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37results about How to "Restrict form" patented technology

Inter-vehicle communication apparatus and method with restrictions on size of network

When a network is formed among vehicles with the use of inter-vehicle communication units, a network-forming-request-source vehicle sends its position serving as a reference position, its moving direction, and requested information to surrounding vehicles by the use of a free ID. Among the surrounding vehicles, vehicles which are to subscribe to the network receive the position, the moving direction, and the requested information, determine where the vehicles are positioned among positions specified in advance relative to the reference position, and respond at a timing corresponding to their positions by the use of free IDs. The network-forming-request-source vehicle receives the responses, stops receiving responses when the number of responded vehicles reaches an appropriate number of vehicles, and sends its genuine ID and a vehicle communication order. Then, a restriction, such as a restriction based on the number of times relay processes are allowed, a restriction based on a predetermined-distance area from the center of balance or the center, or a restriction based on a communication period equal to a predetermined time or shorter from when the network is formed, all of which correspond to the type of network, is applied to form an appropriate-area network.
Owner:ALPINE ELECTRONICS INC

Inter-vehicle communication apparatus

InactiveUS20050003844A1Easily apply appropriate restrictionPrevent PN codeArrangements for variable traffic instructionsAssess restrictionArea networkTrunking
When a network is formed among vehicles with the use of inter-vehicle communication units, a network-forming-request-source vehicle sends its position serving as a reference position, its moving direction, and requested information to surrounding vehicles by the use of a free ID. Among the surrounding vehicles, vehicles which are to subscribe to the network receive the position, the moving direction, and the requested information, determine where the vehicles are positioned among positions specified in advance relative to the reference position, and respond at a timing corresponding to their positions by the use of free IDs. The network-forming-request-source vehicle receives the responses, stops receiving responses when the number of responded vehicles reaches an appropriate number of vehicles, and sends its genuine ID and a vehicle communication order. Then, a restriction, such as a restriction based on the number of times relay processes are allowed, a restriction based on a predetermined-distance area from the center of balance or the center, or a restriction based on a communication period equal to a predetermined time or shorter from when the network is formed, all of which correspond to the type of network, is applied to form an appropriate-area network.
Owner:ALPINE ELECTRONICS INC

Apparatus for purifying metallurgical silicon for solar cells

A system for forming high quality silicon material, e.g., polysilicon. In a specific embodiment, the melted material comprises a silicon material and an impurity, e.g., phosphorous species. The system includes a crucible having an interior region. In a specific embodiment, the crucible is made of a suitable material such as a quartz material or others. The quartz material is capable of withstanding a temperature of at least 1400 Degrees Celsius for processing silicon. In a specific embodiment, the crucible is configured in an upright position and has an open region to expose a melted material. In a specific embodiment, the present system has an energy source. Such energy source may be an arc heater or other suitable heating device, including multiple heating devices, which may be the same or different. The arc heater is configured above the open region and spaced by a gap between the exposed melted material and a muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. In a specific embodiment, the system produces a melted material comprising a resulting phosphorous species of 0.1 ppm and less, which is purified silicon.
Owner:HOSHINO MASAHIRO +1

Method for purifying metallurgical silicon for solar cells

The present invention provides a method for forming high quality silicon material, e.g., polysilicon. The method includes transferring a raw silicon material in a crucible having an interior region. The crucible is made of a quartz or other suitable material, which is capable of withstanding a temperature of at least 1400 Degrees Celsius. The method includes subjecting the raw silicon material in the crucible to thermal energy to cause the raw silicon material to be melted into a liquid state to form a melted material at a temperature of less than about 1400 Degrees Celsius. Preferably, the melted material has an exposed region bounded by the interior region of the crucible. The method also includes subjecting an exposed inner region of the melted material to an energy source comprising an arc heater configured above the exposed region and spaced by a gap between the exposed region and a muzzle region of the arc heater to cause formation of determined temperature profile within a vicinity of an inner region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. Preferably, the method removes one or more impurities from the melted material to form a higher purity silicon material in the crucible.
Owner:HOSHINO MASAHIRO +1

Method for purifying metallurgical silicon for solar cells

The present invention provides a method for forming high quality silicon material, e.g., polysilicon. The method includes transferring a raw silicon material in a crucible having an interior region. The crucible is made of a quartz or other suitable material, which is capable of withstanding a temperature of at least 1400 Degrees Celsius. The method includes subjecting the raw silicon material in the crucible to thermal energy to cause the raw silicon material to be melted into a liquid state to form a melted material at a temperature of less than about 1400 Degrees Celsius. Preferably, the melted material has an exposed region bounded by the interior region of the crucible. The method also includes subjecting an exposed inner region of the melted material to an energy source comprising an arc heater configured above the exposed region and spaced by a gap between the exposed region and a muzzle region of the arc heater to cause formation of determined temperature profile within a vicinity of an inner region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. Preferably, the method removes one or more impurities from the melted material to form a higher purity silicon material in the crucible.
Owner:HOSHINO MASAHIRO +1
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