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102results about How to "High field-effect mobility" patented technology
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Display device
InactiveUS20100065840A1Improve conductivityGuaranteed uptimeTransistorSolid-state devicesJunction leakageLinear element
A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
Owner:SEMICON ENERGY LAB CO LTD
Display device
ActiveUS20100065839A1Suitable structureAvoid defectsSolid-state devicesNon-linear opticsJunction leakageLinear element
A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
Owner:SEMICON ENERGY LAB CO LTD
Organic electroluminescent display device
InactiveUS20100117999A1High field-effect mobilityHigh on-off ratioElectroluminescent light sourcesSolid-state devicesOrganic electroluminescenceEngineering
An organic electroluminescent display device includes at least a driving TFT and pixels which are formed by organic electroluminescent elements and are provided on a substrate of the TFT. The driving TFT includes at least a substrate, a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode. The driving TFT further includes a resistive layer between the active layer and at least one of the source electrode and the drain electrode. The pixels include at least one color-modified pixel which has a color filter that modifies the emission color of the color-modified pixel, and which emits light of the modified color.
Owner:UDC IRELAND
Method for manufacturing semiconductor device
ActiveUS20110156026A1High field-effect mobilitySufficient performanceSolid-state devicesSemiconductor/solid-state device manufacturingDisplay deviceSingle crystal
A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20130334533A1Improve reliabilityHigh field-effect mobilityTransistorOxide semiconductorCharge carrier
A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which carriers flow is separated from the gate insulating film is employed. Specifically, an oxide semiconductor layer having high conductivity is provided between two oxide semiconductor layers. Further, an impurity element is added to the oxide semiconductor layer in a self-aligned manner so that the resistance of a region in contact with an electrode layer is reduced. Further, the oxide semiconductor layer in contact with the gate insulating layer has a larger thickness than the oxide semiconductor layer having high conductivity.
Owner:SEMICON ENERGY LAB CO LTD
Method for manufacturing semiconductor device
ActiveUS8236635B2High field-effect mobilityThin film transistorTransistorSolid-state devicesLight exposureSemiconductor
In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by dry etching in which an etching gas is used.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20100117078A1Easy to makeHigh field-effect mobilityTransistorSolid-state devicesDevice materialSemiconductor
An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
Owner:SEMICON ENERGY LAB CO LTD
Method for manufacturing semiconductor device
ActiveUS8343799B2High field-effect mobilityThin film transistorElectroluminescent light sourcesSolid-state devicesProduction rateDevice material
An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-stagger thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by wet etching in which an etching solution is used.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
InactiveUS20130320330A1High field-effect mobilityHigh filed-effect mobilityTransistorPower semiconductor deviceIndium
In order to form a structure in which an oxide semiconductor layer through which a carrier flows is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which a carrier flows is away from the gate insulating film containing silicon is provided. Specifically, a buffer layer is provided between the gate insulating film and the oxide semiconductor layer. Both the oxide semiconductor layer and the buffer layer are formed using materials containing indium and another metal element. The composition of indium with respect to gallium contained in the oxide semiconductor layer is higher than the composition of indium with respect to gallium contained in the buffer layer. The buffer layer has a smaller thickness than the oxide semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
Display device
InactiveUS20100072470A1Improve conductivityGuaranteed uptimeTransistorSolid-state devicesJunction leakageLinear element
A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
Display device
ActiveUS20100072471A1Improve conductivityGuaranteed uptimeTransistorElectroluminescent light sourcesJunction leakageLinear element
A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
Owner:SEMICON ENERGY LAB CO LTD
Display device
ActiveUS8368066B2High field-effect mobilitySimple manufacturing processTransistorSolid-state devicesLinear elementScan line
A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Display device
ActiveUS20100084654A1Small sizeReduce contact resistanceTransistorSolid-state devicesScan lineLinear element
In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Display device
ActiveUS7989815B2High field-effect mobilitySimple manufacturing processTransistorElectroluminescent light sourcesScan lineLinear element
The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
InactiveUS8058647B2Easy to makeHigh field-effect mobilityTransistorSolid-state devicesSemiconductorSemiconductor device
Owner:SEMICON ENERGY LAB CO LTD
Method for manufacturing semiconductor device
ActiveUS20100105164A1Low costImprove productivityElectroluminescent light sourcesSolid-state devicesProduction rateDevice material
An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-stagger thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by wet etching in which an etching solution is used.
Owner:SEMICON ENERGY LAB CO LTD
Display device
ActiveUS20100084652A1Small sizeReduced footprintSolid-state devicesNon-linear opticsScan lineLinear element
A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Element substrate and a light emitting device
InactiveUS7173586B2High field-effect mobilityHigh currentElectroluminescent light sourcesSolid-state devicesLinear regionScan line
A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a driving transistor also serves as an erasing transistor and the driving transistor is operated in a saturation region. The gate of the driving transistor is connected to an erasing scan line and it can be selected whether or not to flow current by a potential of the erasing scan line. In addition, a current controlling transistor which operates in a linear region is connected in series to the driving transistor, thus a video signal transmitting a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.
