66 results about "Plasma control" patented technology

The invention discloses a fusion power generation system, a power generation control method, a storage medium and a controller, and relates to the technical field of fusion energy. The fusion power generation system comprises a steam generator set, a plurality of Tokamak devices and a plurality of thermal conversion units, the Tokamak devices and the thermal conversion units are in one-to-one correspondence, each thermal conversion unit is provided with a first channel and a second channel, and the Tokamak devices and the first channels of the corresponding thermal conversion units form a cladding cooling loop. The steam generator set and a plurality of second channels connected in sequence form a power generation loop; wherein the plurality of Tokamak devices are configured to operate in an alternating or complementary manner; the thermal conversion units are configured to receive heat from the corresponding cladding cooling loops and convert working media in the power generation loops into steam through the heat so as to drive the steam generator set to generate power. According to the system, the plurality of Tokamak devices operate in an alternating or complementary mode, so that heat loss can be reduced, the power generation efficiency is improved, and the plasma control difficulty is reduced.

This plasma processing device has a processing chamber, a substrate holding unit, and a plasma source. The processing chamber provides a processing space for a substrate. The substrate holding unit holds the substrate in the processing chamber. The plasma source is configured to supply plasma into the processing chamber and comprises a gas supply unit, piping, an electromagnetic wave generator, an electromagnetic wave supply unit, and a resonator array structure. The gas supply unit supplies a raw material gas. The piping connects the gas supply unit and the processing chamber. The electromagnetic wave generator generates electromagnetic waves for plasma excitation to be supplied into the piping. The electromagnetic wave supply unit supplies the electromagnetic waves into the piping via a dielectric window provided in the piping. The resonator array structure includes a plurality of resonators that can resonate with a magnetic field component of the electromagnetic waves, have a smaller size than the wavelength of the electromagnetic waves, and are disposed in the direction of the same plane surface.

The invention belongs to the technical field of plasma simulation, and discloses an arc plasma simulation method based on a self-learning network architecture, which comprises the following steps of: defining a simulation process taking space coordinates and time of arc plasma as input and taking a physical field variable determined by an arc plasma control equation as output; constructing a loss function according to the arc plasma control equation for measuring the degree of the physical field variable meeting the control equation; constructing a discrete learning space for learning the network architecture by taking a loss function as a standard for measuring the performance of the network architecture, and introducing learnable continuous architecture parameters to perform continuous relaxation on the discrete learning space to obtain a micro-learnable space; the problems that according to a simulation method in the prior art, neural network architecture design excessively depends on artificial experience and lacks effective guidance, so that an optimal network structure is difficult to obtain, and simulation precision and generalization ability are insufficient easily are effectively solved.

The application relates to a laser-induced silicon carbide wafer crack propagation plasma control method, which comprises the following steps: laser focusing is carried out at a to-be-processed position of a silicon carbide crystal ingot, and a high excitation state plasma is generated in the crystal ingot; after the plasma is generated, an external magnetic field or an electric field is applied to control the movement state of the plasma, so that the crack propagates along a predetermined path and depth; characteristic parameters of the plasma are monitored in real time, data is transmitted to a feedback control system, laser parameters, magnetic field or electric field intensity are dynamically adjusted according to the movement state of the plasma; the crack growth range is expanded through multiple scanning, and wafer peeling is realized. The laser-induced silicon carbide wafer crack propagation plasma control method can effectively control the crack propagation path and depth, avoid the disordered propagation of the crack, greatly reduce the material damage in the silicon carbide wafer processing process, efficiently peel the silicon carbide wafer, improve the processing speed, and improve the quality of the final product.

