120results about How to "Large current" patented technology

Methods and devices are disclosed for electrostatically generating electrical energy in response to state changes of external energy sources. In a simple embodiment, a first diode directs priming current from a first rechargeable battery into a variable capacitor means when the latter means is in a charge desorbed mode (charge absorbing mode). An external energy source switches the variable capacitor means into a charge expelling mode while absorbed charge is trapped in the variable capacitor means. After a predefined increase in voltage is realized, a second diode directs expelled charge from the variable capacitor means to a series circuit composed of a profit-charge storing means (e.g. a second rechargeable battery) and the first rechargeable battery, thereby returning the invested charge back to the donor (the first rechargeable battery) and causing a profit amount of charge to be stored in the profit-charge storing means (the second rechargeable battery). The variable capacitor means may take on many forms including those which switch between their charge absorbing and charge expelling modes in response to thermal agitation. Various forms of nonelectrical energy sources and ways for electrostatically converting their energies into electrical energy are disclosed.

A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.

A power tool (1; 90) includes a motor (17) having a stator (18) and a rotor (19). The stator (18) includes front and rear insulators (21, 22) respectively disposed forward and rearward of a stator core (20) in an axial direction thereof. At least six coils (23) are respectively wound on the stator (18) such that the coils (23) are wound through the front and rear insulators (21, 22). Winding wires (23a) respectively electrically connect circumferentially-adjacent pairs of the coils (23). A short circuiting device (25) short circuits respective pairs of windings (23a) that are located diagonally or diametrically across from one another.

A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.

The present invention relates to a complex superconducting fault current limiter which adds a current limiting reactor to a superconductor to protect the power line from a fault current, and more particularly, to a complex superconducting fault current limiter using a minimum number of superconducting fault current limiters, while avoiding series and parallel connections of a plurality of superconductors and coils, in order to economically manufacture the fault current limiter in a small size. A superconductor, a high speed switch, and a circuit breaker are connected in series to each other, and a first reactor with a low impedance and a second reactor with a high impedance are connected in parallel to the power line so as to provide a branch circuit for the current to the series circuit. A semiconductor switch is connected in parallel to the second reactor with a high impedance in accordance with the opening high speed switch. A circuit is breaker trip drive controller is configured so as to be connected to the superconductor and the branch circuit, and when a fault current occurs, the fault current is branched into the branch circuit, so that the second reactor limits the fault current. When a fault current occurs, the circuit breaker trip drive controller provides a trip drive signal to the circuit breaker for tripping in accordance with the voltage of the superconductor or the current of the branch circuit.

An ECU calculates an evaluation value decrease amount D(−) in response to a reduction of unevenness of lithium ion concentration caused by diffusion of lithium ions resulting from a lapse of one cycle time ΔT, calculates an evaluation value increase amount D(+) in response to an increase of the unevenness of the lithium ion concentration caused by discharging during a lapse of one cycle time ΔT, and calculates a present value D(N) of a battery deterioration evaluation value D due to high-rate discharging, as a previous value D(N−1)−evaluation value decrease amount D(−)+evaluation value increase amount D(+). If battery deterioration evaluation value D exceeds a predetermined target value E, the ECU sets a discharging power limit value WOUT that is a limit value of electric power to be discharged from a battery, to a value lower than a maximum value W(MAX).

The invention provides an overall cooling charging device for an electrical vehicle. The overall cooling charging device comprises a power supply side connector (100) and a vehicle side connector (200), and the power supply side connector (100) is connected with a charging cable (300) and comprises a first box (101) which comprises a magnetic coupling convex part (111), a first iron core vertical plate side cooling part (110) and a first coupling end face (112); the vehicle side connector comprises a second box (201) which comprises a magnetic coupling concave part (211), a circumferential cooling part (209), a second iron core vertical plate side cooling part (210) and a second coupling end face (212); the charging cable (300) comprises a cable core (302) and a cable cooling water channel (301) surrounding the periphery of the cable core; water entry of the cable cooling water channel (301) is communicated with that of the first iron core vertical plate side cooling part (110); the power supply side connector (100) is suitable for forming end face coupling while forming electromagnetic coupling with the vehicle side connector. The overall cooling charging device communicates the cable, the power supply side connector and the vehicle side connector into the overall cooling channel, and control over working temperature of the charging device is greatly enhanced.

A metal hexaboride nanowire such as LaB₆ with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

In a CMOS type SRAM device having a 6-transistor configuration, only a drive transistor and an access transistor of one unit circuit are designed with a larger size, with the other four transistors having a smaller size.

