53results about How to "Lower saturation current density" patented technology

The invention relates to a carrier-storing grooved gate IGBT with a P-type floating layer, belonging to the technical field of semiconductor power devices. On a basis of the prior carrier-storing grooved gate bipolar transistor, a P-type floating layer (13) is introduced to almost free a carrier-storing layer from bearing a withstanding voltage and decrease a forward conducted voltage drop; and the P-type floating layer (13) also improves the electric-field integration effect of the bottom of the grooved gate, thereby effectively decreasing an electric filed with a maximum peak value, preventing the bottom of the grooved gate and the vicinity of the high-concentration carrier-storing layer from being broken down by an overhigh electric field and greatly increasing the breakdown voltage ofthe device. A JFET zone is introduced due to the existence of the P-type floating layer. When the device is forwardly conducted, the resistance of the JFET zone continuously increases along with the continuously increasing voltage of a collector so that the saturation current of the device is decreased, and a lower conducted voltage drop is obtained while maintaining a greater short-circuit safety operation area (SCSOA).

The invention discloses an SOI LIGBT device with a diode-clamped carrier storage layer. By dividing the P-type semiconductor base region into multiple regions and introducing two or three series diodes in different regions, the device can be used in reverse When the potential of the P-type electric field shielding area rises to the conduction voltage drop of two or three diodes, the diode is turned on, and the potential of the P-type electric field shielding area is clamped to two or three diodes. The voltage drop is close, so the potential of the N-type carrier storage region is well shielded by the P-type electric field shielding region at a very low value, and the withstand voltage of the device will mainly be the reverse of the P-type electric field shielding region and the surface withstand voltage region. The biased diode bears, thus completely breaking the contradictory relationship between the breakdown voltage and the concentration of the N-type carrier layer.

A bidirectional IGBT device and a manufacturing method thereof belong to the technical field of power semiconductor devices. The invention realizes symmetrical forward and reverse characteristics without affecting the threshold voltage and turn-on of the IGBT device by introducing an electrode with the same potential as the metal electrode and a dielectric layer at the bottom and side of the gate electrode in the trench on the front and back of the device. , improve the forward and reverse switching speed of the bidirectional IGBT device, reduce the switching loss of the device; improve the carrier concentration distribution in the entire N-type drift region, and improve the compromise between the forward conduction voltage drop and the switching loss; reduce The saturation current density of the device is improved, the short-circuit safe working area of ​​the device is improved, the concentration of the electric field at the bottom of the trench is improved, the breakdown voltage of the device is improved, and the reliability of the device is further improved; the bidirectional IGBT manufacturing method proposed by the present invention It does not need to add additional process steps, and is compatible with the traditional bidirectional IGBT manufacturing method.

A bidirectional trench gate charge storage type IGBT belongs to the technical field of semiconductor power devices. By widening the traditional trench gate structure and adopting the sidewall gate electrode structure to form a mesa structure under the base region and introducing a shielding trench structure, the present invention realizes the symmetrical forward / reverse conduction and turn-off characteristics of the device At the same time, it increases the carrier injection enhancement effect and improves the forward conduction voltage drop V ceon and turn-off loss E off The compromise between; alleviate the electric field concentration effect at the sharp corner of the bottom of the trench, effectively improve the breakdown voltage of the device; reduce the gate capacitance of the device, thereby improving the switching speed of the device, reducing the switching loss of the device and the Requirements for the capability of the gate drive circuit; avoiding the limitation of the doping concentration and thickness of the N-type charge storage layer on the device withstand voltage; reducing the saturation current density and improving the short-circuit safe working area of ​​the device; and effectively inhibiting the device from being turned on EMI effect. In addition, the manufacturing method provided by the present invention is compatible with the traditional CSTBT manufacturing method.

The invention relates to the field of power semiconductors, and provides a high-speed IGBT device with an ultra-low conduction voltage drop, which is used to overcome the high conduction voltage drop, low turn-off speed, and short-circuit safety of the existing slot-gate IGBT with a carrier storage layer. The problem of small working area and large gate drive loss. The IGBT device of the present invention integrates two diodes connected in series on the surface of the silicon wafer to clamp the potential of the P-type electric field shielding layer by using the same process doping, so that the doping concentration of the CSL layer can be increased by 3-4 orders of magnitude; the weight of the CSL layer Doping greatly improves the electron injection efficiency of the IGBT emitter, thereby greatly improving the trade-off relationship between the turn-on voltage drop and turn-off loss of the IGBT at a lower channel density; at the same time, due to the clamping of the diode Bit action, so that the drain near the nMOS channel of the IGBT is clamped at a lower voltage under high voltage and high current, so that the saturation current density of the new IGBT is greatly reduced, thereby improving the short-circuit safe operating area of ​​the IGBT .