The invention discloses a
semiconductor probe card electrical parameter extraction method and
system based on an MEMS technology, and relates to the technical field of
semiconductor testing, the method comprises the following components: initialization setting: aligning an MEMS
probe card to a target test area on a
wafer to be tested, firmly fixing the
probe card and the
wafer together by using a mechanical clamping device, and setting the MEMS probe card and the
wafer to be tested; by integrating the
decision tree model and the
genetic algorithm, accurate mapping and optimization of
semiconductor wafer surface features and optimal probe contact parameters are achieved, the intelligent level of testing is improved, the test time is shortened, the
test efficiency is improved, and the test cost is reduced. The self-adaptability and stability of the testing process are remarkably enhanced, real-time adjustment of probe contact parameters is ensured through a
dynamic monitoring and closed-
loop control mechanism, the testing error is effectively reduced, the testing precision is improved, the optimal contact parameter combination is found through an optimization
algorithm, the testing period is further shortened, and the testing efficiency is improved.