The application discloses a GaAs-based low-
capacitance high-bandwidth PIN
photodiode and a preparation method thereof, and relates to the technical field of semiconductors.The PIN
photodiode comprises a GaAs substrate, a deformation growth layer and an InP-based PIN functional layer.The deformation growth layer is used for realizing the
lattice constant transition from the GaAs substrate to the InP-based PIN functional layer.The InP-based PIN functional layer comprises an n-type
contact layer, a first intrinsic layer, an intrinsic
absorption layer and a window layer, and the first intrinsic layer is provided with an
ion implantation modification area, which is used for forming a high-resistance area to reduce the effective
electrical junction area of the device.The application realizes the heterogeneous integration of the GaAs substrate and the InP-based PIN functional layer through the deformation growth layer, significantly reduces the device cost, realizes the physical decoupling of the photosensitive area and the
electrical junction area through the
ion implantation modification area, and significantly reduces the intrinsic junction
capacitance while maintaining a large optical aperture, thereby systematically solving the inherent contradiction among the bandwidth, the
responsivity and the cost in a high-speed PIN-PD.