20results about How to "Improve coupling strength" patented technology

The invention provides a bulk acoustic wave reading device of a semiconductor film mechanical oscillator and a preparation method of the bulk acoustic wave reading device, and relates to the technical field of semiconductor devices and preparation of the semiconductor devices. The bulk acoustic wave reading device comprises a bulk acoustic wave piezoelectric structure layer and a semiconductor film structure layer. The bulk acoustic wave piezoelectric structure layer comprises a first substrate layer, a metal growth layer and a piezoelectric film layer; the semiconductor thin film structure layer comprises a second substrate layer, a first semiconductor thin film layer, a second semiconductor thin film layer and a superconducting resonance circuit layer; the middle part of the second substrate layer is of a hollow structure, and the middle part of the first semiconductor film layer comprises a partially suspended semiconductor film layer; the superconductive resonance circuit layer and the piezoelectric film layer form resonance coupling based on the piezoelectric effect to form a supermode, and the superconductive resonance circuit layer is used for exciting the supermode and outputting vibration information of the semiconductor film mechanical oscillator. The bulk acoustic wave reading device provided by the invention has the characteristics of simple structure, simplicity in preparation, high integration level, easiness in integrated processing with other devices and the like.

The invention relates to a multi-absorption-band ultra-wideband common-mode filter based on a mixed resonator structure. The multi-absorption-band ultra-wideband common-mode filter comprises a coupling microstrip line, a dielectric substrate, a main resonator, an auxiliary resonator and a resistor, the filter has an upper surface and a lower surface, and a coupling microstrip line comprises a metal conduction band located on a dielectric substrate and a metal ground layer located below the dielectric substrate; two ends of the coupling microstrip line are respectively connected with the input port and the output port; the main resonator is etched in the middle of the metal ground layer; the auxiliary resonator is etched on the outer side of the main resonator in the metal ground layer; the coupling microstrip line is mutually coupled with the main resonator and the auxiliary resonator to realize mixed resonance; the resistor crosses the gap of the auxiliary resonator at the intersection of the auxiliary resonator and the symmetric line, and the two ends of the resistor are connected with the metal ground layers inside and outside the metal conduction band; according to the invention, the ultra-wideband common-mode suppression bandwidth and a plurality of absorption bands are provided, and the absorption bands dissipate common-mode noise in the form of heat energy, so that the problem of potential common-mode electromagnetic interference in the system is reduced, and normal transmission of differential-mode signals is not damaged at the same time.

The invention relates to a miniaturized broadband power dividing filter applied to an X frequency band. The antenna comprises a metal layer and a dielectric substrate layer, and the metal layer is divided into two layers including an upper metal layer and a lower metal layer; the upper metal layer comprises a section of input feeder line, a first output feeder line, a second output feeder line, an isolation resistor, a first filtering branch knot and a second filtering branch knot, and each of the first filtering branch knot and the second filtering branch knot comprises two same dual composite left and right hand resonance units; the lower metal layer is of a metal grounding plate structure, and two grooves are formed in the metal grounding plate. According to the invention, the sub-wavelength characteristic is fully utilized, the miniaturization of the circuit is realized, the defect of overlarge size of a traditional cascade scheme is effectively overcome, and the circuit is suitable for a high-frequency (x-waveband) application scene. The whole structure is based on the double-sided microwave dielectric plate, has the advantages of simple processing and low cost, and is suitable for large-scale production.

A battery pack includes: a battery cell; a circuit board configured to collect state information about the battery cell; and a connection line configured to transmit the state information about the battery cell to the circuit board and including a link line and a board connection pad, wherein the link line extends from a side of the battery cell toward the circuit board, and the board connection pad extends from a first end portion, to which the link line is connected, and is coupled to the circuit board while facing the circuit board, wherein the board connection pad includes: outer soldering portions formed in an outer region of the board connection pad and concave toward the outside of the board connection pad; a gas discharge hole formed in a closed loop shape in an inner region of the board connection pad; and an inner soldering portion formed along the gas discharge hole. According to the present disclosure, the electrical connection between the connection line and the circuit board may be stably maintained with high reliability for transmitting state information about the battery cell, and manufacturing costs may be reduced by simplifying manufacturing processes.

