32results about How to "Improved short-circuit safe operating area" patented technology

The invention belongs to the technical field of power semiconductor devices, and in particular relates to a reverse conduction trench gate charge storage type insulated gate bipolar transistor. The present invention improves the switching of the device in the IGBT working mode by introducing a double-split electrode with the same potential as the emitter and a dielectric layer between the double-split electrode and the gate electrode at the bottom and side surfaces of the gate electrode in the trench of the RC-IGBT device The speed improves the carrier concentration distribution of the entire N-type drift region, reducing the switching loss of the device; reducing the saturation current density of the device, improving the short-circuit safe working area of ​​the device, and improving reliability; When the current diode is in the working mode, the reverse freewheeling diode has a low diode conduction voltage drop, and the reverse recovery characteristics of the freewheeling diode are improved; at the same time, the double split trench gate charge storage type IGBT manufacturing method proposed by the present invention does not Additional process steps are required, which is compatible with traditional RC‑IGBT fabrication methods.

A trench gate charge storage type IGBT belongs to the technical field of semiconductor power devices. By widening the traditional trench gate structure and adopting the sidewall gate electrode structure to form a mesa structure under the base region, and introducing a shielding trench structure that shields the electric field of the charge storage layer, the carrier injection enhancement effect is increased, Improves the forward conduction voltage drop V ceon and turn-off loss E off The compromise between; alleviate the electric field concentration effect at the sharp corner of the bottom of the trench, effectively improve the breakdown voltage of the device; reduce the gate capacitance of the device, especially the Miller capacitance C GC and the gate charge Q G , improve the switching speed of the device, reduce the switching loss of the device and the requirements for the gate drive circuit capability; avoid the limitation of the doping concentration and thickness of the N-type charge storage layer on the device withstand voltage; reduce the saturation current density and improve the The short-circuit safe operating area (SCSOA) of the device; and effectively suppress the EMI effect when the device is turned on. In addition, the manufacturing method provided by the invention is compatible with the traditional trench gate charge storage type IGBT manufacturing method.

The invention belongs to the technical field of power semiconductor devices, and in particular relates to a trench gate charge storage type insulated gate bipolar transistor. In the present invention, by introducing a double split electrode with equal potential to the emitter and a dielectric layer between the double split electrode and the gate electrode at the bottom and side of the gate electrode in the device trench, without affecting the threshold voltage and turn-on of the IGBT device, The gate capacitance is reduced, thereby increasing the switching speed of the device and reducing the switching loss of the device; at the same time, the wide bottom split electrode and floating p-type base region further improve the carrier concentration distribution of the entire N-type drift region, and The short-circuit safe working area and breakdown characteristics of the device are improved, and the performance and reliability of the device are improved. The method for fabricating the double-split trench gate charge storage IGBT proposed by the present invention does not require additional process steps, and is compatible with the conventional CSTBT fabrication method.

A bidirectional IGBT device and a manufacturing method thereof belong to the technical field of power semiconductor devices. The present invention adopts a wide trench width on the front and back of the device and introduces an electrode connected to the metal electrode at the bottom of the gate electrode in the trench, without affecting the threshold voltage and turn-on of the IGBT device. The reverse characteristic improves the forward and reverse switching speed of the bidirectional IGBT device, reduces the switching loss of the device; improves the carrier concentration distribution in the entire N-type drift region, and improves the compromise between the forward conduction voltage drop and switching loss The saturation current density of the device is reduced, the short-circuit safe working area of ​​the device is improved, the concentration of the electric field at the bottom of the trench is improved, the breakdown voltage of the device is improved, and the reliability of the device is further improved; the manufacturing method provided by the invention The trench is filled by two electrode filling processes, the process difficulty is small, and it is compatible with the traditional bidirectional IGBT manufacturing method.

A CSTBT device and a manufacturing method thereof belong to the field of semiconductor power devices. In the present invention, a trench gate structure is formed by introducing a trench split electrode under the gate electrode, a P-type layer is introduced under the trench split electrode, and a series diode structure is arranged above the trench split electrode, which solves the problem of traditional CSTBT devices by increasing the N The doping concentration of the type charge storage layer causes the problem that there is a contradictory relationship between the forward conduction performance and the withstand voltage performance of the device; the saturation current density is reduced, and the short-circuit safe working area of ​​the device is improved; the gate capacitance of the device is reduced, and the device is improved. The switching speed is reduced, the switching loss is reduced, and the switching performance of the device is improved; the electric field concentration effect at the bottom of the trench is improved to increase the breakdown voltage of the device; the carrier enhancement effect of the emitter terminal of the device is improved, and the entire N-drift region is improved The carrier concentration distribution of the present invention further optimizes the compromise characteristics of forward conduction voltage drop and turn-off loss; at the same time, the manufacturing method of the device of the present invention is compatible with the manufacturing process of the existing CSTBT device.

The invention belongs to the technical field of power semiconductor devices, and in particular relates to a trench gate charge storage type insulated gate bipolar transistor. The present invention introduces a double-split electrode with the same potential as the emitter and a dielectric layer between the double-split electrode and the gate electrode at the bottom and side of the gate electrode in the device trench, without affecting the threshold voltage and turn-on of the IGBT device, The gate capacitance is reduced, thereby increasing the switching speed of the device and reducing the switching loss of the device; at the same time, the side split electrode and the floating p-type base region on one side of the side split electrode improve the short-circuit safe working area of ​​the device and the entire N-type The carrier concentration distribution in the drift region improves the performance and reliability of the device. The manufacturing method of the double-split trench gate charge storage type IGBT proposed by the present invention does not need to add additional process steps, and is compatible with the traditional CSTBT manufacturing method.