53results about How to "Lower saturation current density" patented technology

The invention discloses a charge storage-type insulated gate bipolar transistor with a trench gate and a manufacturing method of the charge storage-type insulated gate bipolar transistor and belongs to the field of semiconductor power devices. A trench emitter structure is introduced into an N-type drift region of a traditional CSTBT structure, a P-type layer and a series diode structure are sequentially introduced to the lower part and the surface of the trench emitter structure, and meanwhile, the insulated gate bipolar transistor has a trench gate structure which partially penetrates into an N-type charge storage layer along the vertical direction, so that the problem of a contradictory relationship between the positive conduction performance and the voltage resistance of a device due to improvement of the doping concentration of the N-type charge storage layer in the traditional CSTBT is solved through the improvement; the saturation current density of the device is reduced and a short-circuit safety operation area of the device is improved; the switching speed of the device is improved and the switching loss is reduced; the breakdown voltage of the device is improved and the reliability is improved; compromise between a positive conduction voltage drop and the turn-off loss is optimized; and meanwhile, the manufacturing method of the device is compatible with a manufacturing technology of an existing CSTBT device.

The invention discloses a trench gate charge storage type insulated gate bipolar transistor and a manufacturing method therefor, and belongs to the technical field of a semiconductor power device. Byovercoming the adverse influence of an N type charge storage layer in the conventional structure, more excellent voltage withstand performance is obtained; and compared with the conventional mode, thecompromising characteristic among the switching performance, switch-on voltage drop and switching loss of the device is realized by increasing the trench gate depth and reducing cellular width, and the problem of reliability degradation is solved. By introducing a series diode structure into a P type body region, the channel voltage of an MOSFET is clamped at a quite small value, thereby loweringdevice saturated current density and improving the short-circuit safety working region of the device; by introducing a split electrode and a split electrode dielectric layer to the trench gate structure, the threshold voltage and switching speed of the device are ensured while the switching performance of the device is improved; and by virtue of the floating P type body region, the compromising characteristic between the forward switch-on voltage drop and switching loss of the device is improved. In addition, the manufacturing process of the CSTBT device is compatible with the conventional manufacturing process.

The invention belongs to the technical field of a power semiconductor device and specifically relates to a groove gate charge storage type IGBT (insulated gate bipolar transistor). The bottom and side surfaces of a gate electrode in a groove of the device are provided with a double-split electrode equipotential with an emitter and a dielectric layer between the double-split electrode and the gate electrode, so that under the condition of not influencing threshold voltage and turning on of the IGBT device, grid capacitance is reduced, switching speed of the device is improved, and switching loss of the device is reduced; and meanwhile, the side-surface split electrode and a floating p-type base region at one side of the side-surface split electrode improve short circuit safety operation area of the device and carrier concentration distribution of the whole N drifting region, thereby improving performance and reliability of the device. The double-split groove gate charge storage type IGBT manufacturing method does not need extra processing steps, and is compatible with a conventional CSTB manufacturing method.

The invention relates to a trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and a manufacturing method thereof, and belongs to the technical field of power semiconductor devices. According to the invention, the extending depth of an emission region along the top layer of a base region in the traditional trench gate charge storage type IGBT structure is reduced, and a splittrench gate structure is introduced, wherein the split trench gate structure comprises a gate electrode, a gate dielectric layer at the periphery of the gate electrode, a split electrode which is located at the bottom of the gate electrode and connected through the gate dielectric layer and a split electrode dielectric layer located at the periphery of the split electrode, and the split electrodeis equipotential with emitter metal. The device structure provided by the invention improves a short-circuit safe working area and temperature characteristics of the device and the compromise betweenforward turn-on voltage drop Vceon and turn-off loss Eoff of the device while improving restrictions imposed on withstand voltage of the device by the doping concentration and thickness of the chargestorage layer, avoids current and voltage oscillation and EMI problems in the dynamic process of starting the device and improves the reliability of the device.