A plasma processing device comprises a processing container (12), a substrate support part (14), an electromagnetic wave generator (16), a dielectric (20), an electromagnetic wave supply unit (30), a resonator array structure (100), and a control unit (11). The processing container (12) is provided with a first space (S1) and a second space (S2) for generating plasma. The substrate support part (14) supports a substrate (14a). The electromagnetic wave generator (16) generates electromagnetic waves for plasma excitation. The dielectric (20) is provided such that a first surface (20a) thereof faces the interior of the processing container (12). The electromagnetic wave supply unit (30) supplies electromagnetic waves into the processing container (12). The resonator array structure (100) includes a plurality of resonators (101) that are provided between the first space (S1) and the second space (S2), are capable of resonating with a magnetic field component of the electromagnetic waves, are smaller in size than the wavelength of the electromagnetic waves, and are arranged in the same plane direction. The control unit (11) controls generation of plasma in the first space (S1) and the second space (S2). The first space (S1) is a space between the first surface (20a) of the dielectric (20) and the resonator array structure (100), and the second space (S2) is a space between the resonator array structure (100) and the substrate support part (14).

Solid-state switch array apparatus and methods for digitized plasma magneto-inertial fusion are disclosed herein. A solid-state switch array apparatus for enabling discharge of direct current includes multiple solid-state switches arranged in series and parallel configurations. The apparatus includes corresponding series resistor circuits connected in parallel with each solid-state switch to distribute voltage across the switches and receive constant current flow from a power supply during charging. Snubber circuits including capacitors configured in parallel with each solid-state switch protect against transient back electromotive force during discharge. A ferrite core assembly includes wire fed through ferrite cores wound and connected to gates and cathodes of the solid-state switches. The ferrite core assembly delivers voltage pulses to simultaneously transition all switches to a conducting state in response to discharge from a discharge circuit capacitor, enabling control for plasma generation applications.

The invention discloses a voltage distribution measurement method based on a nonlinear resistance network. According to the method, a physical grid model composed of a linear resistor and a nonlinear current source is constructed, and a node voltage model equation is established by taking a grid original point as a potential reference point. Two-dimensional measurement data are subjected to dimensionality reduction to form a univariate function by utilizing network physical symmetry, and efficient calculation is realized by combining an FPGA (Field Programmable Gate Array) pipeline architecture. And when the detected voltage value is lower than-15V, starting a cut-off protection mechanism to force the clamping voltage and closing the current source. And finally, a voltage change curve and a two-dimensional thermodynamic diagram are generated through a visualization module, and voltage distribution is visually reflected. The method solves the problems of large error, poor real-time performance and circuit oscillation of a traditional measurement method, is suitable for nonlinear resistance network voltage monitoring in the fields of condensed state physics, plasma control and the like, and has the advantages of high measurement precision, high response speed, reliable hardware protection and the like.

To provide a plasma processing apparatus and the like capable of generating high-density radicals while suppressing the influences of heat, electromagnetic waves, and ions.SOLUTION: A plasma processing apparatus includes a processing chamber, a substrate holding part, and a plasma source. The processing chamber provides a processing space for a substrate. The substrate holding part holds the substrate in the processing chamber. The plasma source is configured to supply plasma into the processing chamber, and includes a gas supply part, piping, an electromagnetic wave generator, an electromagnetic wave supply part, and a resonator array structure. The gas supply part supplies a raw material gas. The piping connects the gas supply part and the processing chamber. The electromagnetic wave generator generates electromagnetic waves for plasma excitation supplied into the piping. The electromagnetic wave supply part supplies the electromagnetic waves into the piping through a dielectric window provided in the piping. The resonator array structure is capable of resonating with the magnetic field components of the electromagnetic waves, is smaller in size than the wavelength of the electromagnetic waves, and includes a plurality of resonators arranged in a direction on the same plane.SELECTED DRAWING: Figure 2

The application discloses a fusion power generation system, a power generation control method, a storage medium and a controller, and relates to the technical field of fusion energy. The fusion power generation system comprises a steam generator unit, a plurality of tokamak devices corresponding to the steam generator unit in one-to-one correspondence and a plurality of heat conversion units, the heat conversion unit is provided with a first channel and a second channel, the tokamak device and the first channel of the corresponding heat conversion unit form a blanket cooling loop, and the steam generator unit and a plurality of sequentially connected second channels form a power generation loop; wherein the plurality of tokamak devices are configured to operate in an alternating or complementary manner; the heat conversion unit is configured to receive heat from the corresponding blanket cooling loop, and convert the working medium in the power generation loop into steam by using the heat to drive the steam generator unit to generate power. The system can reduce heat loss, improve power generation efficiency and reduce the difficulty of plasma control by operating the plurality of tokamak devices in an alternating or complementary manner.

