127results about How to "Large current" patented technology

An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

Methods and devices are disclosed for electrostatically generating electrical energy in response to state changes of external energy sources. In a simple embodiment, a first diode directs priming current from a first rechargeable battery into a variable capacitor means when the latter means is in a charge desorbed mode (charge absorbing mode). An external energy source switches the variable capacitor means into a charge expelling mode while absorbed charge is trapped in the variable capacitor means. After a predefined increase in voltage is realized, a second diode directs expelled charge from the variable capacitor means to a series circuit composed of a profit-charge storing means (e.g. a second rechargeable battery) and the first rechargeable battery, thereby returning the invested charge back to the donor (the first rechargeable battery) and causing a profit amount of charge to be stored in the profit-charge storing means (the second rechargeable battery). The variable capacitor means may take on many forms including those which switch between their charge absorbing and charge expelling modes in response to thermal agitation. Various forms of nonelectrical energy sources and ways for electrostatically converting their energies into electrical energy are disclosed.

A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.

A power tool (1; 90) includes a motor (17) having a stator (18) and a rotor (19). The stator (18) includes front and rear insulators (21, 22) respectively disposed forward and rearward of a stator core (20) in an axial direction thereof. At least six coils (23) are respectively wound on the stator (18) such that the coils (23) are wound through the front and rear insulators (21, 22). Winding wires (23a) respectively electrically connect circumferentially-adjacent pairs of the coils (23). A short circuiting device (25) short circuits respective pairs of windings (23a) that are located diagonally or diametrically across from one another.

A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.

The present invention relates to a complex superconducting fault current limiter which adds a current limiting reactor to a superconductor to protect the power line from a fault current, and more particularly, to a complex superconducting fault current limiter using a minimum number of superconducting fault current limiters, while avoiding series and parallel connections of a plurality of superconductors and coils, in order to economically manufacture the fault current limiter in a small size. A superconductor, a high speed switch, and a circuit breaker are connected in series to each other, and a first reactor with a low impedance and a second reactor with a high impedance are connected in parallel to the power line so as to provide a branch circuit for the current to the series circuit. A semiconductor switch is connected in parallel to the second reactor with a high impedance in accordance with the opening high speed switch. A circuit is breaker trip drive controller is configured so as to be connected to the superconductor and the branch circuit, and when a fault current occurs, the fault current is branched into the branch circuit, so that the second reactor limits the fault current. When a fault current occurs, the circuit breaker trip drive controller provides a trip drive signal to the circuit breaker for tripping in accordance with the voltage of the superconductor or the current of the branch circuit.

An ECU calculates an evaluation value decrease amount D(−) in response to a reduction of unevenness of lithium ion concentration caused by diffusion of lithium ions resulting from a lapse of one cycle time ΔT, calculates an evaluation value increase amount D(+) in response to an increase of the unevenness of the lithium ion concentration caused by discharging during a lapse of one cycle time ΔT, and calculates a present value D(N) of a battery deterioration evaluation value D due to high-rate discharging, as a previous value D(N−1)−evaluation value decrease amount D(−)+evaluation value increase amount D(+). If battery deterioration evaluation value D exceeds a predetermined target value E, the ECU sets a discharging power limit value WOUT that is a limit value of electric power to be discharged from a battery, to a value lower than a maximum value W(MAX).

The invention provides an overall cooling charging device for an electrical vehicle. The overall cooling charging device comprises a power supply side connector (100) and a vehicle side connector (200), and the power supply side connector (100) is connected with a charging cable (300) and comprises a first box (101) which comprises a magnetic coupling convex part (111), a first iron core vertical plate side cooling part (110) and a first coupling end face (112); the vehicle side connector comprises a second box (201) which comprises a magnetic coupling concave part (211), a circumferential cooling part (209), a second iron core vertical plate side cooling part (210) and a second coupling end face (212); the charging cable (300) comprises a cable core (302) and a cable cooling water channel (301) surrounding the periphery of the cable core; water entry of the cable cooling water channel (301) is communicated with that of the first iron core vertical plate side cooling part (110); the power supply side connector (100) is suitable for forming end face coupling while forming electromagnetic coupling with the vehicle side connector. The overall cooling charging device communicates the cable, the power supply side connector and the vehicle side connector into the overall cooling channel, and control over working temperature of the charging device is greatly enhanced.

A low-voltage nonvolatile memory array includes an N type semiconductor substrate having a memory region. A deep P well is formed in the semiconductor substrate. A cell N well is located within the memory region in the semiconductor substrate. The cell N well is situated above the deep ion well. A shallow P well serving as a buried bit line is doped within the cell ion well. The shallow P well is isolated by an STI layer, wherein the STI layer has a thickness greater than a well depth of the shallow ion well. At least one memory transistor with a stacked gate, a source, and a drain is formed on the shallow ion well. The source of the memory transistor is electrically coupled to the cell N well to induce a capacitor between the cell N well and the deep P well during a read operation, thereby avoiding read current bounce or potential power crash. A bit line overlies the memory transistor and is electrically connected to the drain of the memory transistor via a bit line contact plug short-circuiting the drain of the memory transistor and the shallow P well.