A thin film transistor includes a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided over the gate insulating layer to overlap with the gate electrode; an impurity semiconductor layer which is partly provided over the semiconductor layer and which forms a source region and a drain region; and a wiring layer which is provided over the impurity semiconductor layer, where a width of the source region and the drain region is narrower than a width of the semiconductor layer, and where the width of the semiconductor layer is increased at least in a portion between the source region and the drain region.

In a module substrate, a plurality of terminal connection substrates each including an insulator and a plurality of columnar terminal electrodes arranged on a single lateral surface or both lateral surfaces of the insulator is mounted on a single side of a composite substrate such that at least one of the terminal connection substrates extends over a border between a plurality of neighboring module substrates. The composite substrate, in which the plurality of terminal connection substrates is mounted on the single side and a plurality of electronic components is mounted on at least the single side, is divided at a location where the module substrates are to be cut from the composite substrate.

An induction heating type of fixing device to fix a recording material having a toner image thereon, having a heating member, an induction coil divided into a plurality of parts, a temperature detector for detecting a temperature of the heating member, a signal generator for generating a switching signal that periodically controls permission and prohibition of energization of each of the divided induction coils, and a controller for controlling supply of a driving current to each of the divided induction coils to heat the heating member. The controller controls the energization by periodically switching the driving current to each of the divided induction coils on the basis of an energization signal that determines the permission and the inhibition of the driving currents according to a signal of temperature detected by the temperature detector, and the switching signal.

The invention discloses a paralleling model semi-active vibration isolator. The vibration isolator is characterized in that a cylindrical upper shell is arranged, a rubber main spring is plugged in a top end opening of the upper shell, a main spring framework penetrates through the rubber main spring and is provided with an upper connection stud and a lower connection stud, the upper connection stud is connected with a main vibrating object, the lower connection stud is connected with a column-shaped iron core where an excitation coil is wound, the column-shaped iron core is supported in a magnetism conduction sleeve through a cutting magnetorheological elastomer arranged on the outer circumference of the column-shaped iron core, the two ends of the magnetorheological elastomer are extruded to be connected with the top of a T-shaped support and the bottom end of the iron core, and the T-shaped support penetrates through the magnetism conduction sleeve and is fixedly connected; the upper shell is connected with a lower shell, the lower end of the T-shaped support is fixedly connected with the lower shell, and the bottom of the lower shell is provided with a connection bolt used for being connected with a basal body. By means of the vibration isolator, vibrating energy transmitted by a rotary machine to the basal body can be effectively reduced, vibration of relative parts of the rotary machine is reduced, and the service life of the rotary machine and a system of the rotary machine is prolonged.

A control unit for a vehicle is configured to control a power-generating unit such that electric power generated by the power-generating unit becomes smaller than that generated when a voltage between terminals of a smoothing capacitor is equal to or larger than an output voltage of a battery, when all of conditions i)-iii) are satisfied, where i) an external power supply unit supplies electric power to the outside in a condition where a shift lever is placed in a parking position, ii) after an amount of electric power stored in the battery is reduced to be smaller than a predetermined power storage amount in a condition where a relay is switched OFF, the relay is operated switch ON, and electric power is generated by the power-generating unit, and iii) the voltage between the terminals of the smoothing capacitor is smaller than the output voltage of the battery.

A SiC junction barrier controlled Schottky rectifier includes a SiC substrate, a n-type drift layer, a p-type doping region, a plurality of junction field-effect regions, a first metal layer and a second metal layer. The drift layer is disposed on the SiC substrate. The junction field-effect regions are disposed in the drift layer and are surrounded by the p-type doping region. The first metal layer is disposed on the drift layer. The second metal layer is disposed at one side of the SiC substrate away from the drift layer. Through N circular regions and (N−1) inter-circle regions each connecting two of the circular regions, as well as geometric characteristics of the circular regions and the inter-circle regions, a leakage current of devices is effectively reduced and ruggedness is increased to improve an issue of a large leakage current of a conventional Schottky barrier diode.

A capacitor uses niobium pentoxide in the manufacture of a semiconductor device. The niobium pentoxide has a low crystallization temperature of 600° C. that provides control over the oxidation of the bottom electrode during heat-treatment. A dielectric constituent present as an amorphous oxide along the grain boundaries of polycrystalline niobium pentoxide is used for a capacitor insulator., thereby providing a method to decrease the leakage current along the grain boundary of niobium pentoxide and to realize a high dielectric constant and low-temperature crystallization.

A noise filter is assembled to an electric power conversion device and has a metal housing casing and two capacitors connected to an external terminal of the device through which an electric power conversion circuit is connected to an external device. The two capacitors, the housing casing and the external terminal make a current loop. A magnetic flux of an alternating magnetic field generated in a part of the electric power conversion circuit penetrates in a first area and a second area formed in the current loop. A first induced noise current is induced in the current loop when the magnetic flux of the generated magnetic field penetrates in the first area. A second induced noise current is induced in the current loop when the magnetic flux penetrates in the second area so that the first induced noise current flows in a reverse direction to the second induced noise current.

