365 results about "Linear element" patented technology

A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

An external mask-based radiance camera may be based on an external, non-refractive mask located in front of the main camera lens. The mask modulates, but does not refract, light. The camera multiplexes radiance in the frequency domain by optically mixing different spatial and angular frequency components of light. The mask may, for example, be a mesh of opaque linear elements, which collectively form a grid, an opaque medium with transparent openings, such as circles, or a pinhole mask. Other types of masks may be used. Light may be modulated by the mask and received at the main lens of a camera. The main lens may be focused on a plane between the mask and the main lens. The received light is refracted by the main lens onto a photosensor of the camera. The photosensor may capture the received light to generate a radiance image of the scene.

An electro-optic display comprises a bistable electro-optic medium, a plurality of pixel electrodes, with associated non-linear elements, and a common electrode, disposed on opposed sides of the electro-optic medium. The display has a writing mode, in which at least two different voltages are applied to different pixel electrodes, and a non-writing mode in which the voltages applied to the pixel electrodes are controlled so that any image previously written on the electro-optic medium is substantially maintained. The display is arranged to apply to the common electrode a first voltage when the display is in its writing mode and a second voltage, different from the first voltage, when the display is in its non-writing mode.

A quadrupole ion trap mass analyzer in which the trapping volume is defined by spaced linear rods in which linear elements located between the spaced linear rods produce image currents produced by motion of ions in the trapping volume.

Digital predistortion system, methods and circuitry for adapting a predistortion system linearizing a non-linear element. The system is a multiply partitioned architecture that addresses long or “memory” effects, and separately addresses shorter duration effects. In a preferred method, the non-linear element is first modeled in software as a nonlinearity and a linearity in cascade form, preferably a Wiener model. The model is validated and adapted to minimize an observed error between the model and the non-linear element. The software model of the non-linear element is then used first to model a predistortion block that addresses short duration effects, and second to separately model a predistortion block that addresses longer duration effects. The models are software executable by an external processor in real time. Periodically the models are executed and used to update the adaptive parameters of the predistortion system without interrupting the system operation.

A method of generating values of a predistortion look up table for linearization of a transmitter. The method includes accumulating a plurality of pairs of values representing input and output values of samples entering one or more non-linear elements of the transmitter, fitting the pairs of values into a parameteric model of at least one of the one or more non-linear elements, so as to determine values for the parameters of the parameteric model, and generating values of the look up table responsive to the fitted parameteric model.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

The present invention relates to an audio amplification circuit comprising a first preamplifier for receipt of an audio input signal and a second preamplifier comprising a first differential input for receipt of an attenuated audio input signal. The attenuated audio input signal is generated by an attenuator coupled to the audio input signal. A non-linear element is coupled to a first input of the first preamplifier thereby distorting the audio input signal at the first input at large signal levels. A distortion compensation network is adapted to supply a distortion compensation signal from the first input of the first preamplifier to a second differential input of the second preamplifier such that distortion in the output signal of the second preamplifier is cancelled or attenuated. The invention further relates to a corresponding method of compensating an audio amplification circuit for distortion induced by a non-linear element.

In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold.

A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×10¹⁹/cm³ or lower, a work function φms of a source electrode in contact with the oxide semiconductor, a work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd, and an area of contact between the drain electrode and the oxide semiconductor is larger than an area of contact between the source electrode and the oxide semiconductor. By electrically connecting a gate electrode and the drain electrode in the transistor, a non-linear element having a favorable rectification property can be achieved.

A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.

A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

A method is described for predistorting an input signal to compensate for non-linearities caused to the input signal in producing an output signal. The method comprises: providing an input for receiving a first input signal as a plurality of signal samples, x[n], to be transmitted over a non-linear element; providing at least one digital predistortion block comprising, a plurality of IQ predistorter cells coupled to the input, each comprising a lookup table (LUT) for generating an LUT output The at least one digital predistortion block block is configured to apply interpolation between LUT entries for the, plurality of LUTs; and generate an output signal, y[n], by each of the plurality of IQ predistorter cells by adaptively modifying the first input signal using interpolated LUT entries to compensate for distortion effects in the non-linear element. A combiner may be provided configured to combine the output signal samples, y_Q, from the plurality of IQ predistorter cells into a combined signal to generate the output signal, y[n], for transmission to the non-linear element. An error calculation block may be coupled to a digital predistortion adaptation block to determine and modify a predistortion performance.

A method of assigning values to parameters for IQ mismatch cancellation. The method includes providing values to a processing path of a communication device, passing the provided values through an IQ modulator, at least one non-linear element and an IQ demodulator, to produce distorted values, and estimating at least one parameter for cancellation of IQ mismatch effects of the communication device responsive to the provided values and to the distorted values.

A light emitting diode device includes a light emitting diode and a non-linear element which are arranged on a substrate. The non-linear element is composed of an organic compound layer.

An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.