107 results about "Plasma control" patented technology

A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.

A dielectric etch chamber and method for improved control of plasma parameters. The plasma chamber comprises dual-frequency bias source that capacitively couples the RF energy to the plasma, and a single or dual frequency source that inductively couples the RF energy to the plasma. The inductive source may be modulated for improved etch uniformity.

A production device and method which produce a multiple-system film having metal components such as TiAlN greatly different in melting point by a melting-evaporation type ion plating method that provides a high material utilization efficiency and a good film quality. Power needed to evaporate a material (4) is first supplied, and then power gradually increased over the initail power is repeatedly supplied until a needed maximum power is reached. Concurrently, a plasma control is performed for converging plasma (7) onto an initial area needed to evaporate the material, and then a plasma control is performed for continuously and sequentially moving/expanding plasma from the initial plasma area up to a maximum plasma area to thereby gradually melt the non-melted portion of the material.

The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas.

The invention discloses a TiC/metal composite fusing coating producing method for original position controlled by plasma, which comprises the following steps: allocating precoating material; allocating graphite and titanium powder with ferric base or nickel base or cobalt base powder according to the chemical metering rate of TiC as precoating paint; blending organic adhesive evenly through two-step method or synchronous powder sending method; coating composite material on the metal surface; scanning the metal surface continuously of precoating composite paint through plasma; fusing to obtain continuous or single-way fusing layer on the metal surface.

Plasma treatment apparatus and method for treating a substrate (6, 7) e.g. for deposition of a layer on the substrate (6, 7). Two opposing electrodes (2, 3) and a treatment space (5) are provided. A dielectric barrier (6, 7; 2a, 3a), comprising in operation the substrate, is provided in the treatment space (5) between the at least two opposing electrodes (2, 3) which are connected to a plasma control unit (4). A gap distance (g) is the free distance in the treatment space (5) of a gap between the at least two opposing electrodes (2, 3) in operation. A total dielectric distance (d) is the sum of the dielectric thickness of the dielectric layers (2a, 3a) and the substrate (6, 7). The product of gap distance (g) and total dielectric distance (d) is controlled to a value less than or equal to 1.0 mm².

Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.

The invention relates to a plasma-based aircraft aerodynamic characteristic analysis method. According to the method, the lift coefficient is improved and the drag coefficient is reduced based on the dielectric barrier discharge (DBD) plasma control technology. The lift-drag ratio of an aircraft is improved and the aerodynamic characteristic performance of the aircraft is improved. Furthermore, in the dielectric barrier discharge (DBD) plasma condition, the aerodynamic characteristics of the surface of the aircraft can be analyzed and obtained.

There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.

A printing apparatus includes: a plasma processing unit that performs plasma processing on a processing target surface side of a processing object; a recording unit that ejects ink on the processing target surface side of the processing object; an acquiring unit that acquires setting information, in which an adjustment target area for adjusting surface roughness and surface roughness of the adjustment target area on a surface of an ink layer formed with the ink are set; and a plasma control unit that controls the plasma processing unit to perform plasma processing on a processing area corresponding to the adjustment target area, on the processing target surface side of the processing object, with an amount of plasma energy for obtaining the set surface roughness on the surface of the ink layer formed on the processing area.

Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

The invention relates to an anti-fingerprint spray coating method and equipment. The equipment comprises a case, a plasma cleaning linear module and a spray gun linear module, wherein the case is arranged on a material conveying mechanism, the case is provided with a feed inlet and a discharge outlet, and the plasma cleaning linear module and the spray gun linear module are arranged in the case; the plasma cleaning linear module comprises a first guide rail arranged above the conveying trajectory of the material conveying mechanism, a first sliding block, a first motor and a plasma cleaning head connected with a plasma controller, wherein the plasma cleaning head is connected with the first sliding block; the spray gun linear module comprises a second guide rail arranged above the conveying trajectory, a second sliding block, a second motor and a coating feed device connected with a spray coating liquid storage device through a connecting pipe, wherein the coating feed device is provided with a spray gun head and the is connected with the second sliding block. The anti-fingerprint spray coating method and equipment have the advantages that the structure is simple, the production cost is low, the production efficiency is high, the cleaning is thorough, the quality of the produced product is high, the spray coating is uniform, the method and equipment can be widely popularized and the like.

There is provided a plasma generation device capable of generating spatially uniform and high-density plasma This is achieved as follows. A plurality of antennas (16) are provided on the side wall of a vacuum vessel (11) and one high-frequency power source is connected for three to four antennas (16) in parallel via a plate-shaped conductor (19). The conductor of each antenna (16) has a length smaller than 1/4 of the wavelength of the induction electromagnetic wave generated in the vacuum vessel. By defining the length of the antenna conductor in this way, it is possible to prevent generation of a standing wave and prevent deterioration of uniformity of plasma in the vacuum vessel. Moreover, by using the plate-shaped conductor (19), it is possible to effectively release heat, thereby suppressing increase of the impedance.

A plasma control apparatus includes a power source unit, a resonance producing unit, and a voltmeter. The resonance producing unit includes an LC circuit formed by a coil L1 and a capacitor C1 connected to each other, and a sensor S2 configured to detect a phase difference between current flowing in and voltage applied to the LC circuit, and the capacitor C1 of the LC circuit has a capacitance larger than an expected capacitance of the plasma P. The power source unit 1 configured to control the magnitude of radio-frequency power to be supplied in such a manner as to bring the voltage measured with the voltmeter 5 close to a set voltage as a target, and controls the frequency of the radio-frequency power to be supplied in such a manner as to minimize the phase difference detected with the sensor S2.

A plasma processing device according to the present invention includes a plasma processing chamber, a plasma producing chamber communicating with the plasma processing chamber, a radio-frequency antenna for producing plasma, a plasma control plate for controlling the energy of electrons in the plasma, as well as an operation rod and a moving mechanism for regulating the position of the plasma control plate. In this plasma processing device, the energy distribution of the electrons of the plasma produced in the plasma producing chamber can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate by simply moving the operation rod in its longitudinal direction by the moving mechanism. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.