26 results about "Plasma control" patented technology

The invention discloses a fusion power generation system, a power generation control method, a storage medium and a controller, and relates to the technical field of fusion energy. The fusion power generation system comprises a steam generator set, a plurality of Tokamak devices and a plurality of thermal conversion units, the Tokamak devices and the thermal conversion units are in one-to-one correspondence, each thermal conversion unit is provided with a first channel and a second channel, and the Tokamak devices and the first channels of the corresponding thermal conversion units form a cladding cooling loop. The steam generator set and a plurality of second channels connected in sequence form a power generation loop; wherein the plurality of Tokamak devices are configured to operate in an alternating or complementary manner; the thermal conversion units are configured to receive heat from the corresponding cladding cooling loops and convert working media in the power generation loops into steam through the heat so as to drive the steam generator set to generate power. According to the system, the plurality of Tokamak devices operate in an alternating or complementary mode, so that heat loss can be reduced, the power generation efficiency is improved, and the plasma control difficulty is reduced.

The application relates to a laser-induced silicon carbide wafer crack propagation plasma control method, which comprises the following steps: laser focusing is carried out at a to-be-processed position of a silicon carbide crystal ingot, and a high excitation state plasma is generated in the crystal ingot; after the plasma is generated, an external magnetic field or an electric field is applied to control the movement state of the plasma, so that the crack propagates along a predetermined path and depth; characteristic parameters of the plasma are monitored in real time, data is transmitted to a feedback control system, laser parameters, magnetic field or electric field intensity are dynamically adjusted according to the movement state of the plasma; the crack growth range is expanded through multiple scanning, and wafer peeling is realized. The laser-induced silicon carbide wafer crack propagation plasma control method can effectively control the crack propagation path and depth, avoid the disordered propagation of the crack, greatly reduce the material damage in the silicon carbide wafer processing process, efficiently peel the silicon carbide wafer, improve the processing speed, and improve the quality of the final product.

A plasma processing device comprises a processing container (12), a substrate support part (14), an electromagnetic wave generator (16), a dielectric (20), an electromagnetic wave supply unit (30), a resonator array structure (100), and a control unit (11). The processing container (12) is provided with a first space (S1) and a second space (S2) for generating plasma. The substrate support part (14) supports a substrate (14a). The electromagnetic wave generator (16) generates electromagnetic waves for plasma excitation. The dielectric (20) is provided such that a first surface (20a) thereof faces the interior of the processing container (12). The electromagnetic wave supply unit (30) supplies electromagnetic waves into the processing container (12). The resonator array structure (100) includes a plurality of resonators (101) that are provided between the first space (S1) and the second space (S2), are capable of resonating with a magnetic field component of the electromagnetic waves, are smaller in size than the wavelength of the electromagnetic waves, and are arranged in the same plane direction. The control unit (11) controls generation of plasma in the first space (S1) and the second space (S2). The first space (S1) is a space between the first surface (20a) of the dielectric (20) and the resonator array structure (100), and the second space (S2) is a space between the resonator array structure (100) and the substrate support part (14).

Solid-state switch array apparatus and methods for digitized plasma magneto-inertial fusion are disclosed herein. A solid-state switch array apparatus for enabling discharge of direct current includes multiple solid-state switches arranged in series and parallel configurations. The apparatus includes corresponding series resistor circuits connected in parallel with each solid-state switch to distribute voltage across the switches and receive constant current flow from a power supply during charging. Snubber circuits including capacitors configured in parallel with each solid-state switch protect against transient back electromotive force during discharge. A ferrite core assembly includes wire fed through ferrite cores wound and connected to gates and cathodes of the solid-state switches. The ferrite core assembly delivers voltage pulses to simultaneously transition all switches to a conducting state in response to discharge from a discharge circuit capacitor, enabling control for plasma generation applications.