A DC-to-DC converter includes two or more inductors coupled to a common core and two or more active switches, where at least one active switch is in an input current path. A controller operates the two or more active switches such that a DC input is driven through one or more of the two or more inductors to implement a power conversion operation.

During charging of a battery, the start-up of the main body of an apparatus due to the switching on of a controller leads to increased consumption of power and also leads to heating of the battery, and therefore it is not possible to pass a sufficient charging current. A main microcomputer 5 serving as a main control apparatus, a charging IC 2 that performs charging of a battery 6, and a charging microcomputer 3 are provided. The charging microcomputer 3 monitors the operation of the main microcomputer 5, and the charging microcomputer 3 prohibits the charging operation by the charging IC 2 if the main microcomputer 5 is operating, and permits the charging operation by the charging IC 2 if the main microcomputer 5 is not operating.

A field-effect transistor includes a channel layer formed of a III-V compound semiconductor excluding aluminum; a gate contact layer formed of a III-V compound semiconductor and provided on the channel layer, the III-V compound semiconductor having a dopant concentration equal to or less than 1×10¹⁶ cm⁻³, containing aluminum, and having a large band gap energy; a gate buried layer of a III-V compound semiconductor and provided on the gate contact layer; and a gate electrode buried in the gate buried layer and in contact with the gate contact layer. A recess in the gate buried layer is opposed to an upper side wall of the gate electrode with a gap therebetween and a part of the gate buried layer, and where a contact with a lower side wall of the gate electrode is established, part of the gate buried layer remains without being removed.

A rack server device includes a plurality of servers and at least one control board of rack server device. Each of the servers includes a baseboard management controller (BMC). The BMC is operable to receive a power-on controlling signal so that the BMC can turn on the server. The control board of rack server device is connected to the servers through a management network and outputs the power-on controlling signal based on an input command. The control board of rack server device outputs the power-on controlling signal to the BMC of one of the servers so that the BMC turns on the server.

A system for current efficient dynamic power range control in a transmitter lineup (10) can include a switched mixer (18) coupled to a switched step attenuator (20) and a switched power driver (22) coupled to the switched step attenuator. Linearity and efficiency can be substantially maintained for more than 70 dB of dynamic power range for the system. The dynamic power range control can all occur within the radio frequency range and current can be dynamically switched along with the output power. The transmitter can allow for over 30 dB of continuous power control and over 45 dB of discrete power control. The switched power driver can further include continuous power control via a stacked current steer (202) and stepped power control via a current switched IQ summer amplifier (204, 206, 208, 209, 214, 216, 218, 219) where the steered current switched IQ summer amplifier can provide over 60 dB power control range.

A open-circuit protection circuit of a constant current driving circuit for light emitting diodes is disclosed, which includes that: a transformer (Ta1), which has at least one secondary winding (WT1), is connected to at least two load branches (A1,A2); a commutating loop is composed of each load branches (A1, A2) and one secondary winding (WT1), wherein the secondary winding (WT1) has tap ends; a current sharing transformer (T1) is set in two neighbor load branch (A1, A2); each load branch (A1, A2) is separately connected to one open-circuit protection module (10). The open circuit protection module (10) includes: a detection control unit (101), used for outputting a control signal to a processing unit (102) when the detection control unit detects that the output voltages of each load branch (A1, A2) or the voltages proportionate to the output voltages are not less than a corresponding preset threshold; the processing unit (102), used for shorting one secondary sub winding (WT11, WT12) in the corresponding load branch (A1, A2) and a sharing current winding (W1) of the current sharing transformer (T1) in series with the secondary sub winding (WT11, WT12) when receiving the control signal. With the embodiments of the present invention, the cost and the bulk of the current sharing transformer (T1) can be reduced.

An object of the present invention is to provide an electrode for a lithium ion secondary battery that can ensure a high level of safety even when exposed to severe conditions such as a nail penetration test or crush test, and exhibit excellent output characteristics.

The present invention relates to an electrode for a lithium ion secondary battery having a material mixture containing active material particles capable of reversibly absorbing and desorbing lithium, and a current collector that carries the material mixture, wherein a surface of the current collector has recessed portions, and an area occupied by the recessed portions accounts for not less than 30% of an a material mixture carrying area of the current collector. The present invention further relates to an electrode for a lithium ion secondary battery wherein, in a cut surface obtained by simultaneously cutting a material mixture and a current collector vertically to an electrode plane, the maximum depth of recessed portions is not less than 1 μm, or a difference between an average thickness of a current collector and a maximum thickness of the current collector is not less than 0.35 μm.