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605 results about "Niobium pentoxide" patented technology

Niobium pentoxide is the inorganic compound with the formula Nb₂O₅. It is a colourless insoluble solid that is fairly unreactive. It is the main precursor to all materials made of niobium, the dominant application being alloys, but other specialized applications include capacitors, lithium niobate, and optical glasses.

High-refractive-index ultraviolet-transparent glass and manufacturing method thereof

ActiveCN104402218AHigh refractive indexExcellent acid resistance and chemical stabilityFiberRefractive index
The invention discloses high-refractive-index ultraviolet-transparent glass and a manufacturing method thereof. The high-refractive-index ultraviolet-transparent glass comprises following components, by weight, 5-15% of SiO2, 10-25% of B2O3, 0-5% of CaO, 0-5% of SrO, 10-50% of BaO, 10-50% of La2O3, 5-15% of Nb2O5, 0-5% of Y2O3, 0-5% of ZrO2 and 0-5% of TiO2. The invention also provides the manufacturing method of the high-refractive-index ultraviolet-transparent glass. The method includes following steps: placing quartz sand, boronic acid or boron anhydrous, calcium carbonate, strontium carbonate, barium carbonate, lanthanum oxide, niobium pentoxide, yttria, zirconium oxide and titanium dioxide according to requirement in a formula into a pure-platinum crucible with addition of a reduction agent, melting the materials at 1400-1600 DEG C for 6-10 hours with stirring for 2-3 times during the melting process, and casting the molten glass into a specified specification. The invention also discloses an application of the high-refractive-index ultraviolet-transparent glass in an ultraviolet-transparent optical fiber plate. The high-refractive-index ultraviolet-transparent glass is high in refractive index and transmittance and is good in chemical stability.
Owner:CHINA BUILDING MATERIALS ACAD

High transmittance conductive glass for touch screen and technique for producing the same

The invention discloses a high-transmissivity conductive glass for a touch screen and a process for producing the same. The high-transmissivity conductive glass for the touch screen comprises a glass substrate; the surface of the glass substrate is sequentially provided with a silicon dioxide film plating layer and a tin indium oxide film plating layer; the silicon dioxide film plating layer is positioned in an inner layer; the tin indium oxide film plating layer is positioned in an outer layer; a niobium pentoxide film plating layer is arranged between the glass substrate and the silicon dioxide film plating layer; a process flow comprises that: the qualified glass substrate is selected and cleaned; the cleaned glass substrate is sent into a film plating machine; the surface of the glass substrate is subjected to film plating processing; a finished product plated with a film is taken out from the film plating machine; the finished product is subjected to performance detection; and the qualified finished product is packaged and enters a warehouse. The high-transmissivity conductive glass utilizes good insulation and stable refractive index of columbium pentoxide and silicon dioxide and can improve the visible light transmittance of the conductive glass to 94 percent above; and a reasonable process course is favorable for improving controllability of operation and stability of product quality and can meet requirement of large-batch production.
Owner:常州津通光电技术有限公司

Novel ITO (indium tin oxide) gap-bridge integrated capacitive touch screen and manufacturing method of novel ITO gap-bridge integrated capacitive touch screen

The invention discloses a novel ITO (indium tin oxide) gap-bridge integrated capacitive touch screen and a manufacturing method of the novel ITO gap-bridge integrated capacitive touch screen. The novel ITO gap-bridge integrated capacitive touch screen comprises a transparent baseplate as well as a silicon dioxide layer, a niobium pentoxide layer, a black resin layer, an ITO gas-bridge electrode, a first insulating layer, an ITO electrode, a metal electrode and a second insulating layer which are sequentially stacked on the transparent baseplate; wherein the silicon dioxide layer is covered overall by glass, and the niobium pentoxide layer is covered overall by the silicon dioxide layer; the ITO electrode comprises a capacitive screen drive and a sensing electrode and is provided with the structure of regular graphics; the capacitive screen drive and the sensing electrode are in the identical layer, mutually independent and insulating from each other and are vertically designed. Due to the reasonable design of the stacked structure of the capacitive touch screen and the bridging conduction mode, the transmissivity of the capacitive touch screen is improved effectively, the visuality of the ITO pattern is reduced, and the reliability of the touch screen is further improved.
Owner:SHENZHEN BAOMING TECH