The present invention discloses a sewage treatment system, method, and electronic device, relating to the technical field of sewage treatment. The system includes a distributed plasma control module, a water information collection module, and a plasma treatment module. The plasma treatment module includes a negative electrode plate and an array of plasma sewage treatment components. The plasma sewage treatment components include a high-voltage power supply, a low-temperature plasma generating unit, and a vertical motion module. The electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and arranged opposite the negative electrode plate, which is connected to the negative electrode of the high-voltage power supply. The distributed plasma control module is respectively connected to the water information collection module and each vertical motion module, and is used to determine a first target control parameter for each vertical motion module based on the sewage information collected by the water information collection module before and after treatment. The module controls the corresponding vertical motion module to drive the corresponding low-temperature plasma generating unit to move vertically to adjust the plasma treatment density.

The invention discloses a production line for synthesizing silicon nitride micropowder by using crystal silicon slice waste mortar. The production line comprises a filter press, a filtrate clarification tank, a vacuum dryer, a rotary vibration sieve, a silicon powder tank, a vector fluidization seat, an atomization ejector, an atomization synthesizer, a plasma spray gun, a plasma control cabinet, a circulating water high-level tank, a circulating water tank, a circulating water pump, a spray head, a nitrogen source device, a liquid nitrogen gasifier and a pressure regulating valve group, the system is composed of a flow control valve bank, a nitrogen recovery tank, a vacuum packaging machine, corresponding process pipelines and an automatic control system. The method comprises the following steps: preparing high-purity silicon powder by using crystalline silicon slice waste mortar, carrying out heat exchange and heating on fresh nitrogen and a reaction product, preheating fluidized silicon powder, atomizing, spraying into a synthesizer, reacting under specific process conditions to generate silicon nitride, introducing excess reaction nitrogen and the generated product into a quench cooler, carrying out heat exchange with the fresh nitrogen, and quenching to below 150 DEG C; fixing the crystal form and granularity of the silicon nitride structure, entering a gas-solid separator to complete the separation of Si3N4 and N2, entering the Si3N4 into a packaging inlet of a packaging machine to be sold, and emptying and discharging N2; the cooling water circulation system exchanges heat and cools the equipment, and the control cabinet detects and controls the operation condition of the process unit.

A high voltage pulsing power system is disclosed that include a DC power supply, a switch circuit electrically coupled with the DC power supply, a droop control circuit coupled with the switch circuit, and / or an output. The switch circuit includes a plurality of switch modules and produces a plurality of pulses. The droop control circuit includes a droop diode, a droop inductor, and a droop element. The droop diode may be electrically coupled in series between the switch circuit and the transformer primary that allows the negative pulse portion of the pulses to pass from the switching circuit to the transformer primary. The droop inductor and he droop element may be arranged in series across the droop diode to allow the negative pulse portion of the pulses to pass from the switching circuit to the transformer primary and / or store energy from the negative pulse portion of the pulses.

A robot end effector for surface preparation in an automated inspection and repair system for composite parts has an end effector body and a plasma control unit and a plasma jet nozzle supported on the end effector body. The plasma control unit directs a jet of atmospheric plasma through the plasma jet nozzle. A slave tool changer is secured to the end effector body. The slave tool changer releasably and operatively connects the robot end effector to an industrial robot such that the industrial robot can move the robot end effector along a composite part as the plasma control unit directs a jet of atmospheric plasma through the plasma jet nozzle toward the composite part to clean the composite part and increase a surface free energy of the composite part.

