53results about How to "Lower saturation current density" patented technology

The invention discloses a charge storage-type insulated gate bipolar transistor with a trench gate and a manufacturing method of the charge storage-type insulated gate bipolar transistor and belongs to the field of semiconductor power devices. A trench emitter structure is introduced into an N-type drift region of a traditional CSTBT structure, a P-type layer and a series diode structure are sequentially introduced to the lower part and the surface of the trench emitter structure, and meanwhile, the insulated gate bipolar transistor has a trench gate structure which partially penetrates into an N-type charge storage layer along the vertical direction, so that the problem of a contradictory relationship between the positive conduction performance and the voltage resistance of a device due to improvement of the doping concentration of the N-type charge storage layer in the traditional CSTBT is solved through the improvement; the saturation current density of the device is reduced and a short-circuit safety operation area of the device is improved; the switching speed of the device is improved and the switching loss is reduced; the breakdown voltage of the device is improved and the reliability is improved; compromise between a positive conduction voltage drop and the turn-off loss is optimized; and meanwhile, the manufacturing method of the device is compatible with a manufacturing technology of an existing CSTBT device.

The invention relates to a trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and a manufacturing method thereof, and belongs to the technical field of power semiconductor devices. According to the invention, the extending depth of an emission region along the top layer of a base region in the traditional trench gate charge storage type IGBT structure is reduced, and a splittrench gate structure is introduced, wherein the split trench gate structure comprises a gate electrode, a gate dielectric layer at the periphery of the gate electrode, a split electrode which is located at the bottom of the gate electrode and connected through the gate dielectric layer and a split electrode dielectric layer located at the periphery of the split electrode, and the split electrodeis equipotential with emitter metal. The device structure provided by the invention improves a short-circuit safe working area and temperature characteristics of the device and the compromise betweenforward turn-on voltage drop Vceon and turn-off loss Eoff of the device while improving restrictions imposed on withstand voltage of the device by the doping concentration and thickness of the chargestorage layer, avoids current and voltage oscillation and EMI problems in the dynamic process of starting the device and improves the reliability of the device.

The invention belongs to the field of power semiconductors, and particularly provides a SiC power device. The SiC power device comprises a SiC MOSFET and a SiC IGBT. For the SiC MOSFET device integrated with a PN junction body diode, the reverse recovery charge and related loss of the body diode can be greatly reduced, the reverse recovery peak current is reduced, and the EMI noise is reduced; forthe SiC MOSFET device integrated with an N-type Schottky diode or an integrated heterojunction diode, the voltage drop during reverse conduction of the MOSFET can be reduced, and the minority carrierinjection effect is eliminated, so that the conduction loss and reverse recovery loss of the diode are reduced; for the reverse conduction type SiC IGBT device integrated with the PN junction body diode, the reverse recovery charge and related loss of the body diode can be greatly reduced, the reverse recovery peak current is reduced, and the EMI noise is reduced; and moreover, for the reverse conduction type SiC IGBT device integrated with the N-type Schottky diode or the heterojunction diode, the voltage drop during reverse conduction of the reverse conduction IGBT can be reduced, the minority carrier injection effect is eliminated, and the conduction loss and reverse recovery loss of the diode are reduced.

The invention relates to a bi-directional insulated gate bipolar transistor (IGBT) device and a fabrication method thereof, belonging to the technical field of a power semiconductor device. A double-split electrode and a dielectric layer between the double-split electrode and gate electrodes are introduced to be arranged at the bottom and on the side surface of gate electrodes in trenches in the front surface and the back surface of the device, thus, the symmetric positive and negative characteristics are achieved on the condition that the threshold voltage of the IGBT device is not affected and the IGBT device is switched on, the positive and negative switching speeds of the bi-directional IGBT device are increased, and the switching loss of the device is reduced; the carrier concentration distribution of the whole N-type drift region is improved, and the positive conduction voltage drop and the average switching loss are improved; and the saturated current density of the device is reduced, the short-circuit safety working region of the device is improved, the concentration of an electric field at the bottom of the trench is improved, the breakdown voltage of the device is increased, and the reliability of the device is further improved. According to the fabrication method of the bi-directional IGBT, provided by the invention, no extra process step is needed, and the fabrication method is compatible with the fabrication method of a traditional bi-directional IGBT.

