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298 results about "Concentration effect" patented technology

In the study of inhaled anesthetics, the concentration effect is the increase in the rate that the Fa(alveolar concentration)/Fi(inspired concentration) ratio rises as the alveolar concentration of that gas is increased. In simple terms, the higher the concentration of gas administered, the faster the alveolar concentration of that gas approaches the inspired concentration. In modern practice is only relevant for nitrous oxide since other inhaled anesthetics are delivered at much lower concentrations due to their higher potency.

Vibrio qinghaiensis Q67 based long-term microplate toxicity analyzing method of environmental pollutant

The invention discloses a vibrio qinghaiensis Q67 based long-term microplate toxicity analyzing method of environmental pollutants. The long-term microplate toxicity analyzing method is established by using the vibrio qinghaiensis Q67 as a tested organism and introducing time factors into the toxicity concentration-effect relationship of the traditional compound on the basis of a microplate toxicity analyzing method. The vibrio qinghaiensis Q67 based long-term microplate toxicity analyzing method of the environmental pollutants is characterized by adopting a specific microplate design and sampling scheme and a microplate culture medium suitable for the growth of the vibrio qinghaiensis Q67, measuring the long-term toxicity effect of the environmental pollutants on the vibrio qinghaiensis Q67 and repeatedly measures the toxicity of the same pollutant through multiple plates to ensure the statistical significance of an experimental result. By measuring the long-term toxicity of a part of the environmental pollutants on the vibrio qinghaiensis Q67, compared with short-term toxicity, the long-term toxicity of the tested environmental pollutants is discovered to be obviously higher than the short-term toxicity of the tested environmental pollutants, wherein the difference of the long-term toxicity and the short-term toxicity of antibiotics is most significant. The invention can actually reflect the toxicity of a site compound having specific action on compounds and more reasonably evaluate the toxicity of the pollutants.
Owner:TONGJI UNIV

SiC junction barrier Schottky diode and manufacturing method thereof

ActiveCN103346169AIncrease BFOM valueReduce the effect of fringe electric field concentrationSemiconductor/solid-state device manufacturingSemiconductor devicesOhmic contactOptoelectronics
The invention relates to a SiC junction barrier Schottky diode and a manufacturing method of the SiC junction barrier Schottky diode. The SiC junction barrier Schottky diode comprises a substrate of a first conductive type, an epitaxial layer of the first conductive type, a Schottky metal contact, a heavily doped region of a second conductive type, a light doped region of the second conductive type, a light doped trap of the second conductive type and an ohmic contact, wherein the epitaxial layer of the first conductive type is formed on the substrate, the Schottky metal contact is formed on the epitaxial layer, the heavily doped region of the second conductive type is formed below the Schottky metal contact, the light doped region of the second conductive type is formed below the heavily doped region, the light doped trap of the second conductive type is formed below the light doped region, the width of the light doped trap is smaller than that of each light doped region, and the ohmic contact is formed on the reverse side of the substrate. The SiC junction barrier Schottky diode can obviously reduce the electric field concentration effect in the corner of a PN junction, and further improves the reverse breakdown voltage of a device and a quality factor (BFOM) value of Baliga.
Owner:TSINGHUA UNIV

Trench gate charge storage-type IGBT and manufacturing method thereof

The invention discloses a trench gate charge storage-type IGBT and a manufacturing method thereof, which belong to the technical field of power semiconductor devices. Through reasonably introducing asplit trench gate structure and an air floating P-type region, in a condition of not influencing the threshold voltage of the IGBT and conduction, Miller capacitance is reduced, and bad influences brought by Miller effects are improved; the overall gate capacitance is reduced, the device switching speed is improved, the switching losses of the device are reduced, and the compromise between forwardconduction voltage drop and turn-off losses of the traditional CSTBT structure is improved; current and voltage oscillations and EMI problems in the device dynamic starting process are avoided, and the device reliability is improved; electric field concentration effects at the bottom part of the trench are improved, and the breakdown voltage of the device is improved; carrier enhancement effectsat an emitter end of the device are improved, the carrier concentration distribution in a drift region is improved, and the compromise between forward condition voltage drop and turn-off losses is further improved; and besides, the manufacturing method disclosed in the invention has the advantages of low realization difficulty, high product rate and low cost.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Trench-gate charge storage type IGBT and manufacturing method therefor

