Trench gate charge storage reverse-conducting insulated-gate bipolar transistor (RC-IGBT) and fabrication method thereof

A technology of charge storage and charge storage layer, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve the compromise characteristics of the conduction voltage drop and switching loss that affect the device, the large forward conduction voltage drop, and the reduction of the device switching speed etc.

Active Publication Date: 2016-08-17
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, for the traditional RC-CSTBT device structure, in the forward IGBT mode, due to the presence of a higher doping concentration and a certain thickness of the N-type charge storage layer, the breakdown voltage of the device is significantly reduced. In order to effectively shield the N-type Adverse effects of the charge storage layer To obtain a certain device withstand voltage, it is necessary to adopt: 1) deep trench gate depth, so that the depth of the trench gate is greater than the junction depth of the N-type charge storage layer, but the deep trench gate depth not only increases The larger gate-emitter capacitance also increases the gate-collector capacitance, thus reducing the switching speed of the device, increasing the switching loss of the device, and affecting the compromise between the conduction voltage drop and switching loss of the device characteristics; 2) The small cell width minimizes the distance between the trench gates. However, the high-density trench

Method used

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  • Trench gate charge storage reverse-conducting insulated-gate bipolar transistor (RC-IGBT) and fabrication method thereof
  • Trench gate charge storage reverse-conducting insulated-gate bipolar transistor (RC-IGBT) and fabrication method thereof
  • Trench gate charge storage reverse-conducting insulated-gate bipolar transistor (RC-IGBT) and fabrication method thereof

Examples

Experimental program
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Embodiment 1

[0043] In this example, a trench gate charge storage type RC-IGBT, its cell structure is as follows figure 2As shown, it includes: the back collector metal 13, the P-type collector region 11 and the N-type collector region 12 located on the back collector metal 13 and connected to it, and the P-type collector region 11 and the N-type collector region The N-type field stop layer 10 above and connected to the N-type field stop layer 10, the N-drift region 9 located on the N-type field stop layer 10 and connected to it; the composite trench structure located in the middle of the upper part of the N-drift region 9 and connected to it; The N-type charge storage layer 8 located on both sides of the upper part of the N-drift region 9 and connected to it, the side wall of the N-type charge storage layer 8 is connected to the side wall of the composite trench structure, located on the upper part of the N-type charge storage layer 8 and The p-type base region 7 connected to it, the sid...

Embodiment 2

[0045] In this example, a trench gate charge storage type RC-IGBT, its cell structure is as follows image 3 As shown, it includes: the back collector metal 13, the P-type collector region 11 and the N-type collector region 12 located on the back collector metal 13 and connected to it, and the P-type collector region 11 and the N-type collector region The N-type field stop layer 10 above and connected to the N-type field stop layer 10, the N-drift region 9 located on the N-type field stop layer 10 and connected to it; the composite trench structure located in the middle of the upper part of the N-drift region 9 and connected to it; The N-type charge storage layer 8 located on both sides of the upper part of the N-drift region 9 and connected to it, the side wall of the N-type charge storage layer 8 is connected to the side wall of the composite trench structure, located on the upper part of the N-type charge storage layer 8 and The p-type base region 7 connected to it, the sid...

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Abstract

The invention belongs to the technical field of a power semiconductor device, in particular relates to a reverse-conducting trench gate charge storage insulated-gate bipolar transistor (IGBT). By introducing a side-surfaces split electrode connected with an emitter into a trench on the condition of a certain device trench depth and a certain trench metal oxide semiconductor (MOS) structure density, the gate capacitance of the device is reduced, the switching speed of the device is increased, the switching loss is reduced, and the positive conduction voltage drop and the average switching loss are improved; meanwhile, the density of an MOS channel is reduced, the short-circuit safety working region of the IGBT is improved, and the performance and the reliability of the device are improved; and a reverse freewheeling diode works in multiple submodes in a working mode of the reverse freewheeling diode, the IGBG has low diode conduction voltage drop, and the reverse recovery characteristic of the freewheeling diode is improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an insulated gate bipolar transistor (IGBT), in particular to a reverse conduction trench gate charge storage type insulated gate bipolar transistor (RC-CSTBT). Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device combining MOS field effect and bipolar transistor. It not only has the advantages of easy driving and simple control of MOSFET, but also has the advantages of low conduction voltage of power transistor, large on-state current and small loss. It has become one of the core electronic components in modern power electronic circuits and is widely used in Various fields of the national economy such as communications, energy, transportation, industry, medicine, household appliances and aerospace. The application of IGBT plays an extremely important role in improving the performance of power electroni...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/66348H01L29/7397
Inventor 张金平底聪田丰境刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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