166results about How to "Prevent characteristic deterioration" patented technology

An electrophoretic display device sequentially driven during a data updating period when a data is updated and a sleep-mode period when a data is maintained includes an electrophoretic display panel including a plurality of data lines crossing a plurality of gate lines to form a plurality of cells, a plurality of pixel electrodes, a common electrode for driving each of the plurality of cells, and a TFT at a crossing of one of the data lines and one of the gate lines to supply a data voltage from the one of the data lines to a corresponding one of the pixel electrodes; a data driving circuit supplying the data voltage to the data lines during the data updating period; a gate driving circuit supplying a scanning pulse to the gate lines during the data updating period; and a controller sequentially raising an impedance of each of the data lines, the common electrode, and the gate lines during the sleep-mode period.

The present invention provides a composition comprising a liquid crystalline polyester, a plate-like filler and a carbon black having a number average particle size of more than 20 nm and 45 nm or less. The composition is less likely to cause blister even at a high temperature.

Provided is a flat panel detector which prevents aging deterioration of characteristics of a phosphor layer, protects the phosphor layer from chemical alteration or physical impact, and maintains a stable contact state between a scintillator panel and a flat light receiving element. Disclosed is a flat panel detector comprising a scintillator panel comprising a scintillator provided with a phosphor layer on a substrate and a protective layer covering the phosphor surface of the scintillator, and the scintillator panel being placed on the surface of a flat light receiving element comprising plural picture elements which are two-dimensionally arranged, wherein a re-releasable adhesive layer is provided on the protective layer surface.

The present invention provides a method of fabricating a semiconductor device in which deterioration in a transistor characteristic is prevented by preventing a channel stop implantation layer from being formed in an active region. A resist mask is formed so as to have an opening over a region in which a PMOS transistor is formed. Channel stop implantation is performed with energy by which ions pass through a partial isolation oxide film and a peak of an impurity profile is generated in an SOI layer, thereby forming a channel stop layer in the SOI layer under the partial isolation oxide film, that is, an isolation region. An impurity to be implanted here is an N-type impurity. In the case of using phosphorus, its implantation energy is set to, for example, 60 to 120 keV, and the density of the channel stop layer is set to 1×10¹⁷ to 1×10¹⁹/cm³. At this time, the impurity of channel stop implantation is not stopped in the SOI layer corresponding to the active region.

Disclosed is a perpendicular magnetic recording medium including a nonmagnetic substrate, a multilayered underlayer which includes a ferromagnetic underlayer having a perpendicular coercive force of 39.5 kA/m or less and a weakly magnetic underlayer having a saturation magnetization Ms of 50 to 150 emu/cc, and a perpendicular magnetic recording layer.

Claw-shaped magnetic poles are alternately disposed along the rotation plane of a rotor of an electric rotating machine, and a permanent magnet is disposed between the claw-shaped magnetic poles. Surface of the permanent magnet is coated with a coating layer. The coating layer is composed of a anticorrosive material performing sacrificial anticorrosion (metal flake in a coating film rusts prior to a matrix resulting in protection of the matrix) such as inorganic material containing zinc and a film of the anticorrosive material is formed by spraying. Ionization tendency of zinc is larger than that of iron composing the permanent magnet, and the permanent magnet is difficult to be rusted owing to the sacrificial anticorrosion. Consequently, anticorrosion of the permanent magnet disposed between the claw-shaped magnetic poles is improved.

There is provided a semiconductor device, wherein a digital circuit region and an analog circuit region are located independently. A power supply wiring and a ground wiring are placed on the periphery of each circuit region and are connected to elements in each circuit region. A MOS capacitor is formed under the power supply wiring and the ground wiring. The terminals of the MOS capacity are connected to the power supply wiring and the ground wiring. Pads are placed in each circuit region surrounded by the power supply wiring, the ground wiring, and the MOS capacitor and are connected to the elements of each circuit region.

A thin film transistor array panel includes: a substrate, a gate line positioned on the substrate and including a gate electrode, a semiconductor layer positioned on the substrate and including an oxide semiconductor, a data wire layer positioned on the substrate and including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, and a capping layer covering the data wire layer, in which an end of the capping layer is inwardly recessed as compared to an end of the data wire layer.

A portable telephone includes a portable telephone body made from plastic having a receiver, a transmitter, and dial keys, and a chip antenna which is mounted on a circuit board secured at the inside of the portable telephone body and which is electrically connected to an RF section provided on the circuit board in the portable telephone. The chip antenna is disposed near the transmitter at a location where a transmitted electromagnetic signal is unlikely to be affected by the body of a person who is holding the portable telephone.

