A kind of cstbt device and manufacturing method thereof
A device, N-type technology, applied in the field of semiconductor power devices, can solve the problems of affecting the compromise characteristics of device switching loss, increasing device switching loss, and reducing switching speed, etc.
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Embodiment 1
[0065] This example proposes as figure 2 A kind of CSTBT device shown, its cell structure includes: collector structure, drift region structure, emitter structure and groove gate structure; Described collector structure comprises P+ collector region 12 and is positioned at P+ collector region 12 lower surface The collector metal 13; the drift region structure includes an N-type electric field stop layer 11 and an N-type drift region layer 10 located on the upper surface of the N-type electric field stop layer 11, and the N-type electric field stop layer 11 is located in the P+ collector region 12 The upper surface of the trench gate structure; the trench gate structure is a trench gate structure, the trench gate structure penetrates into the N-type drift region 10 along the vertical direction of the device to form a trench, and the emitter structure is located on one side of the trench gate structure The emitter structure includes an emitter metal 1, an N+ emitter region 3, a...
Embodiment 2
[0067] This example proposes as image 3 The shown CSTBT device has the same structure as that of Embodiment 1 except that the thickness of the trench-split electrode dielectric layer 15 is greater than that of the gate dielectric layer 7 .
[0068] Compared with Embodiment 1, this embodiment can further reduce the gate capacitance on the one hand, increase the switching speed of the device and reduce the switching loss, and on the other hand can further improve the electric field concentration effect at the bottom of the trench and increase the breakdown voltage of the device. , improve device reliability.
Embodiment 3
[0070] This example proposes as Figure 4 A CSTBT device shown, its cell structure includes: a collector structure, a drift region structure, an emitter structure and a groove gate structure; the collector structure includes a P+ collector region 12 and is located under the P+ collector region 12 The collector metal 13 on the surface; the drift region structure includes an N-type electric field stop layer 11 and an N-type drift region layer 10 located on the upper surface of the N-type electric field stop layer 11, and the N-type electric field stop layer 11 is located in the P+ collector region 12; the trench gate structure is a trench gate structure, the trench gate structure penetrates into the N-type drift region 10 along the vertical direction of the device to form a trench, and the emitter structure is located on both sides of the trench gate structure And connected to it; the emitter structure includes emitter metal 1, N+ emitter region 3, P+ contact region 4, P-type ba...
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