The present application provides a bulk acoustic wave reading device for a semiconductor thin film mechanical oscillator and a preparation method thereof, and relates to the technical field of semiconductor devices and their preparation. The bulk acoustic wave reading device includes a bulk acoustic wave piezoelectric structure layer and a semiconductor thin film structure layer; the bulk acoustic wave piezoelectric structure layer includes a first substrate layer, a metal growth layer and a piezoelectric thin film layer; the semiconductor thin film structure layer includes: a second substrate layer, a first semiconductor thin film layer, a second semiconductor thin film layer and a superconducting resonant circuit layer; the middle of the second substrate layer is a hollow structure, and the middle of the first semiconductor thin film layer includes a part of a suspended semiconductor thin film layer; the superconducting resonant circuit layer forms a supermode by resonant coupling with the piezoelectric thin film layer based on the piezoelectric effect, and the superconducting resonant circuit layer is used to excite the supermode and output the vibration information of the semiconductor thin film mechanical oscillator. The bulk acoustic wave reading device provided by the present application has the characteristics of simple structure, simple preparation, high integration and easy integration with other devices.

The invention discloses a resonance regulation and control system based on symmetry control. The resonance regulation and control system comprises a low-symmetry metal spiral structure and an excitation microstrip circuit. The low-symmetry metal spiral structure is composed of four metal spiral arms, and the four metal spiral arms have two different lengths. The excitation microstrip circuit sequentially comprises a metal strip, a dielectric substrate layer and a metal ground plane; the resonator introduces an electromagnetic resonance mode excited by a first-order current through the asymmetric design of a low-symmetry metal spiral structure, and realizes the regulation and control of resonance characteristics.

The present invention relates to a motor comprising: a stator; and a rotor rotating about the stator. The stator has: a stator core having a plurality of split cores respectively having a plurality of teeth and slots and coupled into a ring shape; and a stator coil inserted in the slots. The plurality of split cores has: a plurality of yoke parts positioned adjacent to each other; a plurality of teeth parts respectively protruding from the plurality of yoke parts in the radial direction; a cutting part cut in the radial direction between the yoke parts which are adjacent to each other; and a connection part for connecting the yoke parts which are adjacent to each other so as to be able to relatively rotate. Therefore, the size of scraps can be reduced when manufacturing the stator core.

The application discloses a 750-850nm waveband photonic crystal surface emitting laser and a preparation method, and belongs to the field of semiconductor lasers. The application is divided into surface etching and buried photonic crystal layer structures, uses n-GaAs as a substrate, combines surface etching or buried photonic crystal structures, uses amorphous silicon, titanium oxide, GaP or AlGaAs as main materials of a resonant cavity, utilizes large-area in-plane resonance and high coupling with a quantum well active layer, realizes low-loss resonance and optical gain, and realizes a 750-850nm waveband semiconductor laser with high light beam quality, high power and surface emission.

The invention provides a method for preparing a photonic crystal fiber with sensing and filtering functions. The method comprises the specific steps that a first layer of air holes are formed in the circle center of quartz; by taking the first layer of air holes as the center, two second type of air holes and three third type of air holes are formed in the periphery of the first layer of air holes along a regular hexagon; by taking the first layer of air holes as the center, two first type of air holes and nine third type of air holes are formed in the periphery of the first layer of air holes along a regular hexagon; thirteen third-type air holes are formed in the periphery of the first-layer air holes in a regular hexagon mode with the first-layer air holes as the center; and preparing a preform according to the arranged cladding, melting and drawing wires, and depositing gold on a polished plane to obtain the photonic crystal fiber, and immersing the photonic crystal fiber in a liquid to be detected when in use. According to the invention, integration of the optical fiber sensor and the filter is realized, high-sensitivity sensing is realized in the X polarization direction, and polarization filtering with adjustable bandwidth and high extinction ratio is realized in the Y polarization direction.

The embodiment of the invention discloses a terminal connector and an electric driving assembly, a plurality of conductive pieces and a filtering part of a terminal strip are arranged in a shell, and a first connecting end and a second connecting end are respectively arranged at two ends of an extension body so as to conduct current. Therefore, the plurality of first sections are arranged on the extension body, and the plurality of first sections are arranged at intervals to form the middle assembly arranged in the magnetic ring. Therefore, the conductive member can pass through the magnetic ring for multiple times by using the intermediate assembly, so that the coupling strength of the terminal strip and the magnetic ring is increased, and the filtering effect of the magnetic ring on common-mode noise is improved. On the other hand, a capacitor is prevented from being arranged on the terminal connector. Therefore, the structure of the terminal connector is simplified, and the size of the terminal connector is smaller.