The application discloses a fusion power generation system, a power generation control method, a storage medium and a controller, and relates to the technical field of fusion energy. The fusion power generation system comprises a steam generator unit, a plurality of tokamak devices corresponding to the steam generator unit in one-to-one correspondence and a plurality of heat conversion units, the heat conversion unit is provided with a first channel and a second channel, the tokamak device and the first channel of the corresponding heat conversion unit form a blanket cooling loop, and the steam generator unit and a plurality of sequentially connected second channels form a power generation loop; wherein the plurality of tokamak devices are configured to operate in an alternating or complementary manner; the heat conversion unit is configured to receive heat from the corresponding blanket cooling loop, and convert the working medium in the power generation loop into steam by using the heat to drive the steam generator unit to generate power. The system can reduce heat loss, improve power generation efficiency and reduce the difficulty of plasma control by operating the plurality of tokamak devices in an alternating or complementary manner.

The invention discloses a waveform-controllable plasma processing method and system, and belongs to the technical field of semiconductor manufacturing processes. Providing a programmable control radio frequency power waveform to a bottom electrode in the plasma cavity as a bias voltage, wherein the programmable control radio frequency power waveform comprises a pulse waveform and a slope waveform; plasma control variables are measured through a sensor arranged at the output end of the plasma cavity; and dynamically adjusting a control signal of a power supply generating the bias voltage based on the detection data of the control variable, and adjusting the radio frequency power waveform to control ion energy distribution and compensate for the charge accumulation effect in real time. According to the invention, independent and accurate control of ion energy and ion flux is realized, and the problems of non-uniform process and device damage caused by wide ion energy distribution, double peaks and charge accumulation in traditional radio frequency bias are solved.

An apparatus for plasma control is disclosed. The apparatus comprises: a plasma generator comprising two electrodes, an anode and a cathode, configured to produce a plasma between the two electrodes; a solenoid coil disposed to surround the plasma and configured to produce a magnetic field parallel to a longitudinal axis between the two electrodes; and circuitry configured for allowing independent timing of the magnetic field with respect to the production of the plasma. A method for plasma control in a spectroscopy system and an optical emission spectrometer using said method are also disclosed.

A neural network-guided method for precise control of material modification, relating to the field of material modification technology, addresses the problem of uneven surface modification caused by the inability of existing plasma modification techniques to precisely control plasma parameters for nonlinear phase transitions in microstructures. This invention first obtains the initial state parameters and target modification parameters of the material to be modified; then, the obtained parameters are input into a pre-trained neural network model to generate preliminary and high-precision plasma control parameters; next, the operating parameters of the plasma device are controlled by a control unit to modify the material; finally, the state parameters of the material are collected in real time during the modification process, and these real-time state parameters are used as feedback input to the neural network model to dynamically update the plasma control parameters. This invention enables precise and adaptive control of plasma material modification to address nonlinear phase transitions in microstructures.

The invention discloses a plasma state active control platform and method based on an orbital angular momentum electromagnetic field, and belongs to the technical field of plasma control. The platform comprises an orbital angular momentum electromagnetic field generation module, an energy and mode coupling module, a plasma region, a plasma state sensing module and a feedback control module. All the modules jointly form a closed-loop control structure, and through angular momentum exchange between an orbital angular momentum electromagnetic field and plasmas, active regulation and control over the macroscopic state, spatial distribution or statistical characteristics of the plasmas are achieved. The method does not depend on a specific device structure, a working frequency band or an implementation mode, has the advantages of being high in response speed, high in control dimension, high in adaptability and the like, and is suitable for a magnetic confinement nuclear fusion device, industrial plasma processing equipment and other plasma systems.

The invention relates to a plasma vertical displacement control method and device, equipment, a medium and a product, relates to the technical field of plasma control, and can timely inhibit the instability of plasma vertical displacement and improve the reliability of plasma vertical displacement control. The method comprises the following steps: in response to a data stream sent by a data acquisition unit through a circuit board-level data bus, carrying out parallel calculation and fusion on the data stream and a current of a plasma in the Tokamak device based on a set estimation matrix to obtain a vertical position estimation result of the plasma; the data stream is used for reflecting magnetic field information of the plasma; determining a control signal for the fast control power supply end according to the vertical position estimation result; the control signal is transmitted to a fast control power supply end; and the fast control power supply end is used for generating a control magnetic field for controlling the vertical displacement of the plasma according to the control signal.