The invention discloses a CSTBT device and a manufacturing method thereof, which belong to the field of semiconductor power devices. A groove gate structure is together formed through introducing a groove split electrode below a gate electrode, a P-type layer is introduced below the groove split electrode, a series diode structure is arranged above the groove split electrode, and the problem of acontradictory relationship existing between the forward conduction performance of the device and the voltage-withstanding performance caused through improving the doping concentration of an N-type charge storage layer in the traditional CSTBT device is solved. The saturation current density is reduced and the short circuit safety working area of the device is improved. The gate capacitance of thedevice is reduced, the switching speed is improved, the switching loss is reduced, and the switching performance of the device is improved. The electric field concentration effects at the bottom of the groove are improved to further improve the breakdown voltage of the device. The carrier enhancement effects at the emitter end of the device are improved, the carrier concentration distribution in the whole N-drift region is improved, and the compromise characteristics between forward conduction voltage drop and turning-off losses are further optimized. Besides, the device manufacturing method is compatible with the manufacturing process of the existing CSTBT device.

The invention belongs to the technical field of a power semiconductor device, in particular relates to a reverse-conducting trench gate charge storage insulated-gate bipolar transistor (IGBT). By introducing a side-surfaces split electrode connected with an emitter into a trench on the condition of a certain device trench depth and a certain trench metal oxide semiconductor (MOS) structure density, the gate capacitance of the device is reduced, the switching speed of the device is increased, the switching loss is reduced, and the positive conduction voltage drop and the average switching loss are improved; meanwhile, the density of an MOS channel is reduced, the short-circuit safety working region of the IGBT is improved, and the performance and the reliability of the device are improved; and a reverse freewheeling diode works in multiple submodes in a working mode of the reverse freewheeling diode, the IGBG has low diode conduction voltage drop, and the reverse recovery characteristic of the freewheeling diode is improved.

The invention discloses a trench gate charge storage type IGBT, and belongs to the technical field of semiconductor power devices. A conventional trench gate structure is widened, and a side wall gateelectrode structure is employed for forming a mesa structure located below a base region. moreover, a shielding trench structure for shielding the electric field of a charge storage layer is introduced, thereby improving the carrier injection enhancement effect, and improving the compromise between a forwarding ON voltage drop Vceon and the OFF loss Eoff. The electric field concentration effect at the tip of the bottom of a trench is alleviated, and the breakdown voltage of a device is effectively improved. The gate capacitance of the device, especially the Miller capacitance CGC and the gatecharge QG, is reduced, the switching speed of the device is improved, the switching loss of the device is reduced, and the requirements for the capability of a gate drive circuit are reduced. The constraint on the doping concentration of an N-type charge storage layer and the withstand voltage of the device from the thickness are avoided, the saturation current density is reduced, and a short-circuit safe operating region (SCSOA) of the device is improved. Moreover, an EMI effect is effectively inhibited when the device is turned on. In addition, the manufacturing method is compatible with aconventional trench gate charge storage type IGBT manufacturing method.

The present invention relates to a bidirectional IGBT device and a manufacturing method thereof, and belongs to the power semiconductor device technology field. According to the present invention, by introducing an electrode equipotential with a metal electrode and a dielectric layer at the bottom and the side surface of a gate electrode in a trench in the right backside of the device, and on the condition of not influencing the threshold voltage and the conduction of the IGBT device, the symmetrical forward and reverse characteristics are realized, the forward and reverse switching speed, a short circuit safe working region and a breakdown voltage of the bidirectional IGBT device are improved, the switching loss and the saturation current density of the device are reduced, the carrier concentration distribution of a whole N-type drift region, the compromise of the forward conduction voltage drop and the switching loss and the concentration of an electric field at the bottom of the trench are improved, and further the reliability of the device is improved. The bidirectional IGBT device manufacturing method provided by the present invention does not need the additional process steps, and is compatible with a conventional bidirectional IGBT manufacturing method.

The invention discloses a bidirectional IGBT and a manufacturing method therefor, and belongs to the technical field of power semiconductor devices. According to the invention, a split electrode whichis equipotential with a surface metal and a thick dielectric layer located at a peripheral side of the split electrode are introduced to a conventional trench gate structure, and a floating P-type body region is introduced to one side of a split trench gate structure, thereby achieving the symmetric forwarding and reverse on/off characteristics of an IGBT structure under the condition that a threshold voltage and connection of an IGBT device are not affected. The adverse effect caused by the Miller effect is improved, and the drive power consumption is reduced. The current and voltage oscillation and EMI problems are avoided in a start dynamic process of the device. The short-circuit safety working area of the device is improved. The gate capacitance is reduced, the switching speed of thedevice is improved, and the switching loss of the device is reduced. The concentration of an electric field at the bottom of a trench is improved, and the breakdown voltage of the device is improved.The carrier enhancement effect of an emitter electrode is improved, the carrier concentration distribution of the whole N-type drift region is improved, and the compromise between the forwarding conduction voltage drop and switching-off loss is improved.