The invention relates to a grooved gate IGBT with a P-type floating layer, belonging to the technical filed of semiconductor power devices. On a basis of grooved gate insulated-gate bipolar transistor (IGBT) controlled by an accumulation layer, a P-type floating layer (11) is introduced to effectively improve the electric-field integration effect of the bottom of the grooved gate and greatly increase the breakdown voltage of the device. Meanwhile, due to the existence of the P-type floating layer, a JFET zone is introduced to play the effect of shielding the groove barrier potential of the accumulation layer to a certain extent and greatly reduce the drain current of the device. When the device is forwardly conducted, the saturation current density of the device is greatly decreased so as to greatly improve the short-circuit safety operation area (SCSOA) of the device. The invention maintains the original low forward-conducted voltage drop of the grooved gate IGBT controlled by the accumulation layer and increases the forward bias safety operation area (FBSOA) and the bolt current density while decreasing the drain current of the device, improving the breakdown voltage of the device and greatly improving the SCSOA of the device.

The invention belongs to the field of power semiconductors, and particularly provides a SiC power device. The SiC power device comprises a SiC MOSFET and a SiC IGBT. For the SiC MOSFET device integrated with a PN junction body diode, the reverse recovery charge and related loss of the body diode can be greatly reduced, the reverse recovery peak current is reduced, and the EMI noise is reduced; forthe SiC MOSFET device integrated with an N-type Schottky diode or an integrated heterojunction diode, the voltage drop during reverse conduction of the MOSFET can be reduced, and the minority carrierinjection effect is eliminated, so that the conduction loss and reverse recovery loss of the diode are reduced; for the reverse conduction type SiC IGBT device integrated with the PN junction body diode, the reverse recovery charge and related loss of the body diode can be greatly reduced, the reverse recovery peak current is reduced, and the EMI noise is reduced; and moreover, for the reverse conduction type SiC IGBT device integrated with the N-type Schottky diode or the heterojunction diode, the voltage drop during reverse conduction of the reverse conduction IGBT can be reduced, the minority carrier injection effect is eliminated, and the conduction loss and reverse recovery loss of the diode are reduced.

The invention relates to a bi-directional insulated gate bipolar transistor (IGBT) device and a fabrication method thereof, belonging to the technical field of a power semiconductor device. A double-split electrode and a dielectric layer between the double-split electrode and gate electrodes are introduced to be arranged at the bottom and on the side surface of gate electrodes in trenches in the front surface and the back surface of the device, thus, the symmetric positive and negative characteristics are achieved on the condition that the threshold voltage of the IGBT device is not affected and the IGBT device is switched on, the positive and negative switching speeds of the bi-directional IGBT device are increased, and the switching loss of the device is reduced; the carrier concentration distribution of the whole N-type drift region is improved, and the positive conduction voltage drop and the average switching loss are improved; and the saturated current density of the device is reduced, the short-circuit safety working region of the device is improved, the concentration of an electric field at the bottom of the trench is improved, the breakdown voltage of the device is increased, and the reliability of the device is further improved. According to the fabrication method of the bi-directional IGBT, provided by the invention, no extra process step is needed, and the fabrication method is compatible with the fabrication method of a traditional bi-directional IGBT.

The invention discloses a CSTBT device and a manufacturing method thereof, which belong to the field of semiconductor power devices. A groove gate structure is together formed through introducing a groove split electrode below a gate electrode, a P-type layer is introduced below the groove split electrode, a series diode structure is arranged above the groove split electrode, and the problem of acontradictory relationship existing between the forward conduction performance of the device and the voltage-withstanding performance caused through improving the doping concentration of an N-type charge storage layer in the traditional CSTBT device is solved. The saturation current density is reduced and the short circuit safety working area of the device is improved. The gate capacitance of thedevice is reduced, the switching speed is improved, the switching loss is reduced, and the switching performance of the device is improved. The electric field concentration effects at the bottom of the groove are improved to further improve the breakdown voltage of the device. The carrier enhancement effects at the emitter end of the device are improved, the carrier concentration distribution in the whole N-drift region is improved, and the compromise characteristics between forward conduction voltage drop and turning-off losses are further optimized. Besides, the device manufacturing method is compatible with the manufacturing process of the existing CSTBT device.

