Surface-emitting laser array, optical scanning device, and image forming device

a laser array and surface-emitting technology, applied in semiconductor lasers, instruments, recording devices, etc., can solve the problems of difficult to carry out uniform mesa etching on the surface of the wafer, difficult to control the depth of etching, and difficult to carry out mesa etching, so as to prevent the exposure prevent the oxidization of the first reflection layer
US20090295902A1Inactive Publication Date: 2009-12-03RICOH KK
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
RICOH KK
Publication Date
2009-12-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.
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Description

TECHNICAL FIELD

[0001] This invention relates to a surface-emitting laser array, an optical scanning device including the surface-emitting laser array, and an image forming device including the surface-emitting laser array.BACKGROUND ART

[0002] In a surface-emitting laser array in which surface-emitting laser elements are integrated, the output of each surface-emitting laser element during operation may decline due to a temperature rise through reception of heat from the surrounding surface-emitting laser elements, and the life of the surface-emitting laser array may be shortened.

[0003] To obviate the problem, it is necessary to improve the heat dissipation characteristic. For example, a material having a high thermal conductivity should be used for a semiconductor Bragg reflector which is located on the side of main heat dissipation. Among the materials which can be used for a semiconductor Bragg reflector of a surface-emitting laser element on a GaAs substrate, AlAs is a suitable one t...

Claims

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