114results about How to "Reduced shutdown current" patented technology

One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming an oxide component over a base component; forming a first oxide crystal component which grows from a surface toward an inside of the oxide component by heat treatment, and leaving an amorphous component just above a surface of the base component; and stacking a second oxide crystal component over the first oxide crystal component. In particular, the first oxide crystal component and the second oxide crystal component have common c-axes. Same-axis (axial) growth in the case of homo-crystal growth or hetero-crystal growth is caused.

An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode are included. The first transistor is provided over a substrate including a semiconductor material and a second transistor includes an oxide semiconductor layer.

A semiconductor device with a novel structure is provided, in which the operation voltage is reduced or the storage capacity is increased by reducing variation in the threshold voltages of memory cells after writing. The semiconductor device includes a plurality of memory cells each including a transistor including an oxide semiconductor and a transistor including a material other than an oxide semiconductor, a driver circuit that drives the plurality of memory cells, and a potential generating circuit that generates a plurality of potentials supplied to the driver circuit. The driver circuit includes a data buffer, a writing circuit that writes one potential of the plurality of potentials into each of the plurality of memory cells as data, a reading circuit that reads the data written into the memory cells, and a verifying circuit that verifies whether the read data agrees with data held in the data buffer or not.

A semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of write cycles. The semiconductor device includes a memory cell including a first transistor, a second transistor, and an insulating layer placed between a source region or a drain region of the first transistor and a channel formation region of the second transistor. The first transistor and the second transistor are provided to at least partly overlap with each other. The insulating layer and a gate insulating layer of the second transistor satisfy the following formula: (ta / tb)×(∈ra / ∈rb)<0.1, where ta represents the thickness of the gate insulating layer, tb represents the thickness of the insulating layer, ∈ra represents the dielectric constant of the gate insulating layer, and ∈rb represents the dielectric constant of the insulating layer.