The invention belongs to the technical field of a power semiconductor device, in particular relates to a reverse-conducting trench gate charge storage insulated-gate bipolar transistor (IGBT). By introducing a side-surfaces split electrode connected with an emitter into a trench on the condition of a certain device trench depth and a certain trench metal oxide semiconductor (MOS) structure density, the gate capacitance of the device is reduced, the switching speed of the device is increased, the switching loss is reduced, and the positive conduction voltage drop and the average switching loss are improved; meanwhile, the density of an MOS channel is reduced, the short-circuit safety working region of the IGBT is improved, and the performance and the reliability of the device are improved; and a reverse freewheeling diode works in multiple submodes in a working mode of the reverse freewheeling diode, the IGBG has low diode conduction voltage drop, and the reverse recovery characteristic of the freewheeling diode is improved.

The invention relates to the field of power semiconductors, and provides a planar gate IGBT device with a deep trench electric field shielding structure, which is used for overcoming the problems thata current groove-gate IGBT gate with a carrier storage layer is too large in drive charges and small in short-circuit safety working region and is limited in the concentration of the CSL layer. The deep groove used for manufacturing the groove-gate IGBT channel traditionally and a P-type buried layer at the bottom portion of the groove are combined to form an electric field shielding structure toachieve clamping of the potential of the carrier storage layer; one IGBT cell is internally provided with a plurality of deep grooves to improve the concentration of the carrier storage layer of theIGBT compared to a traditional IGBT, have the higher cathode injection efficiency, and obtain the better trade-off relation of the on-state voltage and the turn-off loss. A planar gate and an electricfield shielding structure are employed, the IGBT has lower gate drive power consumption and lower saturation current density so as to improve the safety working region of the IGBT.

The invention belongs to the technical field of power semiconductor devices, and particularly relates to a reverse conducting trench gate charge storage-type insulated-gate bipolar transistor. Double split electrodes which are equipotential to an emitter and dielectric layers between the double split electrodes and a gate electrode are introduced into the bottom part and the side surfaces of the gate electrode in a trench of an RC-IGBT device, so that the switching speed of the device is improved in the working mode of the IGBT; the switching loss of the device is reduced; the saturation current density of the device is reduced; a short-circuit safe operation area of the device is improved; and the reliability is improved. A reverse free-wheeling diode has a low diode turn-on voltage drop in the working mode of the reverse free-wheeling diode; and the reverse recovery characteristics of the free-wheeling diode are improved. Meanwhile, by the manufacturing method of the double split trench gate charge storage-type RC-IGBT provided by the invention, an additional process step does not need to be added; and the manufacturing method is compatible with a traditional manufacturing method of the RC-IGBT.

The invention discloses a trench gate charge storage type IGBT, and belongs to the technical field of semiconductor power devices. A conventional trench gate structure is widened, and a side wall gateelectrode structure is employed for forming a mesa structure located below a base region. moreover, a shielding trench structure for shielding the electric field of a charge storage layer is introduced, thereby improving the carrier injection enhancement effect, and improving the compromise between a forwarding ON voltage drop Vceon and the OFF loss Eoff. The electric field concentration effect at the tip of the bottom of a trench is alleviated, and the breakdown voltage of a device is effectively improved. The gate capacitance of the device, especially the Miller capacitance CGC and the gatecharge QG, is reduced, the switching speed of the device is improved, the switching loss of the device is reduced, and the requirements for the capability of a gate drive circuit are reduced. The constraint on the doping concentration of an N-type charge storage layer and the withstand voltage of the device from the thickness are avoided, the saturation current density is reduced, and a short-circuit safe operating region (SCSOA) of the device is improved. Moreover, an EMI effect is effectively inhibited when the device is turned on. In addition, the manufacturing method is compatible with aconventional trench gate charge storage type IGBT manufacturing method.