Disclosed is an LCD driver integrated circuit package and a chip on glass type LCD device using the package. The LCD driver integrated circuit package includes a mold that has signal output bumps and signal input bumps formed thereon, wherein the signal output bumps and the signal input bumps have different surface areas that contact the mold and an adjacent conductive film. Due to the different contact surface areas, different amounts of pressure are applied to different parts on the conductive film when a force is applied to the mold. One or more bump pressure control patterns are formed on the mold compensate for the difference in pressure caused by this difference between the total contact areas. Accordingly, the LCD driver integrated circuit package can be mounted on a chip on glass type LCD panel without causing device failure.

There is provided a wiring board. The wiring board includes: a semiconductor substrate having a through hole and covered with an insulating film; a through electrode formed in the through hole; a first wiring connected to one end of the through electrode; and a second wiring connected to the other end of the through electrode. The semiconductor substrate includes: a semiconductor element and a first guard ring formed to surround the through hole. The semiconductor element includes a first conductivity-type impurity diffusion layer having a different conductivity-type from that of the semiconductor substrate and is electrically connected to the first wiring and the second wiring.

The invention belongs to the technical field of power semiconductor devices, and particularly relates to a reverse trench gate charge storage-type insulated gate bipolar transistor. Double split electrodes which are equal to an emitter in potential and dielectric layers between the double split electrodes and a gate electrode are introduced into the bottom part and the side surface of the gate electrode in a trench of an RC-IGBT device, so that the switching speed of the device in the IGBT working mode is improved; the carrier concentration distribution of the whole N-type drift region is improved; the switching loss of the device is reduced; the saturated current density of the device is reduced; the short-circuit safe operation area of the device is improved; the reliability is improved; a reverse free-wheeling diode has a low diode conduction voltage drop in a reverse free-wheeling diode working mode; the reverse recovery characteristics of the free-wheeling diode are improved; and meanwhile, the manufacturing method of the double split trench gate charge storage-type IGBT does not need to increase an extra processing step and is compatible with a traditional RC-IGBT manufacturing method.

The embodiment of the invention discloses a digital driving pixel circuit, a driving method thereof and a display panel. The digital driving pixel circuit comprises a data writing module, a latch module, at least two light-emitting modules and light-emitting control modules in one-to-one correspondence with the light-emitting modules, the data writing module is used for controlling writing of datavoltage into the latch module; the latch module is used for latching data voltage; the light-emitting control module is used for alternate conduction; the at least two light-emitting modules are controlled to emit light alternately; further, the characteristic deterioration caused by long-time continuous work of the light-emitting module can be avoided; according to the digital drive circuit, theproblems of failure of the light-emitting modules and the like in the prior art are solved, so that each light-emitting module can release heat and be cooled after emitting light for a period of timeand when not emitting light, the temperature of each light-emitting module is not too high, good characteristics of the light-emitting modules are guaranteed, and the display effect of the display panel comprising the digital drive circuit is improved.

In one embodiment of the present invention, a film forming method of epitaxially growing a semiconductor film having a wurtzite structure by sputtering on a substrate for epitaxial growth heated to a desired temperature by using a heater, comprises the following steps. First, the substrate is disposed on a substrate holder including the heater in such a way that the substrate is disposed away from the heater by a predetermined distance. Then, the epitaxial film of the semiconductor film having the wurtzite structure is formed on the substrate in the state where the substrate is disposed away from the heater by the predetermined distance.

A mobile station apparatus communicates with a wireless base station apparatus to which closed-loop transmission diversity control is applied, the closed-loop transmission diversity control controlling phases of signals transmitted from two antennas based upon feedback information notified by the mobile station apparatus and transmitting the signals. The mobile station apparatus includes a control unit which determines whether to reflect an estimated phase result of the signals transmitted from the two antennas or not, depending on a channel type of signals transmitted from the wireless base station apparatus.

The invention relates to the technical field of displaying, and discloses a manufacturing method of an array substrate. The manufacturing method comprises the steps that a pattern comprising a grid electrode, a grid line, a common electrode line and a grid insulating layer is formed on a substrate body; a pattern comprising a data line, a source electrode, a drain electrode and an active layer is formed; a pattern comprising an insulating spacer layer is formed on the pattern comprising the source electrode, the drain electrode and the active layer; a pattern comprising a first transparent electrode is formed on the insulating spacer layer; a pattern comprising a passivation layer is formed on the first transparent electrode; a pattern comprising a second transparent electrode is formed on the passivation layer. The invention further discloses the array substrate and a display device. The pollution to a TFT channel due to the ITO technology can be effectively avoided.

A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.

The present invention relates to a semiconductor device and a method for producing the same, capable of obtaining the required properties in the semiconductor device of the fin-shaped semiconductor regions. A gate insulating film (62) is so formed as to straddle a fin-shaped semiconductor region (61) having an impurity region (61a) in the upper portion and an impurity region (61b) in the side portions. The curvature radius r' of the upper corner of a part of the fin-shaped semiconductor region (61) located outside the gate insulating film (62) is larger than the curvature radius r of the upper corner of another part of the fin-shaped semiconductor region (61) located below the gate insulating film (62), but not larger than 2r.