The utility model discloses a plasma control cabinet for thermal spraying, which comprises a plasma control cabinet, the two sides of the bottom of the plasma control cabinet are provided with grooves, the inner wall of one side of each groove is provided with a sliding groove, a sliding block is installed in each sliding groove in a sliding mode, one end of each sliding block extends into the corresponding sliding groove, and the other end of each sliding block extends into the corresponding sliding groove. The other end of the sliding block extends out of the sliding groove, a fixed block is fixedly installed at the end, extending out of the sliding groove, of the sliding block, an open groove is formed in the bottom of the fixed block, rotating grooves are formed in the inner walls of the two sides of the open groove, rotating blocks are rotationally installed in the rotating grooves, one end of each rotating block extends into the corresponding rotating groove, and the other end of each rotating block extends into the corresponding open groove; a rotating wheel is fixedly installed at the end, extending into the open groove, of the rotating block. According to the plasma control cabinet, the rotatable rotating wheels are arranged at the bottom of the plasma control cabinet, so that when the plasma control cabinet needs to be moved, the rotating wheels slide out of the grooves, and the plasma control cabinet can be easily moved.

The invention discloses a laser coherent combination method and system based on a plasma self-imaging waveguide, relates to the technical field of laser coherent combination, and can improve the coherent combination effect and realize the technical breakthrough of coherent combination. The system comprises a synthesis laser seed module, a laser beam splitting amplification module, a laser plasma waveguide coupling module, a plasma capillary air chamber module, a plasma control module, a plasma waveguide self-imaging synthesis module and a plasma waveguide self-imaging length feedback control module. By adopting the system, the specific structure of the plasma waveguide and the specific distribution of the high-energy laser regulation and control plasma can be utilized to efficiently guide multiple beams of high-energy laser, so that a breakthrough coherent combination effect is realized. The invention also discloses a method for performing coherent combination by using the system.

There is a plasma processing apparatus comprising: a processing chamber having a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation; a dielectric having a first surface; an electromagnetic wave supply part configured to supply the electromagnetic waves to the processing space via the dielectric; and a resonator array structure disposed along the first surface of the dielectric, wherein the resonator array structure includes a plurality of resonators, each resonator having a structure in which a conductive member is laminated on one surface of a dielectric plate, having a first resonance frequency, capable of resonating with magnetic field components of the electromagnetic waves and having a size smaller than a wavelength of the electromagnetic waves, and the resonator array structure is configured to form cells surrounded by the resonators, and the cells include the resonators having different first resonance frequencies between the cells.

The application relates to a plasma vertical displacement control method, device, equipment, medium and product, relates to the technical field of plasma control, and can timely inhibit the instability of plasma vertical displacement and improve the reliability of plasma vertical displacement control. The method comprises the following steps: in response to a data stream sent by a data acquisition unit through a circuit board level data bus, performing parallel calculation and fusion on the data stream and the current of plasma in a tokamak device based on a set estimation matrix to obtain a vertical position estimation result of the plasma; the data stream is used for reflecting magnetic field information of the plasma; a control signal for a fast control power supply end is determined according to the vertical position estimation result; the control signal is transmitted to the fast control power supply end; the fast control power supply end is used for generating a control magnetic field for controlling the vertical displacement of the plasma according to the control signal.