The invention provides a bi-directional trench gate charge storage type IGBT (insulated-gate bipolar transistor) and belongs to the technical field of a semiconductor power device. By means of widening of a traditional trench gate structure, formation of a mesa structure below a base region by a side wall gate electrode structure as well as introduction of a shielding trench structure, carrier injection enhancement effect is increased while symmetric forward / reverse conduction and turn-off characteristics of the device are realized, and compromise between forward voltage drop Vceon and turn-off loss Eoff is improved; electric field concentration effect at a sharp corner of the bottom of a trench is reduced, and breakdown voltage of the device is effectively increased; gate capacitance of the device is reduced, so that switching speed of the device is increased, switching loss of the device is reduced, and the requirement for capacity of a gate driven circuit is reduced; limitation of doping concentration and thickness of an N-type charge storage layer to device withstand voltage is avoided; saturation current density is reduced, and a short circuit safe operating area of the deviceis improved; further, EMI (electro-magnetic interference) effect produced when the device is conducted is effectively inhibited. Besides, a manufacturing method is compatible with a traditional CSTBTmanufacturing method.

The present invention relates to a bidirectional IGBT device and a manufacturing method thereof, and belongs to the power semiconductor device technology field. According to the present invention, by introducing an electrode equipotential with a metal electrode and a dielectric layer at the bottom and the side surface of a gate electrode in a trench in the right backside of the device, and on the condition of not influencing the threshold voltage and the conduction of the IGBT device, the symmetrical forward and reverse characteristics are realized, the forward and reverse switching speed, a short circuit safe working region and a breakdown voltage of the bidirectional IGBT device are improved, the switching loss and the saturation current density of the device are reduced, the carrier concentration distribution of a whole N-type drift region, the compromise of the forward conduction voltage drop and the switching loss and the concentration of an electric field at the bottom of the trench are improved, and further the reliability of the device is improved. The bidirectional IGBT device manufacturing method provided by the present invention does not need the additional process steps, and is compatible with a conventional bidirectional IGBT manufacturing method.

The invention provides a carrier storage layer IGBT (insulated gate bipolar transistor) device with shielding gates. According to the invention, under the condition that the cell width of the device is kept at a certain value, the distance between trench gates is reduced by adding a floating shielding gate on the two sides of an original trench gate. Meanwhile, the grid-emitter capacitance and thegrid-collector capacitance of the device are also reduced, and the switching speed of the device is increased. The switching loss is reduced. Meanwhile, the saturation current density of the device is reduced, so that the short-circuit working area is improved. The voltage-withstanding performance of the device is improved. By reasonably adjusting the concentration thickness of the carrier storage area and the distance between shielding gates, the grid-emitter capacitance and the grid-collector capacitance of the device are reduced under the condition that the breakdown voltage is the same asthat of a conventional carrier storage trench bipolar transistor. As a result, the effect of improving the switching speed is achieved.

The invention relates to a trench gate charge storage type IGBT (Insulated Gate Bipolar Translator), and belongs to the technical field of semiconductor power devices. According to the invention, a shielding trench structure which is equipotential with emitter metal is introduced on the basis of the traditional CSTBT device structure, and the trench depth of the shielding trench structure is enabled to be greater than that of a charge storage layer so as to shield an electric field of the charge storage layer. The introduction of the shielding trench structure plays an effective charge compensation effect for the charge storage layer, thus improves restrictions imposed on withstand voltage of the device by the doping concentration and thickness of the charge storage layer, and improves thebreakdown voltage of the device, thereby being conducive to improving the compromise between forward turn-on voltage drop Vceon and turn-off loss Eoff of the device, obtaining a wider short-circuit safe working area, being conducive to reducing the saturation current density of the device at the same time, and further improving the short-circuit safe working area of the device. In addition, the trench gate charge storage type IGBT significantly reduces the grid capacitance of the device and especially reduces the grid-collector capacitance, so that the switching speed of the device is improved, and the switching loss of the device and requirements for the ability of a gate driving circuit are reduced.

