Photonic crystal nano cavity quantum ring single-photon emission device and preparation method thereof
A single-photon emission and photonic crystal technology, applied in the field of quantum information, can solve the problems of difficult to achieve high-performance single-photon emission, unable to cover the 850nm band, small hole energy level separation, etc. Small size and high quantum efficiency
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Embodiment 1
[0038] Taking GaAs / Al(Ga)As quantum ring as an example, the preparation method of the quantum ring is self-organized growth. The specific preparation method of the photonic crystal nanocavity quantum ring single-photon emitting device of the present invention is as follows:
[0039] Step 1: growing 300nm Si-doped GaAs on the n-type highly doped GaAs substrate 7 as the buffer layer 6 with a doping concentration of 2×10 18 cm -3 ; Continue to grow the N-type Bragg reflector 5 on the buffer layer 6, specifically 30 pairs of Al 0.9 Ga 0.1 As and Al 0.1 Ga 0.9 The As material is grown alternately, so that the reflectivity of the N-type Bragg mirror 5 is >95%, and the Si doping concentration is 1×10 18 cm -3 , the thickness of the N-type Bragg reflector 5 is determined according to the condition that the optical thickness of a single layer is 1 / 4 wavelength, that is, nd=1 / 4λ, and the wavelength is the light emitting wavelength of the quantum ring 9;
[0040] Step 2: growing Al...
Embodiment 2
[0048] Taking GaAs / Al(Ga)As quantum rings as an example, the preparation method of the quantum rings can also be prepared by dry etching, and correspondingly, the third step in the method of the present invention is changed to: grow 10nm GaAs, and form a diameter of 30nm by electron beam exposure. A ring with an inner diameter of 10nm, wet etching, a depth of about 10nm, degumming, cleaning, and epitaxial growth of 1 / 4 wavelength Al 0.3 Ga 0.7 As, no doping.
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