This invention discloses a method for quantitative analysis of elements on the inner wall surface of a magnetic confinement fusion device using laser-induced breakdown spectroscopy, belonging to the field of laser spectral analysis technology. This method is based on laser-induced breakdown spectral data of impurity layers on the wall material surface. According to the relationship between the intensity of spectral lines of each element in the characteristic spectral data, a pre-classification model of the deposited impurity film composition is used to predict the matrix properties of the impurity layer to be tested. Based on the matrix properties, a spectral standard sample similar to the matrix of the sample to be tested is selected for single-sample corrected spectral calculation. After correcting for characteristic spectral line errors, quantitative analysis is performed. This method enables large-scale, high-resolution quantitative measurement of the content of corrosion-redeposited impurities, wall treatment coatings, retained fuel, and other impurity elements in the wall material of the magnetic confinement device. This invention provides rich information on the compositional structure of the deposited impurity layer on the wall surface, which can provide important basis for fuel injection, wall treatment maintenance, and high-parameter plasma control in the operation of magnetic confinement fusion devices.

A susceptor assembly for a reactor system may provide various plasma control benefits. The susceptor assembly includes a body, a heater element, a first electrode, and a second electrode, according to various embodiments. The body may have a top surface, a side surface, and a bottom surface, wherein the top surface is a substrate support surface. The heater element may be embedded within the body. The first and second electrodes may also be embedded within the body of the susceptor assembly, with the first electrode disposed between the heater element and the top surface of the body. The second electrode may be generally disposed proximate at least one of the side surface and the bottom surface.

According to one embodiment, a radiating structure of a resonant structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonant structure to form a corresponding first resonant circuit operating at a first resonant frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonant structure to form a corresponding second resonant circuit operating at a second resonant frequency. In a first operating mode, the resonant structure operates as a single resonant antenna. In a second operating mode, the resonant structure operates as a parallel resonant antenna.

The invention discloses a waveform-controllable plasma processing method and system, and belongs to the technical field of semiconductor manufacturing processes. Providing a programmable control radio frequency power waveform to a bottom electrode in the plasma cavity as a bias voltage, wherein the programmable control radio frequency power waveform comprises a pulse waveform and a slope waveform; plasma control variables are measured through a sensor arranged at the output end of the plasma cavity; and dynamically adjusting a control signal of a power supply generating the bias voltage based on the detection data of the control variable, and adjusting the radio frequency power waveform to control ion energy distribution and compensate for the charge accumulation effect in real time. According to the invention, independent and accurate control of ion energy and ion flux is realized, and the problems of non-uniform process and device damage caused by wide ion energy distribution, double peaks and charge accumulation in traditional radio frequency bias are solved.

A susceptor assembly for a reactor system may provide various plasma control benefits. The susceptor assembly includes a body, a heater element, a first electrode, and a second electrode, according to various embodiments. The body may have a top surface, a side surface, and a bottom surface, wherein the top surface is a substrate support surface. The heater element may be embedded within the body. The first and second electrodes may also be embedded within the body of the susceptor assembly, with the first electrode disposed between the heater element and the top surface of the body. The second electrode may be generally disposed proximate at least one of the side surface and the bottom surface.

An apparatus for plasma control is disclosed. The apparatus comprises: a plasma generator comprising two electrodes, an anode and a cathode, configured to produce a plasma between the two electrodes; a solenoid coil disposed to surround the plasma and configured to produce a magnetic field parallel to a longitudinal axis between the two electrodes; and circuitry configured for allowing independent timing of the magnetic field with respect to the production of the plasma. A method for plasma control in a spectroscopy system and an optical emission spectrometer using said method are also disclosed.

The present invention relates to a substrate treating apparatus. According to one embodiment of the present invention, a substrate treating apparatus comprises: a chamber; a susceptor located at an inner side of the chamber to support a substrate subject to a process; an electrode plate having a pre-set area and located at an upper area inside the chamber; an RF power supply providing power for plasma generation and connected to the susceptor; and a plasma control member located on a branched conducting wire branching from a conducting wire, through which the RF power supply is connected to the susceptor, and grounded.

