Gas injection system for etching profile control

Abstract

A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part.

Description

CROSS REFERENCE[0001]This application claims foreign priority under Paris Convention and 35 U.S.C. §119 to Korean Patent Application No. 10-2010-0015999, filed Feb. 23, 2010 with the Korean Intellectual Property Office.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a gas injection system provided in a plasma etching equipment. More particularly, the present invention relates to a gas injection system for etching profile control, for jetting a tuning gas adjacently to an edge part of a wafer for a user to precisely control an etch rate or a Critical Dimension (CD) uniformity and profile in the edge part, thereby being capable of improving an etching uniformity through uniform formation of a Critical Dimension (CD) and profile of the whole wafer and minimizing a process failure.[0004]2. Description of the Related Art[0005]Generally, an ultra-fine circuit or pattern of a desired is formed on a surface of a large-diameter wafer used for ...

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Benefits of technology

[0016]An aspect of exemplary embodiments of the present invention is to address at least the problems and/or disadvantages and to provide at least the advantages described below. Accordingly, an aspect of exemplary embodiments of the present invention is t

Problems solved by technology

However, there was a problem that a chip yield of an edge part is remarkably deteriorated because etch rates of a center part and outer part (i.e., edge part) of a wafer are generally different from each other and CD uniformity or profiles are differently formed.

Firstly, regarding controlling a temperature of a wafer, in a case where high power is used as in an oxide film etching process (i.e., an oxide process), a CD control effect due to temperature control is unsatisfied.

Secondly, regarding dividing a showerhead into inner and outer parts or addi

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