Preparation method of niobium (V) pentoxide urchin-like nano sphere and application of nano sphere as photocatalyst

The invention relates to a preparation method of a niobium (V) pentoxide urchin-like nano sphere and an application of the nano sphere as a photocatalyst. The preparation method comprises the following steps: step one, weighing alcohol and deionized water according to a volume ratio of 20:1 to 1:100 at a room temperature, mixing water and alcohol, and stirring to prepare an alcohol solution; step two, weighing soluble niobium salt, dissolving the soluble niobium salt into the alcohol solution obtained in the step one, and stirring for 0.5 to 5 hours to obtain a transparent solution; step three, transferring the obtained transparent solution to a hydrothermal reactor, wherein the transparent solution accounts for 50 to 70% of the total volume of the reactor, and the hydrothermal reactions are performed at a temperature of 100 to 220 DEG C, after reactions, naturally cooling the reactor to the room temperature, and washing and drying the reaction products to obtain the niobium (V) pentoxide urchin-like nano spheres. According to the preparation method, alcohol is used to adjust the polarity of the solution so as to adjust the growth speed of niobium, and thus niobium (V) pentoxide urchin-like nano spheres, which have uniform morphology and controllable diameters, are obtained. The prepared niobium (V) pentoxide urchin-like nano spheres has a high catalytic activity on degrading dyes in water in the presence of visible light.
Owner:ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY

Conductive niobium oxide target and preparation method and application thereof

The invention relates to a conductive niobium oxide target and a preparation method and application thereof. The niobium oxide target consists of NbOx, wherein x is more than 0.05 and less than 2.5, and according to the Archimedes method, the relative density of the niobium oxide target is not lower than 99 weight percent, the crystal structure is of a cubic crystal shape, the tensile strength is 10-20MPa, the Young's modulus is 1500-2800MPa and the resistivity is 0.03-1Omega.cm. The average transmittance of the film prepared with the conductive niobium oxide target is more than 94 percent within the visible spectral range. The preparation method comprises the following steps: mixing niobium pentoxide powder and niobium powder; filling the mixture into a die, placing the die into a sintering furnace, and carrying out pressure sintering in the inert or vacuum environment; and maintaining the temperature for 8-15 hours under the constant temperature and the constant pressure, and releasing the pressure, thereby obtaining the niobium oxide target. The invention has the advantages that the prepared niobium oxide target has excellent electrical conductivity, and the film with a high refractive index can be prepared through DC sputtering and intermediate-frequency sputtering.
Owner:上海高展金属材料有限公司 +1

Large-scale preparation method of niobium pentoxide nanowires and hydrogen-sensitive element thereof

The invention discloses a large-scale preparation method of niobium pentoxide nanowires and a hydrogen-sensitive element thereof. The preparation method particularly comprises the following steps of: strictly cleaning Nb foils cut into suitable sizes, arranging the foils in a vacuum tube type furnace after a bending or folding treatment, and strictly controlling processing conditions (such as Ar flow rate, O2 flow rate, holding temperature, time and the like) of a thermal oxidation process to synthesize large-scale Nb2O5 nanowires with higher length diameter ratios. By adopting the large-scale preparation method disclosed by the invention, the large-scale synthesis of the Nb2O5 nanowires with the higher length diameter ratios can be realized in a limited-volume furnace tube, thus the production cost can be effectively reduced. Hydrogen-sensitive elements manufactured from Pt electrodes, prepared by sputtering Nb2O5 nanowires as sensitive materials, have the characteristics of small size, low energy consumption and the like, and represent higher response speed and higher sensitivity at the room temperature towards a hydrogen-containing atmosphere; and the size, the energy consumption and the production cost of hydrogen sensors can be hopefully reduced.
Owner:武汉正光恒远科技有限公司

High temperature stable X9R type multilayer ceramic capacitor dielectric material and preparation method thereof