A metal hexaboride nanowire such as LaB6 with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

In a CMOS type SRAM device having a 6-transistor configuration, only a drive transistor and an access transistor of one unit circuit are designed with a larger size, with the other four transistors having a smaller size.

A thin film transistor includes a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided over the gate insulating layer to overlap with the gate electrode; an impurity semiconductor layer which is partly provided over the semiconductor layer and which forms a source region and a drain region; and a wiring layer which is provided over the impurity semiconductor layer, where a width of the source region and the drain region is narrower than a width of the semiconductor layer, and where the width of the semiconductor layer is increased at least in a portion between the source region and the drain region.

A fault arc detection method includes: sampling an instantaneous current value of a circuit; using the instantaneous current value to predict a current peak value and, when the predicted current peak value is greater than a predetermined threshold, determining that a first energy fault arc is to appear; and comparing a time domain or frequency domain feature of the instantaneous current value with a reference time domain feature or a reference frequency domain feature of the current of a fault arc of the circuit. When the similarity between the time domain or frequency domain feature and the reference time or reference frequency domain feature of the current of the fault arc reaches a predetermined range, a second energy fault arc is determined to appear. The method and detection device detect the occurrence of a fault arc early and they are able to distinguish different types of fault arcs.

In a module substrate, a plurality of terminal connection substrates each including an insulator and a plurality of columnar terminal electrodes arranged on a single lateral surface or both lateral surfaces of the insulator is mounted on a single side of a composite substrate such that at least one of the terminal connection substrates extends over a border between a plurality of neighboring module substrates. The composite substrate, in which the plurality of terminal connection substrates is mounted on the single side and a plurality of electronic components is mounted on at least the single side, is divided at a location where the module substrates are to be cut from the composite substrate.

A busbar includes a first busbar component as a busbar body and a second busbar component connected thereto. The first busbar component is made of an electrically-conductive metal material having superior spring property. The first busbar component includes a male-terminal-connecting portion for clamping a male terminal of a device and a power input part provided upstream of the male-terminal-connecting portion. The second busbar component is made of an electrically-conductive metal material having electrical conductivity superior to that of the first busbar component. The second busbar component is connected to the first busbar component via a first section of the second busbar component in register with the power input part of the first busbar component and a second section of the second busbar component in register with a portion of the first busbar component, the portion being upstream of the male-terminal-connecting portion at which the current is divided.

An induction heating type of fixing device to fix a recording material having a toner image thereon, having a heating member, an induction coil divided into a plurality of parts, a temperature detector for detecting a temperature of the heating member, a signal generator for generating a switching signal that periodically controls permission and prohibition of energization of each of the divided induction coils, and a controller for controlling supply of a driving current to each of the divided induction coils to heat the heating member. The controller controls the energization by periodically switching the driving current to each of the divided induction coils on the basis of an energization signal that determines the permission and the inhibition of the driving currents according to a signal of temperature detected by the temperature detector, and the switching signal.

The invention discloses a paralleling model semi-active vibration isolator. The vibration isolator is characterized in that a cylindrical upper shell is arranged, a rubber main spring is plugged in a top end opening of the upper shell, a main spring framework penetrates through the rubber main spring and is provided with an upper connection stud and a lower connection stud, the upper connection stud is connected with a main vibrating object, the lower connection stud is connected with a column-shaped iron core where an excitation coil is wound, the column-shaped iron core is supported in a magnetism conduction sleeve through a cutting magnetorheological elastomer arranged on the outer circumference of the column-shaped iron core, the two ends of the magnetorheological elastomer are extruded to be connected with the top of a T-shaped support and the bottom end of the iron core, and the T-shaped support penetrates through the magnetism conduction sleeve and is fixedly connected; the upper shell is connected with a lower shell, the lower end of the T-shaped support is fixedly connected with the lower shell, and the bottom of the lower shell is provided with a connection bolt used for being connected with a basal body. By means of the vibration isolator, vibrating energy transmitted by a rotary machine to the basal body can be effectively reduced, vibration of relative parts of the rotary machine is reduced, and the service life of the rotary machine and a system of the rotary machine is prolonged.

A control unit for a vehicle is configured to control a power-generating unit such that electric power generated by the power-generating unit becomes smaller than that generated when a voltage between terminals of a smoothing capacitor is equal to or larger than an output voltage of a battery, when all of conditions i)-iii) are satisfied, where i) an external power supply unit supplies electric power to the outside in a condition where a shift lever is placed in a parking position, ii) after an amount of electric power stored in the battery is reduced to be smaller than a predetermined power storage amount in a condition where a relay is switched OFF, the relay is operated switch ON, and electric power is generated by the power-generating unit, and iii) the voltage between the terminals of the smoothing capacitor is smaller than the output voltage of the battery.

