emitting module capable of improving the accuracy of the distance between a microlens and the upper surface of a light emitting element and condensing light emitted from the light emitting element with high precision by the microlens.SOLUTION: A through hole is provided in a sealing lid, and a lens holder is provided on the inner wall of the through hole. A microlens is placed in the through hole and fixed to the upper surface of the lens holder by a first joint. The upper surface of a light emitting element is fixed to the lower surface of the lens holder by a second joint. A concave portion is provided in the mounting portion, and the edge thereof and the lower surface of the sealing lid are joined by a third joint. Both the first joint and the second joint are joined by metal joints that do not contain flux. The third joint is joined with solder or adhesive.SELECTED DRAWING: Figure 1

An optical system including a self-emitting display and an optical element is provided. The self-emitting display emits a collimated light from a surface. The optical element is disposed on a moving path of the collimated light. A head-up display is further provided.

The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.

A surface emitter (VCSEL) comprises a stack of semiconductor layers including: a lower Bragg mirror (DBR); a cavity layer; a current-limiting layer; and an upper DBR. The upper DBR comprises multiple pairs of alternating layers with different refractive indices, a subset of which includes alternating layers with decreasing concentration of the at least one metal from the lower layers of the upper DBR, located closer to the cavity layer, to the upper layers of the upper DBR, located farther from the cavity layer. This subset of alternating layers with decreasing concentration of the at least one metal from the lower layers of the upper DBR to the upper layers of the upper DBR exhibits decreasing oxidation depths from one side face of the upper DBR.A method for forming the VCSEL is also disclosed.

An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA / cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.