Plasma generation device, plasma control method, and substrate manufacturing method

A plasma and generation device technology, which is applied in the fields of plasma, semiconductor/solid-state device manufacturing, and the method of chemically changing substances by using atmospheric pressure, which can solve problems such as damage to plasma uniformity

Active Publication Date: 2006-01-25
JAPAN SCI & TECH CORP +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, if a standing wave of the induced electromagnetic field radia...

Method used

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  • Plasma generation device, plasma control method, and substrate manufacturing method
  • Plasma generation device, plasma control method, and substrate manufacturing method
  • Plasma generation device, plasma control method, and substrate manufacturing method

Examples

Experimental program
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Effect test

no. 1 Embodiment

[0076] Respectively figure 1 shows a cross-sectional view in the vertical direction of the first embodiment of the plasma generation device of the present invention, in figure 2 shows a side view of the device, the image 3 A plan view of the device is shown in .

[0077] The inside of the vacuum vessel 11 constitutes a plasma generation chamber of the plasma generation device. Vacuum container 11 inside such as image 3 As shown, the planar shape is a rectangle (rectangle), the length of its long side is 130mm, and the length of its short side is 100mm. A vacuum pump (not shown) is connected to the vacuum container 11 to maintain the inside of the vacuum container 11 at a predetermined vacuum degree. A rectangular planar substrate table 14 with a long side of 94 cm and a short side of 76 cm for loading a substrate 13 to be processed is provided in the vacuum container 11 . The substrate table 14 can be raised and lowered by a lifting unit 14a provided at the lower part ...

no. 2 Embodiment

[0092] In the second embodiment, the configuration of the plasma generation device focusing on the aspect ratio of the antenna will be described.

[0093] Figure 10 A plan view of the second embodiment is shown in . In this plasma generation device, only the aspect ratio of the antenna 26 in the device configuration of the first embodiment is changed. Thus, in Figure 10 In, the same constituent elements as those of the first embodiment are added with image 3 same symbol. The number of high-frequency power sources and the number of antennas connected to each high-frequency power source are also the same as those in the first embodiment. In the device shown in this figure, if Figure 11 As shown in (a), the aspect ratio of all the antennas 26 is set to 2 (vertical:horizontal=2:1). Additionally, if Figure 11 As shown in (b), the aspect ratio of the antenna 16 of the first embodiment is 1 (vertical:horizontal=1:1). The area S of the conductor-enclosed region of the ant...

no. 3 Embodiment

[0101] In the third embodiment, the configuration of the plasma generation device focusing on the polarities of adjacent electrodes of adjacent antennas will be described.

[0102] Figure 16 A plan view of the third embodiment is shown in . Adding and image 3 same symbol. The number of high-frequency power sources and the number of antennas connected to each high-frequency power source are the same as those in the first embodiment. In this plasma generating apparatus, only the electrode polarities of the high-frequency antennas 16 in the apparatus configuration of the first embodiment are changed. Specifically, in an antenna group composed of three or four antennas installed on the same side wall, adjacent electrodes of adjacent high-frequency antennas are set to have the same polarity. For example, in the antenna group 31a, the electrodes on the adjacent sides of the adjacent high-frequency antenna 16a and high-frequency antenna 16b are all connected to the impedance in...

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Abstract

There is provided a plasma generation device capable of generating spatially uniform and high-density plasma This is achieved as follows. A plurality of antennas (16) are provided on the side wall of a vacuum vessel (11) and one high-frequency power source is connected for three to four antennas (16) in parallel via a plate-shaped conductor (19). The conductor of each antenna (16) has a length smaller than 1/4 of the wavelength of the induction electromagnetic wave generated in the vacuum vessel. By defining the length of the antenna conductor in this way, it is possible to prevent generation of a standing wave and prevent deterioration of uniformity of plasma in the vacuum vessel. Moreover, by using the plate-shaped conductor (19), it is possible to effectively release heat, thereby suppressing increase of the impedance.

Description

technical field [0001] The present invention relates to a plasma generation device for producing substrates such as semiconductors by using plasma to deposit or etch the surface of a substrate to be processed. In particular, it relates to a technique for producing large-area substrates by uniformly generating plasma over a large area. Background technique [0002] In recent years, polysilicon TFT-LCDs capable of displaying images with higher luminance than TFT (Thin Film Transistor)-LCDs using amorphous silicon films have attracted attention. The polysilicon TFT-LCD is first manufactured with a polysilicon substrate in which a polysilicon thin film is formed on a glass substrate. This polysilicon substrate area is divided into a plurality of two-dimensionally arranged pixel regions, and thin film transistors (TFTs) are formed in each pixel region to form a substrate for LCD. In order to manufacture a large-area polysilicon TFT-LCD, a polysilicon substrate having high quali...

Claims

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Application Information

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IPC IPC(8): H05H1/46H01L21/3065H01L21/205C23C14/54B01J3/00B01J19/08C23C16/509
Inventor 三宅正司江部明宪庄司多津男节原裕一
Owner JAPAN SCI & TECH CORP
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