Owner:SEMICON ENERGY LAB CO LTD
Method for manufacturing semiconductor device
ActiveUS20100105162A1High field-effect mobilityThin film transistorTransistorSolid-state devicesLight exposureSemiconductor
In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by dry etching in which an etching gas is used.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and semiconductor device producing system
InactiveUS7115903B2High field-effect mobilityEasy to operateTransistorSolid-state devicesStress concentrationLaser light
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.
Owner:SEMICON ENERGY LAB CO LTD
Element substrate and light emitting device
InactiveUS7141934B2Increase storage capacityReduce variationTransistorElectroluminescent light sourcesLinear regionEngineering
A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
ActiveUS20100163866A1Easy to makeSolve the lack of reliabilityTransistorElectroluminescent light sourcesSemiconductor packageContact resistance
One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers.
Owner:SEMICON ENERGY LAB CO LTD
Display device and electronic device including the same
ActiveUS20120012847A1High field-effect mobilityReduced shutdown currentStatic indicating devicesSolid-state devicesDriver circuitDisplay device
One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.
Owner:SEMICON ENERGY LAB CO LTD
Electrically conducting organic compound and electronic device
InactiveUS6940092B2Impairing high field effect mobilityImprove mobilityTransistorOrganic chemistryPolycyclic compoundSolvent
An electrically conducting organic compound comprising a condensed polycyclic aromatic compound containing from 8 to 14 condensed rings and being solubilized in a solvent by the introduction of a functional group into any condensed ring of the compound. The electrically conducting organic compound is used as a constituent element in the production of electronic devices.
Owner:FUJIFILM CORP
Display device
ActiveUS8389988B2High field-effect mobilitySimple manufacturing processSolid-state devicesSemiconductor/solid-state device manufacturingScan lineLinear element
In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Element substrate and light emitting device
ActiveUS7358942B2Increase storage capacityReduce variationStatic indicating devicesElectric circuit arrangementsLinear regionScan line
A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.
Owner:SEMICON ENERGY LAB CO LTD
Acceleration Sensor
InactiveUS20080087083A1Improve structural strengthEasy to detectAcceleration measurement using interia forcesInertial effectAcceleration Unit
An acceleration sensor having a vibrating body includes: a base fixed to a pedestal; an oscillating arm extended from the base in a beam-like shape, oscillating transversally in a planer direction at a predetermined resonant frequency. Here, the oscillating arm includes: an oscillating block defined by a through hole opened through a thickness direction at a widthwise center of the oscillating arm, the through hole extending in a lengthwise direction thereof; an added mass being a junction of a distal end of the oscillating block defined by the through hole; and an excitation means installed on the oscillating arm. At this time, the oscillating arm is supported by the base and by the added mass, either in a pseudo-dual anchor structure or a single anchor structure. With the above configuration, the acceleration sensor detects a resonant frequency variability of the vibrating body caused by an inertial effect of the added mass under acceleration.
Owner:138 EAST LCD ADVANCEMENTS LTD
Display device
ActiveUS20100084653A1Small sizeReduce contact resistanceTransistorElectroluminescent light sourcesScan lineLinear element
The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.
Owner:SEMICON ENERGY LAB CO LTD
Element substrate and light emitting device
InactiveUS7122969B2High field-effect mobilityLarge amountElectroluminescent light sourcesSolid-state devicesLinear regionEngineering
No need of lowering off-current of a switching transistor, fewer luminance variations of a light emitting element between pixels due to characteristic variations of a driving transistor, and less risk of steps due to increase in the number of wirings. A video signal for light emission or non-emission of a pixel is input to a gate of a current controlling transistor operated in a linear region, which is connected in series with the driving transistor, through a switching transistor. Since a voltage Vds between a source and a drain of the current controlling transistor is small, small changes in a voltage Vgs between a gate and a source thereof do not affect a current flowing in a load. The current flowing in the light emitting element is determined by the driving transistor operated in a saturation region, and a fixed potential is input to the gate thereof during light emission.
Owner:SEMICON ENERGY LAB CO LTD
Thin film transistor
ActiveUS20100244034A1High field-effect mobilityLarge currentTransistorSolid-state devicesPhysicsExtrinsic semiconductor
A thin film transistor includes a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided over the gate insulating layer to overlap with the gate electrode; an impurity semiconductor layer which is partly provided over the semiconductor layer and which forms a source region and a drain region; and a wiring layer which is provided over the impurity semiconductor layer, where a width of the source region and the drain region is narrower than a width of the semiconductor layer, and where the width of the semiconductor layer is increased at least in a portion between the source region and the drain region.
Owner:SEMICON ENERGY LAB CO LTD
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