1results about How to "Improve chip yield" patented technology

The application provides a CMOS-MEMS integrated pressure sensor and a preparation process thereof. The pressure sensor comprises a bonded MEMS wafer and a CMOS wafer; a bonding sealing area and a PAD vertical interconnection structure in the bonding sealing area are arranged between the MEMS wafer and the CMOS wafer; the bonding sealing structure is formed by eutectic bonding of a metallization layer and a metal solder ball formed in corresponding bonding areas of the two wafers, and the bonding sealing structure surrounds a sensitive element to form a sealed cavity; the PAD vertical interconnection structure comprises conductive bumps respectively formed on the two wafers, the two conductive bumps are aligned with each other and bonded, and electrical interconnection between the MEMS wafer and the CMOS wafer is realized. The electrical interconnection of the pressure sensor realizes monolithic integration, not only improves the problems of increased signal transmission loss, reduced detection precision caused by additional parasitic resistance, capacitance and inductance introduced by wire bonding, and external noise interference, but also improves the service life and reliability, and reduces the size of the chip.