The utility model relates to a radio frequency circuit for generating ionization waves in inert gas, belongs to the crossing field of plasma control technology and radio frequency circuits, and aims to solve the problems of high observation cost, difficulty in continuous observation, difficulty in decoupling influence of various parameters and the like in the conventional ionization wave research method. Comprising an over-current protection module, a constant-current control module, a self-oscillation network, a bias control module and a modulation signal generator, and is combined with a transparent closed container filled with low-pressure xenon / krypton / argon. The constant current technology stabilizes current, electromagnetic coupling parameters are independently adjustable, modulation signals are forced to intermittently oscillate, visual ionization waves are formed in the container, the circuit state is monitored in real time through a non-contact detection network, the problems that in the prior art, equipment is complex, parameters are coupled, and observation cost is high are solved, and the ionization wave research device and method are simplified.

The application discloses a design method of a plasma control algorithm based on an AI intelligent agent, belongs to the technical field of plasma control, and comprises the following steps: constructing an original data set for a plasma control algorithm development scene; performing data set cleaning and format processing to construct a special fine-tuning data set; selecting a code special base model; performing field adaptation training of the base model based on a low-rank self-adaptive supervision fine-tuning method; after the training is completed, combining the low-rank self-adaptive adapter weight and the base model to generate a PCS field special fine-tuning model weight; performing multi-dimensional evaluation and iterative optimization of the PCS field special fine-tuning model; and constructing an intelligent agent tool chain and an intelligent agent interaction logic. The application realizes end-to-end automatic generation of the core logic of the plasma control algorithm, shortens the typical development cycle from several days to several hours, and greatly reduces the threshold of prior knowledge.

The application discloses a kind of etching and cleaning equipment of large-area TGV glass surface and deep hole inner wall, belong to semiconductor etching and cleaning equipment technical field.The technical problem to be solved is that existing equipment exists uneven plasma distribution, low density and poor deep hole etching effect when processing large-area substrate.Technical solution points are that the equipment includes a main processing chamber with a capacitively coupled plasma (CCP) reaction chamber as the core, and a remote inductively coupled plasma (ICP) source located outside the chamber, and is provided with one or more dedicated pipelines to directly transport and inject high-density plasma generated by the ICP source into the periphery of the CCP processing area.This design can accurately compensate for the plasma density decay at the edge of the substrate, achieving a synergistic effect of center and edge plasma control, and improving the etching and cleaning rate and uniformity of large-area.

The ability to switch between radical treatment and plasma treatment. [Solution] The plasma processing apparatus comprises a processing vessel, a substrate support, an electromagnetic wave generator, a dielectric, an electromagnetic wave supply unit, a resonator array structure, and a control unit. The processing vessel includes a first space and a second space for generating plasma. The substrate support unit supports the substrate. The electromagnetic wave generator generates electromagnetic waves for plasma excitation. The dielectric is provided with its first surface facing the inside of the processing vessel. The electromagnetic wave supply unit supplies electromagnetic waves into the processing vessel. The resonator array structure is provided between the first space and the second space and includes a plurality of resonators that are resonant with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane. The control unit controls the generation of plasma in the first space and the second space. The first space is the space between the first surface of the dielectric and the resonator array structure, and the second space is the space between the resonator array structure and the substrate support unit.

A system for a thermonuclear fusion reactor having a feeder configured to introduce a fuel projectile into a contained plasma is described. The system includes one or more lasers for adjusting a propulsion force of the fuel projectile by laser ablation and a controller configured to operate in conjunction with the feeder and the one or more lasers to controllably propel the fuel projectile toward a target location in the contained plasma. This contrasts with existing systems (e.g., fuel projectiles simply follow the magnetic field gradient of the plasma), and may enhance plasma control to achieve improved stability and generation of thermonuclear fusion energy, modulate the fusion rate and the amount of energy generated by the reactor, and improve the performance of the reactor. Plasma current is adjusted to alter the magnetic field and generate electrical power by magnetic induction, and / or have other advantages alone or in combination with existing systems.