ActiveCN103936414AOvercome the high temperature reduction effectReduce lossBarium titanateCeramic capacitor
The invention discloses a high temperature stable X9R type multilayer ceramic capacitor dielectric material and a preparation method of the high temperature stable X9R type multilayer ceramic capacitor dielectric material. The high temperature stable X9R type multilayer ceramic capacitor dielectric material disclosed by the invention is prepared by the steps of adding a calcium-boron-silicon compound to a barium titanate-sodium bismuth titanate-niobium pentoxide eutectic compound serving as a matrix, compounding one or more of Ce, Nd and La oxides, and compounding one or more of barium-manganese oxide, magnesium oxide and zinc oxide; and the invention provides the preparation method of the high temperature stable X9R type multilayer ceramic capacitor dielectric material. The X9R type multilayer ceramic capacitor dielectric material prepared by using the material and the method provided by the invention has high temperature resistance (above 200 DEG C), and good temperature stability, and enable components and parts such as multilayer ceramic capacitors, tuners and duplexers to be suitable for the application at a high temperature (above 200 DEG C), thus having extremely high industrialization prospect and industrial application value.
Owner:FUJIAN TORCH ELECTRON TECH CO LTD

Single donor-doped positive temperature coefficient thermal-sensitive ceramic and preparation method thereof

The invention relates to the field of single donor-doped positive temperature coefficient thermal-sensitive ceramics, and discloses a single donor-doped positive temperature coefficient thermal-sensitive ceramic and a preparation method thereof. The preparation method comprises the following steps of (1) mixing and sintering BaTiO3 (barium titanate), PbTiO3 (lead titanate), TiO2 (titanium dioxide) and Nb2O5 (niobium pentoxide) for a first time, so as to obtain BaTiO3 and PbTiO3 mixed powder with a formula of Ba1-xPbxTiO3; (2) mixing and sintering the mixed powder, SiO2 and a manganese source for a second time, so as to obtain the single donor-doped positive temperature coefficient thermal-sensitive ceramic, wherein the usage amounts of BaTiO3 and PbTiO3 meet the formula of Ba1-xPbxTiO3, and x is equal to 0.15 to 0.25; corresponding to 100mol of Ba1-xPbxTiO3, the usage amount of TiO2 is 1 to 2mol, the usage amount of Nb2O5 is 0.08 to 0.1mol, the usage amount of SiO2 is 1 to 3mol, and the usage amount of MnO2 is 0.04 to 0.08mol. The single donor-doped positive temperature coefficient thermal-sensitive ceramic has the advantages that the positive temperature coefficient thermal-sensitive ceramic can be prepared by the single donor Nb2O5 doping; under the conditions of same batch and same formula, the resistance dispersion of a room-temperature resistor of a product is small, and the breakdown voltage is high.
Owner:汕尾比亚迪实业有限公司

Preparation method of carbon and nitrogen doped niobium (V) pentoxide nano sheet and application of nano sheet as photocatalyst

The invention discloses a preparation method of a carbon and nitrogen doped niobium (V) pentoxide nano sheet and an application of the nano sheet as a photocatalyst. The preparation method comprises the following steps: weighing soluble niobium salt at a room temperature, adding anhydrous ethanol to form an ethanol solution of niobium salt, dropwise adding an organic ammonium hydroxide solution into the ethanol solution of niobium salt, wherein in the initial phase, white turbidity appears, keeping on adding the organic ammonium hydroxide solution until the white turbidity disappears so as to form a clear and transparent solution; transferring the obtained solution to a hydrothermal reactor, wherein the solution accounts for 50 to 70% of the volume of the hydrothermal reactor, carrying out hydrothermal reactions at a temperature of 100 to 280 DEG C, after reactions, naturally cooling the reactor to the room temperature, washing and drying the reaction product to obtain white powder; and burning the white powder for 2 to 12 hours at a temperature of 400 to 1200 under the protection of nitrogen gas so as to obtain the carbon and nitrogen doped niobium (V) pentoxide nano sheet. The invention also discloses an application of the carbon and nitrogen doped niobium (V) pentoxide nano sheet as a photocatalyst. The photocatalyst can be applied to benzyl alcohol oxidation to prepare benzaldehyde.
Owner:ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY
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