A neural network-guided method for precise control of material modification, relating to the field of material modification technology, addresses the problem of uneven surface modification caused by the inability of existing plasma modification techniques to precisely control plasma parameters for nonlinear phase transitions in microstructures. This invention first obtains the initial state parameters and target modification parameters of the material to be modified; then, the obtained parameters are input into a pre-trained neural network model to generate preliminary and high-precision plasma control parameters; next, the operating parameters of the plasma device are controlled by a control unit to modify the material; finally, the state parameters of the material are collected in real time during the modification process, and these real-time state parameters are used as feedback input to the neural network model to dynamically update the plasma control parameters. This invention enables precise and adaptive control of plasma material modification to address nonlinear phase transitions in microstructures.

An apparatus for controlling plasma characteristics includes one or more processors, and a storage medium storing computer-readable instructions. When executed by the one or more processors, the computer readable instructions are configured to cause the one or more processors to obtain an equivalent circuit as seen from a non-sinusoidal generator for applying a plasma control voltage to an electrostatic chuck disposed in a processing space of the processing chamber; and controls the characteristics of the plasma generated in the processing space on the basis of the obtained equivalent circuit. A characteristic of the plasma includes at least one of a first sheath thickness from the substrate to the plasma, and a second sheath thickness from a showerhead that injects a process gas into the processing space to the plasma.

The invention relates to the technical field of plasma control simulation platforms, in particular to a reinforcement learning training method for a plasma control simulation platform. According to the technical scheme, the method comprises the following steps that a plasma response model is constructed in a plasma control simulation verification platform, and the plasma response model is integrated with a plasma control special module in a visual modeling mode; designing a reinforcement learning interface, wherein the interface comprises an independent simulation engine and a reinforcement learning signal interaction module; and the independent simulation engine is packaged into a class which can be separated from the plasma to control the simulation verification platform frame to operate independently. By packaging an independent simulation engine, designing a standardized reinforcement learning interface and being compatible with a Gym environment, the training efficiency, flexibility and universality are remarkably improved, rapid construction of a high-fidelity simulation environment is supported, a high-precision controller is generated, the problems that a traditional platform algorithm is limited in updating and long in training time are solved, and the training efficiency is improved. The method is suitable for various control scenes in the fusion device.

The invention discloses a plasma state active control platform and method based on an orbital angular momentum electromagnetic field, and belongs to the technical field of plasma control. The platform comprises an orbital angular momentum electromagnetic field generation module, an energy and mode coupling module, a plasma region, a plasma state sensing module and a feedback control module. All the modules jointly form a closed-loop control structure, and through angular momentum exchange between an orbital angular momentum electromagnetic field and plasmas, active regulation and control over the macroscopic state, spatial distribution or statistical characteristics of the plasmas are achieved. The method does not depend on a specific device structure, a working frequency band or an implementation mode, has the advantages of being high in response speed, high in control dimension, high in adaptability and the like, and is suitable for a magnetic confinement nuclear fusion device, industrial plasma processing equipment and other plasma systems.

The invention relates to a plasma vertical displacement control method and device, equipment, a medium and a product, relates to the technical field of plasma control, and can timely inhibit the instability of plasma vertical displacement and improve the reliability of plasma vertical displacement control. The method comprises the following steps: in response to a data stream sent by a data acquisition unit through a circuit board-level data bus, carrying out parallel calculation and fusion on the data stream and a current of a plasma in the Tokamak device based on a set estimation matrix to obtain a vertical position estimation result of the plasma; the data stream is used for reflecting magnetic field information of the plasma; determining a control signal for the fast control power supply end according to the vertical position estimation result; the control signal is transmitted to a fast control power supply end; and the fast control power supply end is used for generating a control magnetic field for controlling the vertical displacement of the plasma according to the control signal.

