6results about How to "Improve Sensing Performance" patented technology

This invention discloses a method for preparing a self-healing hydrogel with both sensing and antibacterial properties. The invention uses a hydrogel prepared from acrylamide (AM) and 2-(methacryloyloxy)ethyl dimethyl-(3-sulfopropyl)ammonium hydroxide (SBMA) and cellulose nanofibers (CNF) as a matrix, silver-coated polydopamine nanoparticles (Ag@PDA NPs) as antibacterial and conductive agents, and 2-hydroxy-4'-(2-hydroxyethoxy)-2-methylphenylacetone (I2959) and polyethylene glycol diacrylate (PEGDA) as photoinitiators and crosslinking agents. A multifunctional hydrogel with multiple dynamic reversible bonds is prepared by ultraviolet light-initiated self-polymerization. By constructing various dynamic reversible interactions, including covalent and non-covalent bonds and interionic interactions, a self-healing Ag@PDA NPs / AM / SBMA / CNF hydrogel was obtained. Ag and DA were introduced to prepare Ag@PDA with antibacterial, adhesive, and electronic conductivity properties, while zwitterionic SBMA was introduced to provide ionic conductivity. The synergistic effect of these two compounds endows the hydrogel with electrical conductivity. The hydrogel dressing prepared by this method can achieve rapid sterilization while possessing excellent biocompatibility, high adhesion, high conductivity sensing ability, and environmental adaptability.

The application discloses a kind of Ni doped nano SnO2 semiconductor HCHO sensing materials and preparation method and application thereof, and the preparation method of sensing material includes the following steps: step one, Sn salt-Ni salt solution is configured;Step two, using supercritical hydrothermal synthesis (CSHS) reaction device, Sn salt-Ni salt solution is contacted with supercritical water and crystallization is generated nano doped oxide, and reaction liquid is discharged and collected after cooling, and the crystalline material is separated, i.e. the Ni doped nano SnO2 semiconductor HCHO sensing material of the application.The Ni doped nano SnO2 semiconductor HCHO sensing material prepared by the method of the application has good structural consistency and excellent sensing performance.

The present application relates to a kind of preparation methods of coating material, more particularly to a kind of preparation method of porous polyethyleneimine-silver nanocluster / chitosan / silica coating material.The purpose of the present application is to overcome the problem that the sensing of existing metal nanocluster composite nanoparticles after silica coating is poor, and the application in fluorescence sensing is limited.The present application provides a kind of preparation method of porous polyethyleneimine-silver nanocluster / chitosan / silica coating material, which includes etching the prepared porous polyethyleneimine-silver nanocluster / chitosan / silica coated nanoparticles, making it loose and porous, and enhancing its sensing ability, thereby solving the problem that the sensing of existing metal nanocluster composite nanoparticles after silica coating is poor, and the application in fluorescence sensing is limited.

This invention belongs to the field of electronic component technology, and discloses a SnTe material for a nitrogen dioxide gas sensor, its preparation process, and its application. The SnTe material is synthesized via a solvothermal method. The nitrogen dioxide gas sensor mainly consists of a gas-sensitive material and gold interdigitated electrodes. The gas-sensitive material is coated on the surface of the gold interdigitated electrodes with a coating thickness of approximately 15mm to 75mm. The gas-sensitive material is SnTe. This invention provides a simple, low-cost, safe, and controllable TMDC nanomaterial preparation scheme. Using ethanolamine as a solvent and coordinating agent, and potassium hydroxide aqueous solution as a tellurium source activator, this invention synthesizes SnTe nanomaterials in one step via a solvothermal method. The SnTe nanomaterials prepared by this invention achieve a small nanoscale size. A large number of small-sized nanomaterials can effectively increase the sufficient contact between the material and gas molecules, improving the residence rate of gas molecules on the nanomaterial surface.

The application discloses a quantum sensor chip packaging structure capable of realizing wafer-level planar co-packaging, which comprises a microfabricated atomic cell, a light source chip assembly and a light detection chip assembly, the microfabricated atomic cell is integrated with a reflecting element, the reflecting element is used for adjusting the optical path of the light beam entering the microfabricated atomic cell, the microfabricated atomic cell, the light source chip assembly and the light detection chip assembly are supported on a packaging substrate through a micro-bump assembly and are directly electrically interconnected with the packaging substrate through the micro-bump assembly, the micro-bump assembly comprises a plurality of micro-bumps, the distribution mode of the micro-bumps is for the purpose of realizing the supporting function and the electrical interconnection, the size of the micro-bump supporting the microfabricated atomic cell, the light source chip assembly and / or the light detection chip assembly is adjustable, the optical path of the microfabricated atomic cell is regulated by adopting the combination of micro-bumps with different sizes, and the planar co-packaging of the microfabricated atomic cell and other key quantum sensor components can be realized.

This invention discloses a walnut-shaped In2O3 / CuO material, its preparation method, and its applications, comprising the following steps: Step 1: solvothermal synthesis of a bimetallic coordination polymer precursor; Step 2: controllable pyrolysis of the precursor to convert it into a target oxide composite material; This invention addresses the difficulty of synergistic regulation of heterostructures and oxygen vacancies in existing methods by proposing a one-step solvothermal-programmed pyrolysis method to prepare a walnut-shaped In2O3 / CuO heterojunction composite material with a three-dimensional hierarchical porous structure and controllable oxygen vacancies, thereby achieving simultaneous optimization of material structure, composition, and defects to improve low-temperature Cl2 sensing performance.