2results about How to "Reduce etch depth" patented technology

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a substrate, and etching a first surface of the substrate to form a plurality of grooves; sequentially forming a lower pole plate, a dielectric layer and an upper pole plate of the trench capacitor in the trench; a first through hole conductive structure is formed above at least part of the grooves, and the first through hole conductive structure is electrically connected to the lower pole plate in the groove below the first through hole conductive structure and is electrically connected with the metal wire located on the second face of the substrate through the lower pole plate; the first through hole conductive structure and the second through hole conductive structure used for being connected with an upper electrode plate of the groove capacitor can be synchronously formed, and plane capacitors can be prepared in parallel while the groove capacitor is formed. According to the invention, through pre-forming and embedding the through hole conductive structure in the groove etching and capacitor preparation stage, the etching depth required by the subsequent top layer through hole can be obviously shortened, the high aspect ratio etching difficulty and the side wall damage risk are reduced, the metal filling is improved, and the interconnection alignment tolerance and yield are improved; and meanwhile, the method is compatible with the existing planar capacitor and rear-end interconnection process, and is beneficial to the reliability and the process stability of the device.

This invention relates to the field of lenses, specifically to a position-modulable liquid crystal lens based on the principle of electric field superposition. The structure of this invention, from top to bottom, consists of an upper substrate, a liquid crystal layer, a dielectric layer, an electrode layer, and a lower substrate. The liquid crystal layer uses polymer-stabilized blue phase liquid crystal, and the electric field within it is a transverse electric field. According to the Kerr effect and related principles, it can achieve a larger refractive index difference. This invention achieves a transverse electric field in the liquid crystal layer through the principle of electric field superposition; that is, the transverse electric fields between pairs of electrodes are superimposed and enhanced, while the longitudinal electric fields are superimposed and canceled out. This allows for the realization of a transverse electric field in a liquid crystal lens with a single-layer planar electrode architecture, reducing the etching depth of the electrode structure. Furthermore, this invention modulates the sinusoidal driving voltage applied to the electrodes, achieving a transverse shift in the lens's refractive index distribution. The minimum precision of this transverse shift is the distance between two adjacent electrodes, thus enabling precise adjustment of the liquid crystal lens's position.