The invention discloses a trench gate charge storage-type IGBT device with a clamp structure and a manufacturing method thereof, which belong to the field of semiconductor power devices. A clamp electrode connected with emitter metal through a series diode structure is introduced below a gate electrode in the device trench, and a connected P-type layer is arranged below the clamp electrode. Negative influences on the voltage withstanding performance of the device by improvement of the doping concentration of an N-type charge storage layer can be effectively shielded, and the contradiction between forward conduction and voltage withstanding of the traditional CSTBT structure is overcome; the saturation current density of the device is reduced, and the device short circuit safe working areais improved; the device switching speed is improved, and the device switching loss is reduced; negative differential capacitance effects are not formed during an opening dynamic process, current and voltage oscillation and an EMI problem during the opening dynamic process can be effectively avoided, and the device reliability is improved; and the electric field concentration effects at the bottomof the trench are improved, and the breakdown voltage of the device is improved.

The invention discloses a bidirectional IGBT and a manufacturing method therefor, and belongs to the technical field of power semiconductor devices. According to the invention, a split electrode whichis equipotential with a surface metal and a thick dielectric layer located at a peripheral side of the split electrode are introduced to a conventional trench gate structure, and a floating P-type body region is introduced to one side of a split trench gate structure, thereby achieving the symmetric forwarding and reverse on / off characteristics of an IGBT structure under the condition that a threshold voltage and connection of an IGBT device are not affected. The adverse effect caused by the Miller effect is improved, and the drive power consumption is reduced. The current and voltage oscillation and EMI problems are avoided in a start dynamic process of the device. The short-circuit safety working area of the device is improved. The gate capacitance is reduced, the switching speed of thedevice is improved, and the switching loss of the device is reduced. The concentration of an electric field at the bottom of a trench is improved, and the breakdown voltage of the device is improved.The carrier enhancement effect of an emitter electrode is improved, the carrier concentration distribution of the whole N-type drift region is improved, and the compromise between the forwarding conduction voltage drop and switching-off loss is improved.

The invention relates to the field of power semiconductors, provides an IGBT device with a carrier storage layer using diode clamping, and solves the problems that the saturation voltage of an existing groove gate IGBT with the carrier storage layer (CSL) is high, a short circuit safe working area is smaller, and the CSL concentration is limited. The IGBT device with the carrier storage layer using diode clamping has the advantages that the IGBT directly integrates one or more series diodes on the surface of a silicon wafer through a groove gate IGBT process for clamping electric potential ofan electric field shielding layer of a P region, on the basis of the groove gate IGBT process, the limitation of the CSL concentration is broken through, the injection efficiency of an IGBT emitting electrode is greatly improved, thereby greatly improving the tradeoff relationship between conduction voltage drop and turn-off loss of the IGBT; due to the clamping action of a diode, a drain electrode near an nMOS channel of the IGBT is clamped at a lower voltage under the high voltage and large current, so that saturation current of the novel IGBT is reduced to a great extent, thereby enlargingthe short circuit safe working area of the IGBT.

The invention relates to a three-dimensional separated gate trench charge storage type IGBT and a manufacturing method thereof, and belongs to the technical field of power semiconductor devices. According to the present invention, a P-type buried layer and a separated gate electrode equipotential with the emitter metal are introduced on the basis of a traditional CSTBT, the influence of the doping concentration of an N-type charge storage layer on the breakdown characteristic of a device is effectively eliminated through charge compensation, and meanwhile, the conduction voltage drop can be reduced by improving the doping concentration of the N-type charge storage layer. According to the present invention, the gate electrodes and the separated gate electrodes are placed in a same groove, and the gate electrodes are arranged at intervals along the Z-axis direction, so that on one hand, the channel density can be reduced, on the other hand, a parasitic PMOS structure can be formed in a cell, the saturation current density can be reduced, and a short-circuit safe working area can be improved; and meanwhile, the gate capacitance and gate charge are reduced, the switching loss of the device is reduced, the compromise relationship between the forward conduction voltage drop Vceon and the turn-off loss Eoff is further improved; and in addition, the improvement of the current uniformity and the improvement of the reliability of the device are also facilitated.

