A non-
linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-
linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a
transistor is formed on a insulating substrate by forming gate electrodes, depositing a
dielectric layer, a
semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the
resultant transistor with an etch-resistant material and
etching using the etch-resistant material and the conductive layer as a
mask, the
etching extending substantially through the
semiconductor layer between adjacent transistors. The invention also provides a process for forming a
diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned
dielectric layer over parts of the first conductive layer, and
etching the first conductive layer using the second conductive layer and
dielectric layer as an etch
mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.