Conductive niobium oxide target and preparation method and application thereof

A niobium oxide and target technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of difficult to obtain, complicated process, difficult to obtain excellent performance, etc., and achieve the effect of good electrical conductivity

Inactive Publication Date: 2010-10-20
上海高展金属材料有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the metal target needs to use reduction reaction to produce oxide film when sputtering method is used to produce high refractive index film, the process is more complicated and it is difficult to obtain a film with excellent performance,

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Material mixing

[0026] Take by weighing 20 kilograms of niobium pentoxide powder with a purity of 99.99%, and 1.6 kilograms of metallic niobium powder with a purity of 99.99%, fully mix and ball mill it for 3 hours to make it evenly mixed with each other;

[0027] (2) Sintering

[0028] Put the mixture obtained in step (1) into a graphite mold, put it into a sintering furnace, and carry out pressure sintering in a vacuum environment, wherein: the sintering temperature is 1100°C, the sintering pressure is 19Mpa, and the sintering time is 25 hours.

[0029] (3) pressure relief

[0030] Maintain the temperature at 1100°C and the pressure at 19Mpa, keep the temperature and pressure at constant temperature and pressure for 10 hours, and release the pressure to obtain the niobium oxide target.

[0031] analyze:

[0032] (1) The relative density of the target obtained by testing the Archimedes method is 99.3%;

[0033] (2) The chemical molecular formula of the target...

Embodiment 2

[0036] (1) Material mixing

[0037] Take by weighing 30 kilograms of niobium pentoxide powder with a purity of 99.99%, and 1.5 kilograms of metallic niobium powder with a purity of 99.99%, fully mix and ball mill it for 5 hours to make it evenly mixed with each other;

[0038] (2) Sintering

[0039] Put the mixture obtained in step (1) into a graphite mold, put it into a sintering furnace, and carry out pressurized sintering in a vacuum environment, wherein: the sintering temperature is 980°C, the sintering pressure is 25Mpa, and the sintering time is 22 hours.

[0040] (3) pressure relief

[0041] Maintain the temperature at 980°C and the pressure at 25Mpa, keep the temperature and pressure at constant temperature and pressure for 12 hours, and release the pressure to obtain the niobium oxide target.

[0042] analyze:

[0043] (1) The relative density of the target obtained by testing the Archimedes method is 99.2%;

[0044] (2) The chemical molecular formula of the targe...

Embodiment 3

[0047] (1) Material mixing

[0048] Take by weighing 40 kilograms of niobium pentoxide powder with a purity of 99.99%, and 3 kilograms of metallic niobium powder with a purity of 99.99%, fully mix and ball mill it for 5 hours to make it evenly mixed;

[0049] (2) Sintering

[0050] Put the mixture obtained in step (1) into a graphite mold, put it into a sintering furnace, and carry out pressure sintering under an argon atmosphere, wherein: the sintering temperature is 1050°C, the sintering pressure is 20Mpa, and the sintering time is 21 hours.

[0051] (3) pressure relief

[0052] Maintain the temperature at 1050°C and the pressure at 20Mpa, keep the temperature and pressure at constant temperature and pressure for 14 hours, and release the pressure to obtain the niobium oxide target.

[0053] analyze:

[0054] (1) The relative density of the target obtained by testing the Archimedes method is 99.25%;

[0055] (2) The chemical molecular formula of the target obtained by an...

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Abstract

The invention relates to a conductive niobium oxide target and a preparation method and application thereof. The niobium oxide target consists of NbOx, wherein x is more than 0.05 and less than 2.5, and according to the Archimedes method, the relative density of the niobium oxide target is not lower than 99 weight percent, the crystal structure is of a cubic crystal shape, the tensile strength is 10-20MPa, the Young's modulus is 1500-2800MPa and the resistivity is 0.03-1Omega.cm. The average transmittance of the film prepared with the conductive niobium oxide target is more than 94 percent within the visible spectral range. The preparation method comprises the following steps: mixing niobium pentoxide powder and niobium powder; filling the mixture into a die, placing the die into a sintering furnace, and carrying out pressure sintering in the inert or vacuum environment; and maintaining the temperature for 8-15 hours under the constant temperature and the constant pressure, and releasing the pressure, thereby obtaining the niobium oxide target. The invention has the advantages that the prepared niobium oxide target has excellent electrical conductivity, and the film with a high refractive index can be prepared through DC sputtering and intermediate-frequency sputtering.

Description

technical field [0001] The invention relates to a photoelectric material, in particular to a conductive niobium oxide target material, a preparation method and an application thereof. Background technique [0002] High refractive index films have high transmittance to visible light and can be used in liquid crystal displays (LCDs), plasma displays (PDPs), touch screens (Touch Panels), electroluminescent displays (LEDs), thin-film solar cells, optical lenses, etc. . At present, people have developed a variety of high-refractive index materials such as metal titanium, metal niobium, metal zirconium, titanium dioxide, and niobium pentoxide, etc., and prepare high-refractive index films by using magnetron sputtering. Magnetron sputtering is generally divided into two types: DC sputtering and radio frequency sputtering. Among them, DC sputtering can only sputter conductive materials, but its equipment principle is simple, and its speed is also fast when sputtering metals; while ...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/34C23C14/38C23C14/40B22F3/14
Inventor 庄志杰庄维新贾泽夏
Owner 上海高展金属材料有限公司
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