552 results about "Tunneling field effect transistor" patented technology

The present invention relates to a heterojunction tunneling effect transistor (TFET), which comprises spaced apart source and drain regions with a channel region located therebetween and a gate stack located over the channel region. The drain region comprises a first semiconductor material and is doped with a first dopant species of a first conductivity type. The source region comprises a second, different semiconductor material and is doped with a second dopant species of a second, different conductivity type. The gate stack comprises at least a gate dielectric and a gate conductor. When the heterojunction TFET is an n-channel TFET, the drain region comprises n-doped silicon, while the source region comprises p-doped silicon germanium. When the heterojunction TFET is a p-channel TFET, the drain region comprises p-doped silicon, while the source region comprises n-doped silicon carbide.

A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized.

The present invention provides a magnetic memory device. An embodiment of the present invention includes a magnetic memory cell that is switchable between two states offering electrical resistance which are detectible by a sense current though the magnetic memory cell. The device includes a field effect transistor (FET) arrangement which has a source and a drain. The source and the drain are connected by a connecting element which projects from a portion of the device and which has an electrical conductivity that varies in response to a gate voltage applied to the connecting element. The magnetic memory cell is in electrical communication with the connecting element so that at least a portion of the sense current is in use associated with a corresponding gate voltage and the FET arrangement amplifies at least a portion of the sense current.

A composite field effect transistor, in accordance with one embodiment, includes a zener diode, a junction field effect transistor and a metal-oxide-semiconductor field effect transistor. A gate of the junction field effect transistor is coupled to an anode of the zener diode. A cathode of the zener diode is coupled to a gate of the metal-oxide-semiconductor field effect transistor. A drain of the metal-oxide-semiconductor field effect transistor is coupled to a source of the junction field effect transistor.

A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

A transistor biasing circuit is shown that utilizes a negative feedback loop control circuit to set the gate bias voltage in the output transistors of a power amplifier. This control circuit has a current sensor in series with the drain of the transistor, the current sensor output in turn feeding a dc signal into a dc amplifier, and the output of the dc amplifier driving a gate bias integrator which forms a dc control loop for maintaining the bias point. The output transistor is protected from excessive temperature and/or excessive power dissipation.

A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer.

Disclosed are embodiments of an improved multi-gated field effect transistor (MUGFET) structure and method of forming the MUGFET structure so that it exhibits a more tailored drive current. Specifically, the MUGFET incorporates multiple semiconductor fins in order to increase effective channel width of the device and, thereby, to increase the drive current of the device. Additionally, the MUGFET incorporates a gate structure having different sections with different physical dimensions relative to the semiconductor fins in order to more finely tune device drive current (i.e., to achieve a specific drive current). Optionally, the MUGFET also incorporates semiconductor fins with differing widths in order to minimize leakage current caused by increases in drive current.

A circuit includes a first field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal; and a second field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal. The second field effect transistor and the first field effect transistor are of the same type, i.e., both n-channel transistors or both p-channel transistors. The second drain-source terminal of the first field effect transistor is coupled to the first drain-source terminal of the second field effect transistor; and the gate of the second field effect transistor is coupled to the first drain-source terminal of the second field effect transistor. The resulting three-terminal device can be substituted for a single field effect transistor that would otherwise suffer breakdown under proposed operating conditions.

An ESD protection device. The ESD protection device is incorporated with a gap structure in a laterally diffused metal oxide semiconductor (LDMOS) field effect transistor, isolating a doped region and a field oxide region. When a parasitical semiconductor controlled rectifier (SCR) of LDMOS is turned off, ESD current is discharged distributively through several discharge paths, avoiding ESD current focus in a signal narrow discharge path and the danger therefrom.

The present invention discloses a gas sensor made of field effect transistor based on ZnO nanowires (ZnO-FET) which operates according to the principle of metal-oxide-semiconductor field effect transistor (MOSFET) and has a charge carrier channel made of ZnO nanowires between source and drain. The gas sensor device disclosed in the present invention has three electrodes-gate, source and drain, so that it is different from the known gas sensor device which has only two electrodes-cathode and anode. The ZnO nanowires as charge channel in the gas sensor device of the present invention is an n-type semiconductor with high specific surface area, and its electric resistance can be controlled by the gate bias, so that the capability of the present device for sensing gas can be largely promoted.

A group III nitride-based transistor capable of achieving terahertz-range cutoff and maximum frequencies of operation at relatively high drain voltages is provided. In an embodiment, two additional independently biased electrodes are used to control the electric field and space-charge close to the gate edges.

Compound tunneling field effect transistors integrated on a silicon substrate are provided with increased tunneling efficiency and an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (eV) narrower than that of silicon to increase a driving current (ON current) by forming a channel region with a material having almost no difference in lattice constant from a source region and having a high electron mobility at least 5 times higher than silicon. ON/OFF current ratio simultaneously is increased by forming a drain region with a material having a bandgap at least as wide as a channel region material to restrain OFF current. Tunneling field effect transistors having various threshold voltages according to circuit designs are formed easily by adding a specific material with an electron affinity less than a source region material when forming a channel region.

A silicon on insulator (SOI) CMOS circuit, macro and integrated circuit (IC) chip. The chip or macro may include be an SRAM in partially depleted (PD) SOI CMOS. Most field effect transistors (FETs) do not have body contacts. FETs otherwise exhibiting a sensitivity to history effects have body contacts. The body contact for each such FET is connected to at least one other body contact. A back bias voltage may be provided to selected FETs.

The invention provides a grid controlled Schottky junction tunneling field effect transistor, which comprises a substrate, a channel layer, a metal source region, a second semiconductor material layer, a drain region, step grid stacks and one-layer or multi-layer side walls, wherein the channel layer is formed on the substrate and made of a first semiconductor material, and the channel layer is provided with a channel region; the metal source region is formed in the channel layer and adjacent to the channel region, wherein the metal source region and the channel region form a Schottky junction; the second semiconductor material layer is formed on the first region of the channel layer; the drain region is formed in the second region of the second semiconductor material layer; the step gridstacks are formed on the third region of the channel layer and on the fourth region of the second semiconductor material layer; and the one-layer or multi-layer side walls are formed on two sides of the step grid stacks. The semiconductor structure provided by the invention has better switching property and high frequency property.

Disclosed are integrated circuit (IC) structure embodiments that incorporate stacked pair(s) of field effect transistors (FETs) (e.g., gate-all-around FETs), including a lower FET and an upper FET on the lower FET, and various metal components that enable power and/or signal connections to the source/drain regions of those FETs. The metal components can include first buried wire(s) within an isolation region in a level below the stacked pair and a first embedded contact that electrically connects a source/drain region of the lower FET to a first buried wire. Optionally, the metal components can also include second buried wire(s) in dielectric material at the same level as the upper FET and a second embedded contact that electrically connects a source/drain region of the upper FET to a second buried wire. Also disclosed are embodiments of a method of forming such IC structure embodiments.

A two-dimensional (2D) heterojunction interlayer tunneling field effect transistor (Thin-TFET) allows for particle tunneling in a vertical stack comprising monolayers of two-dimensional semiconductors separated by an interlayer. In some examples, the two 2D materials may be misaligned so as to influence the magnitude of the tunneling current, but have a modest impact on gate voltage dependence. The Thin-TFET can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. These qualities in turn make the Thin-TFET an ideal low voltage, low energy solid state electronic switch.