The invention relates to the field of power semiconductors, provides an IGBT device with a carrier storage layer using diode clamping, and solves the problems that the saturation voltage of an existing groove gate IGBT with the carrier storage layer (CSL) is high, a short circuit safe working area is smaller, and the CSL concentration is limited. The IGBT device with the carrier storage layer using diode clamping has the advantages that the IGBT directly integrates one or more series diodes on the surface of a silicon wafer through a groove gate IGBT process for clamping electric potential ofan electric field shielding layer of a P region, on the basis of the groove gate IGBT process, the limitation of the CSL concentration is broken through, the injection efficiency of an IGBT emitting electrode is greatly improved, thereby greatly improving the tradeoff relationship between conduction voltage drop and turn-off loss of the IGBT; due to the clamping action of a diode, a drain electrode near an nMOS channel of the IGBT is clamped at a lower voltage under the high voltage and large current, so that saturation current of the novel IGBT is reduced to a great extent, thereby enlargingthe short circuit safe working area of the IGBT.

The invention relates to a three-dimensional separated gate trench charge storage type IGBT and a manufacturing method thereof, and belongs to the technical field of power semiconductor devices. According to the present invention, a P-type buried layer and a separated gate electrode equipotential with the emitter metal are introduced on the basis of a traditional CSTBT, the influence of the doping concentration of an N-type charge storage layer on the breakdown characteristic of a device is effectively eliminated through charge compensation, and meanwhile, the conduction voltage drop can be reduced by improving the doping concentration of the N-type charge storage layer. According to the present invention, the gate electrodes and the separated gate electrodes are placed in a same groove, and the gate electrodes are arranged at intervals along the Z-axis direction, so that on one hand, the channel density can be reduced, on the other hand, a parasitic PMOS structure can be formed in a cell, the saturation current density can be reduced, and a short-circuit safe working area can be improved; and meanwhile, the gate capacitance and gate charge are reduced, the switching loss of the device is reduced, the compromise relationship between the forward conduction voltage drop Vceon and the turn-off loss Eoff is further improved; and in addition, the improvement of the current uniformity and the improvement of the reliability of the device are also facilitated.

The invention relates to a bidirectional trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and a manufacturing method thereof, and belongs to the technical field of power semiconductor devices. According to the invention, the extending depth of an emission region along the top layer of a base region in the traditional bidirectional trench gate charge storage type IGBT structure is reduced, and a split trench gate structure is introduced, wherein the split trench gate structure comprises a gate electrode, a gate dielectric layer at the periphery of the gate electrode, a split electrode which is located at the bottom of the gate electrode and connected through the gate dielectric layer and a split electrode dielectric layer located at the periphery of the split electrode, and the split electrode is equipotential with emitter metal. The device structure provided by the invention improves the comprehensive performance of the device while realizing symmetrical forward/backward turn-on and turn-off characteristics, can improve a short-circuit safe working area and temperature characteristics of the device and the compromise between forward turn-on voltage drop Vceon and turn-off loss Eoff of the device while avoiding the restriction imposed on withstand voltage of the device by the doping concentration and thickness of a charge storage layer, avoids current andvoltage oscillation and EMI problems in the dynamic process of starting the device and improves the reliability of the device.

The invention discloses a bidirectional trench gate charge storage IGBT, and belongs to the technical field of semiconductor power devices. A shielding trench structure having the same potential as anemitter metal is introduced on the basis of a conventional bidirectional CSTBT device structure, and the trench depth is enabled to be greater than the thickness of a charge storage layer, so as to shield the electric field of the charge storage layer. The introduction of the shielding trench structure achieves the effective charge compensation for the charge storage layer, thereby reducing the constraint, caused by the doping concentration and thickness of the charge storage layer, on the withstand voltage of a device, and improving the breakdown voltage of the device. The improvement of thecompromise relation between a forward voltage drop Vceon of the device and the turn-off loss Eoff is facilitated, and a wider short-circuit safety work region is obtained, thereby facilitating the reduction of the saturation current intensity of the device, and further improving the short-circuit safety work region of the device. In addition, the IGBT remarkably reduces the gate capacitance of the device, especially the gate-collector capacitance, thereby improving the switching speed of the device, and reducing the turn-off loss of the device and the requirements for the capability of a gatedrive circuit.