The invention discloses a trench-gate charge storage type IGBT and a manufacturing method therefor, and belongs to the technical field of semiconductor power devices. A trench-gate emitter structure connected with a P-type volume region is introduced to an N-type drift region at one side of a trench gate in a conventional CSTBT device, thereby enabling the gate-collector capacitance into gate-emitter capacitance, and improving the adverse effect of Miller capacitance. A thick dielectric layer of the trench-gate emitter structure avoids an electric field concentration effect at the bottom of atrench, and improves the breakdown voltage of a device. The depth of a gate electrode is enabled to be less than the junction depth of an N-type charge storage layer, thereby reducing the overall gatecapacitance under the condition that the connection of an IGBT is not affected, improving the switching speed of the device, reducing the switching loss of the device, and improving the compromise characteristics between a positive conduction voltage and the switching-off loss. According to the invention, the existing of the P-type volume region can reduce the extraction area of a hole, and improves the carrier concentration distribution of the whole N-type drift region. Moreover, the noise impact is reduced, and the EMI effect is avoided.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

HEMT device with junction type semiconductor layer

ActiveCN105097911AImprove the electric field concentration effectImprove off-state breakdown voltageSemiconductor devicesP type dopingSemiconductor
The invention belongs to the technical field of a semiconductor and specifically relates to an HEMT device with a junction type semiconductor layer. The device is mainly constructed in such a way that the junction type semiconductor layer is grown on the upper surface of a barrier layer between a grid and a drain and the junction type semiconductor layer and the barrier layer form two-dimensional cavity gas (2DHG). On one hand, grid metal and the junction type semiconductor layer form a rectification structure so that leakage currents of grid-2DHG-2DEG caused when the grid is positively pressurized are avoided, and at the same time, a separating layer is employed between a drain electrode and the junction type semiconductor layer for blocking the 2DHG; and on the other hand, the 2DHG between the grid and the drain and the 2DEG form polarized super junctions, in case of a blocking state, a drift region is exhausted under assistance, the electric field concentration effect of the end, nearby the drain, of the grid of the device is effectively improved, at the same time, a new electric field peak is introduced to the contact portion between a P-type doping area and an N-type doping area, electric field distribution on the surface of the device is enabled to be more uniform, and breakdown voltage of the device at a switching-off state is improved. The HEMT device with the junction type semiconductor layer is especially suitable for an HEMT device.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

CSTBT device and manufacturing method thereof

The invention discloses a CSTBT device and a manufacturing method thereof, which belong to the field of semiconductor power devices. A groove gate structure is together formed through introducing a groove split electrode below a gate electrode, a P-type layer is introduced below the groove split electrode, a series diode structure is arranged above the groove split electrode, and the problem of acontradictory relationship existing between the forward conduction performance of the device and the voltage-withstanding performance caused through improving the doping concentration of an N-type charge storage layer in the traditional CSTBT device is solved. The saturation current density is reduced and the short circuit safety working area of the device is improved. The gate capacitance of thedevice is reduced, the switching speed is improved, the switching loss is reduced, and the switching performance of the device is improved. The electric field concentration effects at the bottom of the groove are improved to further improve the breakdown voltage of the device. The carrier enhancement effects at the emitter end of the device are improved, the carrier concentration distribution in the whole N-drift region is improved, and the compromise characteristics between forward conduction voltage drop and turning-off losses are further optimized. Besides, the device manufacturing method is compatible with the manufacturing process of the existing CSTBT device.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Comprehensive treatment, filtration and recovery device for mud sewage

