The invention discloses a
gallium nitride groove type
MOSFET device and a preparation method thereof, and belongs to the field of
semiconductor devices. The device comprises a substrate, an epitaxial structure formed on a first surface of the substrate, a
gate dielectric layer formed on the epitaxial structure, a source
electrode, a gate
electrode and a drain
electrode, the epitaxial structure comprises an n-GaN drift layer, a C-doped high-resistance GaN layer and an n +-GaN layer which are sequentially formed on the first surface of the substrate, the C-doped high-resistance GaN layer is located between the n-GaN drift layer and the n +-GaN layer, and the n +-GaN layer is located between the
gate dielectric layer and the n +-GaN layer. And a high-resistance current
blocking layer. The preparation method comprises the following steps: sequentially growing an n-GaN drift layer, a C-doped high-resistance GaN layer and an n +-GaN layer on a first surface of a substrate to form an epitaxial structure; forming a
gate dielectric layer on the epitaxial structure; and forming a grid electrode, a source electrode and a drain electrode. Compared with the prior art, the C-doped high-resistance GaN layer is adopted to replace the Mg-doped p-GaN layer, preparation and activation of the p-GaN layer in a traditional method are avoided, and the vertical
voltage endurance capability and the leakage current suppression capability of the device are effectively improved.