The invention relates to a bidirectional trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and a manufacturing method thereof, and belongs to the technical field of power semiconductor devices. According to the invention, the extending depth of an emission region along the top layer of a base region in the traditional bidirectional trench gate charge storage type IGBT structure is reduced, and a split trench gate structure is introduced, wherein the split trench gate structure comprises a gate electrode, a gate dielectric layer at the periphery of the gate electrode, a split electrode which is located at the bottom of the gate electrode and connected through the gate dielectric layer and a split electrode dielectric layer located at the periphery of the split electrode, and the split electrode is equipotential with emitter metal. The device structure provided by the invention improves the comprehensive performance of the device while realizing symmetrical forward / backward turn-on and turn-off characteristics, can improve a short-circuit safe working area and temperature characteristics of the device and the compromise between forward turn-on voltage drop Vceon and turn-off loss Eoff of the device while avoiding the restriction imposed on withstand voltage of the device by the doping concentration and thickness of a charge storage layer, avoids current andvoltage oscillation and EMI problems in the dynamic process of starting the device and improves the reliability of the device.

The invention discloses a bidirectional trench gate charge storage IGBT, and belongs to the technical field of semiconductor power devices. A shielding trench structure having the same potential as anemitter metal is introduced on the basis of a conventional bidirectional CSTBT device structure, and the trench depth is enabled to be greater than the thickness of a charge storage layer, so as to shield the electric field of the charge storage layer. The introduction of the shielding trench structure achieves the effective charge compensation for the charge storage layer, thereby reducing the constraint, caused by the doping concentration and thickness of the charge storage layer, on the withstand voltage of a device, and improving the breakdown voltage of the device. The improvement of thecompromise relation between a forward voltage drop Vceon of the device and the turn-off loss Eoff is facilitated, and a wider short-circuit safety work region is obtained, thereby facilitating the reduction of the saturation current intensity of the device, and further improving the short-circuit safety work region of the device. In addition, the IGBT remarkably reduces the gate capacitance of the device, especially the gate-collector capacitance, thereby improving the switching speed of the device, and reducing the turn-off loss of the device and the requirements for the capability of a gatedrive circuit.

A bidirectional IGBT device and a manufacturing method thereof belong to the technical field of power semiconductor devices. The invention realizes symmetrical forward and reverse characteristics without affecting the threshold voltage and turn-on of the IGBT device by introducing an electrode with the same potential as the metal electrode and a dielectric layer at the bottom and side of the gate electrode in the trench on the front and back of the device. , improve the forward and reverse switching speed of the bidirectional IGBT device, reduce the switching loss of the device; improve the carrier concentration distribution in the entire N-type drift region, and improve the compromise between the forward conduction voltage drop and the switching loss; reduce The saturation current density of the device is improved, the short-circuit safe working area of ​​the device is improved, the concentration of the electric field at the bottom of the trench is improved, the breakdown voltage of the device is improved, and the reliability of the device is further improved; the bidirectional IGBT manufacturing method proposed by the present invention It does not need to add additional process steps, and is compatible with the traditional bidirectional IGBT manufacturing method.

A bidirectional trench gate charge storage type IGBT belongs to the technical field of semiconductor power devices. By widening the traditional trench gate structure and adopting the sidewall gate electrode structure to form a mesa structure under the base region and introducing a shielding trench structure, the present invention realizes the symmetrical forward / reverse conduction and turn-off characteristics of the device At the same time, it increases the carrier injection enhancement effect and improves the forward conduction voltage drop V ceon and turn-off loss E off The compromise between; alleviate the electric field concentration effect at the sharp corner of the bottom of the trench, effectively improve the breakdown voltage of the device; reduce the gate capacitance of the device, thereby improving the switching speed of the device, reducing the switching loss of the device and the Requirements for the capability of the gate drive circuit; avoiding the limitation of the doping concentration and thickness of the N-type charge storage layer on the device withstand voltage; reducing the saturation current density and improving the short-circuit safe working area of ​​the device; and effectively inhibiting the device from being turned on EMI effect. In addition, the manufacturing method provided by the present invention is compatible with the traditional CSTBT manufacturing method.