A SiC junction barrier controlled Schottky rectifier includes a SiC substrate, a n-type drift layer, a p-type doping region, a plurality of junction field-effect regions, a first metal layer and a second metal layer. The drift layer is disposed on the SiC substrate. The junction field-effect regions are disposed in the drift layer and are surrounded by the p-type doping region. The first metal layer is disposed on the drift layer. The second metal layer is disposed at one side of the SiC substrate away from the drift layer. Through N circular regions and (N−1) inter-circle regions each connecting two of the circular regions, as well as geometric characteristics of the circular regions and the inter-circle regions, a leakage current of devices is effectively reduced and ruggedness is increased to improve an issue of a large leakage current of a conventional Schottky barrier diode.

A capacitor uses niobium pentoxide in the manufacture of a semiconductor device. The niobium pentoxide has a low crystallization temperature of 600° C. that provides control over the oxidation of the bottom electrode during heat-treatment. A dielectric constituent present as an amorphous oxide along the grain boundaries of polycrystalline niobium pentoxide is used for a capacitor insulator., thereby providing a method to decrease the leakage current along the grain boundary of niobium pentoxide and to realize a high dielectric constant and low-temperature crystallization.

A noise filter is assembled to an electric power conversion device and has a metal housing casing and two capacitors connected to an external terminal of the device through which an electric power conversion circuit is connected to an external device. The two capacitors, the housing casing and the external terminal make a current loop. A magnetic flux of an alternating magnetic field generated in a part of the electric power conversion circuit penetrates in a first area and a second area formed in the current loop. A first induced noise current is induced in the current loop when the magnetic flux of the generated magnetic field penetrates in the first area. A second induced noise current is induced in the current loop when the magnetic flux penetrates in the second area so that the first induced noise current flows in a reverse direction to the second induced noise current.

A DC-to-DC converter includes two or more inductors coupled to a common core and two or more active switches, where at least one active switch is in an input current path. A controller operates the two or more active switches such that a DC input is driven through one or more of the two or more inductors to implement a power conversion operation.

The invention relates to a device for compensating influence of temperature on a resonator circuit. The device comprises a resonator circuit and a supply unit for supplying an electric bias signal to the resonator circuit, wherein the supply unit is adapted for adjusting the electric bias signal for compensating influence of temperature on the resonator circuit.

A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.

A bias control circuit for controlling a bias circuit coupled to an amplifier transistor. The bias control circuit receives a control voltage, and actively adjusts an equivalent resistance of the bias control circuit responsive to the control voltage, wherein the equivalent resistance is established between a first node and a reference voltage. In one embodiment, when the control voltage is increased, the equivalent resistance is gradually decreased and a current drawn by the bias control circuit is gradually increased, resulting in a quiescent current of the amplifier transistor being gradually increased.

During charging of a battery, the start-up of the main body of an apparatus due to the switching on of a controller leads to increased consumption of power and also leads to heating of the battery, and therefore it is not possible to pass a sufficient charging current. A main microcomputer 5 serving as a main control apparatus, a charging IC 2 that performs charging of a battery 6, and a charging microcomputer 3 are provided. The charging microcomputer 3 monitors the operation of the main microcomputer 5, and the charging microcomputer 3 prohibits the charging operation by the charging IC 2 if the main microcomputer 5 is operating, and permits the charging operation by the charging IC 2 if the main microcomputer 5 is not operating.

An electrical connector assembly is provided with an insulating housing, a PCB, and an FFC. The insulating housing includes a plurality of terminals. The FFC and the terminals are electrically connected together by the PCB. The PCB is vertically secured to a rear end of the insulating housing. A plurality of contacts of the PCB are provided on a rear surface of the PCB.

An electrical connector assembly is provided with an insulating housing, a PCB, and an FFC. The insulating housing includes a plurality of terminals and two side extensions The FFC and the terminals are electrically connected together by the PCB. A plurality of contacts of the PCB are provided on a top surface of the PCB. A space is defined by the extensions and two rearward inclined members on both sides of the insulating housing respectively with each rearward inclined member joining the insulating housing and the extension. The PCB is disposed in the space.

An inverter control device for controlling a rotating electric machine drive device that drives an alternating current rotating electric machine and includes an inverter and a DC link capacitor, the inverter being connected to a DC power supply via a contactor, being connected to the rotating electric machine, and performing power conversion between direct current and three-phase alternating current, the DC link capacitor smoothing a DC link voltage, which is a DC-side voltage of the inverter, and the inverter control device performing switching control on switching elements that form the inverter.

A field-effect transistor includes a channel layer formed of a III-V compound semiconductor excluding aluminum; a gate contact layer formed of a III-V compound semiconductor and provided on the channel layer, the III-V compound semiconductor having a dopant concentration equal to or less than 1×1016 cm−3, containing aluminum, and having a large band gap energy; a gate buried layer of a III-V compound semiconductor and provided on the gate contact layer; and a gate electrode buried in the gate buried layer and in contact with the gate contact layer. A recess in the gate buried layer is opposed to an upper side wall of the gate electrode with a gap therebetween and a part of the gate buried layer, and where a contact with a lower side wall of the gate electrode is established, part of the gate buried layer remains without being removed.