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Plasma processing apparatus and plasma control method

By arranging a hollow cathode on the inner wall of the plasma processing device and adjusting the sheath voltage, the problem of uncontrollable plasma density is solved, achieving uniform plasma distribution and uniform processing of substrates.

Active Publication Date: 2012-03-14
TOKYO ELECTRON LTD
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  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Therefore, the plasma density in the chamber becomes non-uniform, and as a result, there is a problem that uniform plasma processing cannot be performed on the substrate.

Method used

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  • Plasma processing apparatus and plasma control method
  • Plasma processing apparatus and plasma control method
  • Plasma processing apparatus and plasma control method

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Embodiment Construction

[0051] Next, a first embodiment of the present invention will be described in detail with reference to the drawings.

[0052] figure 1 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus according to the first embodiment of the present invention. In this plasma processing apparatus, for example, predetermined plasma processing such as etching or film formation is performed on a semiconductor wafer (hereinafter simply referred to as "wafer").

[0053] exist figure 1 Among them, the plasma processing apparatus 10 has a processing chamber (chamber) 11 for accommodating a substrate (hereinafter simply referred to as “wafer”) W, and a columnar susceptor 12 on which the wafer W is placed is disposed in the chamber 11 . The side exhaust passage 13 is formed by the inner wall of the chamber 11 and the side surface of the base 12 . An exhaust plate 14 is arranged in the middle of the side exhaust passage 13 .

[0054] The exhaust plate 14 ...

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Abstract

There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber (11) for performing a plasma process on a wafer (W); a susceptor (12) for mounting the wafer (W) within the chamber (11); an upper electrode plate (30a) facing the susceptor (12) with a processing space (S); a high frequency power supply (20) for applying a high frequency power to one of the susceptor (12) and the upper electrode plate (30a) to generate plasma within the processing space (S); and an inner wall member facing the processing space (S). Hollow cathodes (31a to 31c) are formed at the upper electrode plate (30a) connected with a DC power supply (37) for adjusting a sheath voltage.

Description

technical field [0001] The present invention relates to a plasma processing apparatus and a plasma control method capable of arbitrarily controlling plasma distribution in a processing chamber. Background technique [0002] There is known a plasma processing apparatus which uses semiconductor devices and liquid crystal display devices [0003] In the manufacturing process of FPD (Flat Panel Display: Flat Panel Display) represented by (LCD), plasma treatment is performed on various substrates mainly glass substrates. Plasma processing apparatuses can be broadly classified into capacitive coupling type plasma processing apparatuses and inductively coupling type plasma processing apparatuses according to different methods of generating plasma. [0004] As a typical example of a capacitively coupled plasma processing device (hereinafter referred to as "CCP processing device"), for example, two electrode plates are installed in a processing chamber (chamber), and one of the two ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H05H1/46
CPCH01J37/32091H01J37/32596H01J37/32697
Inventor 輿水地盐传宝一树
Owner TOKYO ELECTRON LTD
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