The application relates to a single-molecule transistor structure coupled with a THz wave band and a preparation method thereof. The single-molecule transistor structure comprises a silicon substrate, a gate, a gate dielectric layer, a source and a drain matched with the gate control, a split ring resonator structure, a peripheral electrode and a single-molecule active region located at a nanometer / sub-nanometer gap of the source and the drain. Through the structure and the method, a significant terahertz local field enhancement can be obtained in the gap region where the molecules are located while the transistor characteristics and the device stability are ensured, and an implementable process path is provided for the construction and application research of the single-molecule coupling device in the terahertz wave band.

This invention provides a machine learning-based method and system for predicting changes in karst carbon sinks. It acquires environmental baseline data and measured carbon sink data for karst areas, and constructs a dynamic coupling body for karst carbon sinks, including elements such as real-time correlation links. A pre-trained carbon sink evolution prediction model is initiated to perform bidirectional interactive modeling with this coupling body. The carbon sink evolution prediction model generates feature iteration instructions to drive feature updates in the coupling body, and the coupling body provides feedback on feature change signals to correct model parameters, obtaining intermediate results from multiple rounds of interactive modeling. Based on these intermediate results, operations such as correlation link strengthening are performed on the coupling body to obtain the evolved coupling body. The carbon sink evolution prediction model is then used to perform cross-dimensional feature decoding and correlation trend inference on the evolved coupling body to generate karst carbon sink change prediction results. This invention considers the relationship between environmental factors and carbon sinks, improving prediction accuracy and adaptability through dynamic interaction and optimization.

The invention provides a C4 asymmetric topological photonic crystal angular state coupling-based Fano filter, which is composed of a topological boundary state optical waveguide and one or more topological angular state resonant cavity structures, and Fano resonance is realized between the topological boundary state optical waveguide and the topological angular state resonant cavity structures through a coupling interface; the topological boundary state optical waveguide and the topological angular state resonant cavity are both constructed based on C4 asymmetric topological photonic crystals. Through a plurality of topological angular state resonant cavities and adjustment of the sizes of dielectric cylinders at the corners of the resonant cavities, the local field intensity can be enhanced, zero-dimensional optical localization is realized, and selective optical filtering of two or more specific frequencies is realized. The filter provided by the invention can realize an efficient single-frequency or multi-frequency-band optical filtering function, and provides a new scheme for the application of a topological photonic device in optical communication.

The application provides a broadband filtering device and a multi-system access platform, and relates to the technical field of multi-system access platforms, wherein the broadband filtering device comprises a dielectric substrate, a resonator arranged on the surface of the dielectric substrate, and a plurality of input units arranged around the resonator; each input unit comprises a first coupling line, a second coupling line and an input piece arranged on the surface of the dielectric substrate; the first coupling line and the second coupling line are connected with the input piece; the first coupling line and the second coupling line are coupled with the resonator; and the input piece is used for inputting an electric signal. The broadband filtering device and the multi-system access platform provided by the application solve the problem of narrow bandwidth of the filtering device in the prior art.

The present invention discloses an input-output coupling structure of an ultra-wide passband combiner, which belongs to the field of combiners. The input-output coupling structure of an ultra-wide passband combiner includes a main body, a cavity is provided in the main body, a combline resonator is provided in the cavity, and the combline resonator is fixedly connected in the cavity by a resonator fixing screw; an L-end low-pass is also connected in the cavity, a COM input-end coupling block corresponding to the COM-end input connector is connected in the cavity, and the COM input-end coupling block is welded and connected to the L-end low-pass; an H-port input copper rod and an L-port input copper rod are respectively connected in the H-port output connector and the L-port output connector, and the L-port input copper rod is welded and connected to the L-end low-pass, and an H-port coupling resonant column is also provided in the cavity; the present invention solves the drawback that it is difficult to achieve strong coupling in the design of broadband combiners, and increases the characteristics of stability, consistency, reliability, operability, low cost, etc.