A trench gate charge storage type IGBT device with a clamping structure and a manufacturing method thereof belong to the field of semiconductor power devices. In the present invention, a clamping electrode connected with the emitter metal through a series diode structure is introduced under the gate electrode in the device trench, and a P-type layer connected thereto is arranged under the clamping electrode. The invention can effectively shield the adverse effect of the increase of the doping concentration of the N-type charge storage layer on the withstand voltage performance of the device, overcome the contradiction between the forward conduction and the withstand voltage of the traditional CSTBT structure; reduce the saturation current density of the device, and improve the short circuit of the device Safe working area; increase the switching speed of the device and reduce the switching loss of the device; at the same time, no negative differential capacitance effect will be formed during the dynamic process of turning on, which can effectively avoid current, voltage oscillation and EMI problems during the dynamic process of turning on, and improve the device’s performance. Reliability; improve the electric field concentration effect at the bottom of the trench, and increase the breakdown voltage of the device.

The invention relates to the field of power semiconductors, and provides a high-speed IGBT device with an ultra-low conduction voltage drop, which is used to overcome the high conduction voltage drop, low turn-off speed, and short-circuit safety of the existing slot-gate IGBT with a carrier storage layer. The problem of small working area and large gate drive loss. The IGBT device of the present invention integrates two diodes connected in series on the surface of the silicon wafer to clamp the potential of the P-type electric field shielding layer by using the same process doping, so that the doping concentration of the CSL layer can be increased by 3-4 orders of magnitude; the weight of the CSL layer Doping greatly improves the electron injection efficiency of the IGBT emitter, thereby greatly improving the trade-off relationship between the turn-on voltage drop and turn-off loss of the IGBT at a lower channel density; at the same time, due to the clamping of the diode Bit action, so that the drain near the nMOS channel of the IGBT is clamped at a lower voltage under high voltage and high current, so that the saturation current density of the new IGBT is greatly reduced, thereby improving the short-circuit safe operating area of ​​the IGBT .

A bidirectional trench gate charge storage type IGBT and a manufacturing method thereof belong to the technical field of power semiconductor devices. By reducing the depth of the emitter region extending along the top layer of the base region in the traditional bidirectional trench gate charge storage type IGBT structure, and introducing a split trench gate structure, the split trench gate structure includes the gate electrode and its surrounding gate dielectric layer and The split electrode located at the bottom of the gate electrode and connected with the gate dielectric layer and its surrounding split electrode dielectric layer, the split electrode is equipotential to the emitter metal. The device structure proposed by the present invention improves the overall performance of the device while realizing symmetrical forward / reverse conduction and turn-off characteristics, and can avoid the limitation of the doping concentration and thickness of the charge storage layer on the device withstand voltage, while improving the performance of the device. The short-circuit safe working area of ​​the device, temperature characteristics, the trade-off relationship between the device's forward conduction voltage drop Vceon and the turn-off loss Eoff, avoids the current, voltage oscillation and EMI problems in the dynamic process of device opening, and improves the reliability of the device sex.

The invention belongs to the technical field of power semiconductor devices, and relates to a lateral trench type insulated gate bipolar transistor and a manufacturing method thereof. On the basis of the LIGBT device structure, the present invention adds a carrier storage layer and a vertical groove gate structure, which can enhance the conductance modulation effect and reduce the conduction voltage drop of the device; the channels in the horizontal direction and the longitudinal direction can improve the channel Density, reduce the turn-on voltage drop; wrap the side of the gate with a separate gate connected to the emitter, thereby reducing the Miller capacitance, reducing the turn-off time, reducing the turn-off loss, and improving the forward conduction voltage drop and turn-off loss. At the same time, it can reduce the gate charge of the device and reduce the driving loss; optimize the compromise characteristics of the current drop rate (di / dt) and conduction loss (Eon); the floating area on the left side of the slot gate can be in the forward resistance The break-off withstand voltage increases the blocking voltage, and at the same time allows a higher doping concentration of the carrier storage layer to reduce the on-voltage drop; the thick oxide layer at the bottom of the groove gate can increase the blocking voltage.