The invention discloses an adaptive control method and system for a remote plasma source, and relates to the related technical field of plasma control, and the method comprises the steps: carrying out the multi-stage control mining of the remote plasma source according to the semiconductor etching task information; performing multi-stage cooperative control analysis according to the multi-stage control trigger space; according to the etching risk factors, an etching risk assessment channel is built, and simulation optimization is carried out on the plasma source control first group; performing comprehensive risk optimization on the plasma source control second group according to the etching comprehensive risk constraint; and according to the plasma source, controlling the third group to carry out multi-round variation joint optimization, obtaining a plasma source control strategy and carrying out adaptive control on the remote plasma source. The technical problems of insufficient multi-stage etching process cooperative control, weak etching risk dynamic evaluation capability and low parameter optimization efficiency in the prior art are solved, and the technical effects of improving the adaptability, stability and process yield of remote plasma source control are achieved.

The utility model discloses a plasma control cabinet for thermal spraying, which comprises a plasma control cabinet, the two sides of the bottom of the plasma control cabinet are provided with grooves, the inner wall of one side of each groove is provided with a sliding groove, a sliding block is installed in each sliding groove in a sliding mode, one end of each sliding block extends into the corresponding sliding groove, and the other end of each sliding block extends into the corresponding sliding groove. The other end of the sliding block extends out of the sliding groove, a fixed block is fixedly installed at the end, extending out of the sliding groove, of the sliding block, an open groove is formed in the bottom of the fixed block, rotating grooves are formed in the inner walls of the two sides of the open groove, rotating blocks are rotationally installed in the rotating grooves, one end of each rotating block extends into the corresponding rotating groove, and the other end of each rotating block extends into the corresponding open groove; a rotating wheel is fixedly installed at the end, extending into the open groove, of the rotating block. According to the plasma control cabinet, the rotatable rotating wheels are arranged at the bottom of the plasma control cabinet, so that when the plasma control cabinet needs to be moved, the rotating wheels slide out of the grooves, and the plasma control cabinet can be easily moved.

The invention discloses a laser coherent combination method and system based on a plasma self-imaging waveguide, relates to the technical field of laser coherent combination, and can improve the coherent combination effect and realize the technical breakthrough of coherent combination. The system comprises a synthesis laser seed module, a laser beam splitting amplification module, a laser plasma waveguide coupling module, a plasma capillary air chamber module, a plasma control module, a plasma waveguide self-imaging synthesis module and a plasma waveguide self-imaging length feedback control module. By adopting the system, the specific structure of the plasma waveguide and the specific distribution of the high-energy laser regulation and control plasma can be utilized to efficiently guide multiple beams of high-energy laser, so that a breakthrough coherent combination effect is realized. The invention also discloses a method for performing coherent combination by using the system.

A plasma control apparatus may include a first power source configured to generate an RF signal, a second power source configured to generate a non-sinusoidal wave signal, a third power source configured to generate a direct current signal, and a mixer configured to generate an output signal based on the RF signal, the non-sinusoidal wave signal, and the DC signal, and provide the output signal to a lower electrode inside an electrostatic chuck (ESC) of a processing chamber.

A compression corner shock wave / boundary layer interference model is provided, with a design state Mach number between Mach 1 and 5; an artificial transition zone is installed upstream of the separation zone; a U-shaped electrode cover is inserted into the interior of the insulating material; an array of grooves of the same size is opened on the upper surface of the insulating material to install the U-shaped electrode cover; two rows of grooves are arranged along the flow direction on the surface of the insulating material; each row of grooves includes multiple grooves evenly distributed along the flow direction, and the same spacing is maintained between adjacent grooves; cylindrical stepped holes are provided at the outward extensions of both ends of each row of grooves. A method for regulating shock wave boundary layer interference by multi-channel plasma is also provided. The present invention arranges a multi-channel plasma array in front of the separation zone, and utilizes the strong impact effect and thermal effect of high-energy plasma to generate a continuous impact disturbance effect on the wave system structure, forming a hot air mass to regulate the near-wall shock wave, thereby reducing the influence of the adverse pressure gradient on the boundary layer, improving the low-frequency instability of the shock wave, and slowing down the flow separation induced by the shock wave / boundary layer interference.