This invention belongs to the field of nuclear fusion technology and discloses a tokamak plasma vertical displacement control method based on reinforcement learning. The technical solution includes the following steps: S1, obtaining tokamak vertical displacement data and tokamak IC coil current data as the current state vector; S2, obtaining tokamak vertical displacement data, tokamak IC coil current data, and voltage data as historical state vectors; S3, inputting the current state vector and historical state vectors into the trained vertical displacement controller, which outputs the IC coil voltage value; S4, inputting the voltage value from S3 as a control command into the control system to complete the control of the plasma vertical displacement. This invention uses reinforcement learning to train the tokamak plasma vertical displacement controller, improving the reliability of control and promoting related research on plasma control in the field of nuclear fusion.

A technique of configuring a multi-variable control system, in which the control system is constructed from a hierarchy of perceptual control units and the configuration optimizes the hierarchy using an evolutionary algorithm. A perceptual control system configured in this manner can automatically configure itself to achieve optimal performance, leading to applications in a number of technical fields associated with complex multi-variable systems, such as energy management systems, nuclear fusion plasma control and robotics.

According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.

The application discloses a heavy diesel fairing gluing and bonding equipment and a control method thereof, and technical scheme points of the equipment are as follows: the equipment comprises a rack, an electric control cabinet, a plasma controller, a pressing mechanism, a bearing mechanism, a glue spraying mechanism and a glue melting mechanism; the pressing mechanism is arranged at the top end of the rack; the pressing mechanism comprises lifting oil cylinders, overturning oil cylinders, a hydraulic station and an upper die; the lifting oil cylinders and the overturning oil cylinders are fixed on the upper die; the hydraulic station is fixed on the top of the rack; the pressing mechanism is used for bonding a base material; the bearing mechanism is arranged at the bottom end of the rack; the bearing mechanism is used for bearing a base plate; the glue spraying mechanism is arranged on the side wall of the rack; the glue spraying mechanism is a six-axis robot; a glue gun and a plasma head are arranged on the six-axis robot; the glue melting mechanism comprises a fan, a heating module and an air duct; the air duct comprises an air duct body and an air inlet pipeline; temperature sensors and air outlets are arranged on the air duct body; a safety light curtain is arranged on the rack; and a safety fence is arranged on the top side of the rack.

A plasma processing apparatus using a magnetic field includes a reaction chamber, a plasma generating device connected to the reaction chamber to generate plasma in the reaction chamber, a substrate support disposed in a lower portion in the reaction chamber to support a wafer to be etched by the plasma, and a magnetic module including a permanent magnet and an electromagnet disposed vertically above the reaction chamber and a DC power supply unit connected to the electromagnet to input power to the electromagnet.

Disclosed in the present application are a semiconductor processing device, an ignition-of-plasma control method and a related apparatus. In the semiconductor processing device, during ignition of plasma, a processing gas is first supplied to a processing chamber, and a direct-current voltage is applied to a target electrode, so as to form a target electric field; and the target electric field is used to accelerate charged particles, such that the free charged particles in the processing chamber obtain energy and then bombard the processing gas to form a first plasma, thereby completing a pre-ignition-of-plasma process. In an initial phase of plasma discharge, electrons having relatively high energy are mainly required. Therefore, by means of using the target electric field, which is formed by the direct-current voltage, to accelerate the charged particles, the charged particles can obtain relatively high energy, thereby facilitating an improvement in the success rate of ignition of plasma. In addition, other hardware structures, such as a matcher, are not required when the direct-current voltage is applied to the electrode, thereby having the characteristics of simplicity and ease of implementation. Once pre-ignition-of-plasma is completed, the application of the direct-current voltage to the target electrode can be stopped, and radio frequency power is supplied to the processing chamber, thereby completing a full ignition-of-plasma and processing process.

An RC IGBT includes an active region with an IGBT section and a diode section. In a plurality of control trenches of the RC IGBT, there are a plurality of IGBT control electrodes and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes, each of the IGBT control electrodes and plasma control electrodes being electrically isolated from both load terminals of the RC IGBT. The IGBT section includes both a first subset of the IGBT control electrodes and a first subset of the plasma control electrodes. The diode section includes a second subset of the plasma control electrodes.