The invention provides a Raman inactive interlayer breathing mode testing method of a semiconductor wafer, and relates to the technical field of spectrums.The method comprises the steps that a transition metal chalcogenide is adopted to prepare a multi-layer two-dimensional semiconductor wafer sample on a composite silicon substrate; finding a sample to be tested on the surface of the composite silicon substrate by using an optical microscope, wherein a tested area forms a phonon-optical cavity; utilizing a low-wave-number microscopic Raman spectrometer to test a low-wave-number microscopic Raman spectrum of the sample under the configuration of parallel polarization and cross polarization; and subtracting the low-wave-number microscopic Raman spectrum under the cross polarization configuration from the low-wave-number microscopic Raman spectrum under the parallel polarization configuration to obtain a breathing mode Raman spectrum of the sample, thereby determining the Raman inactive interlayer breathing mode of the multilayer two-dimensional semiconductor sheet sample. The Raman inactive interlayer breathing mode of the multi-layer two-dimensional semiconductor sheet sample can be detected through the strong coupling effect of the phonon cavity and the optical cavity of the multi-layer two-dimensional semiconductor sheet sample on the composite silicon substrate.

The invention discloses a balanced broadband substrate integrated coaxial line filter switch, which is characterized in that a broadside coupling structure consisting of a top coplanar waveguide loaded by a PIN tube and a substrate integrated coaxial line is arranged between a pair of substrate integrated coaxial line feed structures with mode impedance identification; the balanced broadband substrate integrated coaxial line filter switch is realized by utilizing the broadside coupling effect, the mode impedance of the feed structure and the short-circuit and open-circuit effects of the PIN tube, has the advantages of switchable differential-mode filter passband, common-mode rejection and broadband work, and can consider small size, simple structure and planar integration.

The invention discloses a compact broadband balance band-pass filter based on strip lines, and belongs to the technical field of microwave passive devices. A first two-gap dielectric substrate is provided with a first differential input feeder line and a second differential input feeder line; the first differential input feeder line comprises a first quarter-wavelength coupling connecting line and a first quarter-wavelength open-circuit line; the second differential input feeder line comprises a first quarter-wavelength delay line and a first quarter-wavelength coupling open-circuit line; the second four-gap dielectric substrate is provided with a first quarter-wavelength short-circuit resonator, and the third four-gap dielectric substrate is provided with a second quarter-wavelength short-circuit resonator; the second two-gap dielectric substrate is provided with a first differential output feeder line and a second differential output feeder line. The filter is simple in structure, large in working bandwidth, good in differential mode port matching performance, high in common mode rejection level in a broadband range, compact in size and low in manufacturing cost.

The embodiment of the present invention discloses an antenna assembly, which uses a common grounding portion to provide grounding for a first radiating portion and a second radiating portion, and arranges the second radiator and the first grounding pattern on the same side of a substrate. Thus, on the one hand, the second radiator and the first grounding pattern are arranged at intervals to form a first coupling gap, and the first feeding branch node and the second feeding branch node are arranged in the first coupling gap. Thereby, the coupling strength between the first grounding pattern and the main radiating unit, the diversity radiating unit and the second radiator is improved. On the other hand, the distances between the feeding point and the first side edge and the second side edge are configured to be different, and the first side edge and the second side edge have an angle. This causes a potential difference to be generated in the guided electromagnetic waves on the first side edge and the second side edge, and at the same time, after the two are superimposed on each other, they are coupled to the second radiator to generate a circularly polarized electromagnetic signal. The communication requirements between the antenna assembly and the satellite are met, so that the first radiating portion can be used to position the antenna assembly.

Disclosed is an electrode assembly, in which a first electrode, a second electrode, and a separator interposed therebetween are wound based on a winding axis to define a core and an outer circumference. The first electrode includes an active material portion coated with an active material layer and a first non-coated portion not coated with the active material layer along a winding direction, and at least a part of the first non-coated portion is used as an electrode tab in itself. The first non-coated portion includes a plurality of impregnation slits formed along a circumferential direction of the electrode assembly. Longitudinal extension lines of impregnation slits adjacent to each other along the circumferential direction do not overlap each other.