The invention provides a comprehensive treatment, filtration and recovery device for mud sewage. The comprehensive treatment, filtration and recovery device comprises a sewage comprehensive filtration and sedimentation device tank body, a spiral feeding conveyer and a double spiral impeller conveying and feeding machine; the tank body comprises a water inlet, a filter cartridge, a back pressure chamber for flushing, a sealing cover, a clear water discharging hole, an access hole and a steel structure system; at the bottom of the tank body, mud is conveyed to the spiral feeding conveyor or a mud conveying pipeline at the lower side through the double spiral impeller conveying and feeding machine and is recovered. In the traditional mud conveying, a sedimentation tank is generally adopted for sedimentation, and the mud is discharged by grabbing with a crane; or the mud in a sedimentation pool is pressurized and conveyed to other users through a pipeline, a mud pump and a pipeline. Such an operating manner is complicated in process, large in occupied space, resulted in secondary pollution, high in investment and energy consumption, poor in filtrate quality, poor in mud concentration effect and difficult in treatment. According to the comprehensive treatment, filtration and recovery device provided by the invention, after all the mud is subjected to suspension, refined filtrating, dehydration and concentration, filtered clear water can be reused as reclaimed water or recycled to realize zero emission.
Owner:重庆市欣荣城机电有限公司

Fluorine-containing sulfuric acid separation concentration device and separation concentration method

InactiveCN102424367ASeparation and concentrationSimple methodSulfur-trioxide/sulfuric-acidWater vaporMixed gas
The invention provides a fluorine-containing sulfuric acid separation concentration method, which comprises the following steps of: providing a raw material liquid which contains sulfuric acid and hydrofluoric acid; and heating the raw material liquid at the pressure of minus 50Pa to minus 100Pa to the temperature of 110-130 DEG C to obtain concentrated sulfuric acid and mixed gases. The invention also provides a fluorine-containing sulfuric acid separation concentration device. According to the invention, when the raw material liquid containing sulfuric acid and hydrofluoric acid are heated at the pressure of minus 50Pa to minus 100Pa to the temperature of 110-130 DEG C, hydrofluoric acid and water in the raw material liquid are separated from sulfuric acid through the form of gaseous hydrogen fluoride and stream, and impurity separation and concentration of sulfuric acid can be simultaneously realized to obtain the mixed gases containing gaseous hydrogen fluoride and concentrated sulfuric acid. The separation concentration method provided by the invention can be used to separate hydrofluoric acid as an impurity from sulfuric acid and simultaneously condense dilute sulfuric acid into concentrated sulfuric acid. The method provided by the invention is simple and has a good separation concentration effect.
Owner:FINE SILICON

Multi-step silicon carbide groove junction termination extension structure and preparation method thereof

The invention provides a multi-step silicon carbide groove junction termination extension structure which comprises a silicon carbide substrate layer, a first semiconductor layer, a multi-step groove structure, a passivation layer, a junction termination extension structure body and an active area, wherein the first semiconductor layer is formed on the substrate layer, the multi-step groove structure is arranged on the surface of the first semiconductor layer, the passivation layer covers the upper portion of the multi-step groove structure, the junction termination extension structure body is arranged in the first semiconductor layer and positioned below the multi-step groove structure and encloses the multi-step groove structure, and the active area is arranged in the first semiconductor layer and abutted with the junction termination extension structure body. According to the extension structure, a multi-step structure is added based on a traditional plane junction termination extension structure, a P-N junction shape in the junction termination extension structure is changed, junction edge curvature is improved, a multi-peak electric field is introduced in the middle of a termination, peak electric fields at two corners of the traditional plane junction termination extension structure are relieved, electric field concentration effect of junction edges is relieved, so that reliability of the termination extension structure in reverse withstand voltage is improved.
Owner:XIDIAN UNIV
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