The invention provides an
MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate, forming at least one first pressure structure on the surface of the first substrate, and enabling the first pressure structure to comprise a first
electrode layer and a first sacrificial layer from bottom to top, and a first cavity which penetrates through the first sacrificial layer and exposes the first
electrode layer; a second substrate is provided, second pressure structures corresponding to the first pressure structures in number are formed on the surface of the second substrate, and each second pressure structure comprises a second
electrode layer, a second sacrificial layer and a third electrode layer from bottom to top; bonding the first sacrificial layer and the third electrode layer, and removing the second substrate to
expose the second electrode layer; a plurality of first release holes penetrating through the second electrode layer and a second cavity penetrating through the second sacrificial layer and arranged corresponding to the first cavity are formed, the first release holes are exposed out of the second cavity, the first electrode layer and the third electrode layer form a first variable
capacitance structure, and the second electrode layer and the third electrode layer form a second variable
capacitance structure. According to the scheme, the first pressure structure and the second pressure structure are bonded to form the
differential capacitance type
pressure sensor, namely, the first variable
capacitance structure and the second variable capacitance structure are formed, pressure is measured through differential output of the first variable capacitance structure and the second variable capacitance structure, the
measurement precision is higher, and the
measurement precision is higher. And thus, the performance of the
MEMS pressure sensor can be improved.