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A 750-850 nm band photonic crystal surface emitting laser and a preparation method thereof

PendingCN122178188AExcellent single model characteristicsIncrease transmit powerLaser detailsSemiconductor lasersPhotonic crystal structureGain
The application discloses a 750-850nm waveband photonic crystal surface emitting laser and a preparation method, and belongs to the field of semiconductor lasers. The application is divided into surface etching and buried photonic crystal layer structures, uses n-GaAs as a substrate, combines surface etching or buried photonic crystal structures, uses amorphous silicon, titanium oxide, GaP or AlGaAs as main materials of a resonant cavity, utilizes large-area in-plane resonance and high coupling with a quantum well active layer, realizes low-loss resonance and optical gain, and realizes a 750-850nm waveband semiconductor laser with high light beam quality, high power and surface emission.
Owner:NANJING UNIV OF POSTS & TELECOMM