5results about How to "Lower junction capacitance" patented technology

This disclosure provides a photodetector. The detector includes a substrate and, sequentially stacked on the substrate surface, an N-type doped layer, an absorption region, a P-type doped layer, and a converging structure. The first cross-sectional area of ​​the absorption region along the direction parallel to the substrate surface is smaller than the second cross-sectional area of ​​the P-type doped layer parallel to the substrate surface; the surface of the P-type doped layer away from the absorption region is a photosensitive surface. The converging structure is used to focus incident light from the photosensitive surface to the absorption region, so that the photodetector converts the incident light into an electrical signal. This detector can simultaneously achieve high responsivity and high bandwidth.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The application relates to the technical field of semiconductor optoelectronic devices, in particular to a matrix-integrable structure of a high-speed InGaAs PD detection chip and a preparation method thereof. The structure comprises a semi-insulating InP substrate, a first n-InP layer, an intrinsic InGaAs layer and a p+ InP layer which are sequentially formed on the substrate, a photosensitive surface region is arranged in the p+ InP layer, the p+ InP layer outside the photosensitive surface region is removed, and the intrinsic InGaAs layer is exposed, a second n-InP layer is formed on the exposed intrinsic InGaAs layer through secondary epitaxy, and the second n-InP layer is electrically connected with the first n-InP layer. The application limits the PN junction in the photosensitive surface through secondary epitaxy, significantly reduces the capacitance to 0.05 pF, the dark current is less than 50 pA, the responsivity is higher than 0.95 A / W, and the matrix integration is easy to realize, and the application is suitable for high-speed optical communication above 50G.

This application discloses a high-performance laser detection system, a laser detection data analysis method, and an apparatus, relating to the field of laser testing. The system includes: a laser, two optical lens groups, a fiber optic cone, a photodetector, and a signal processing circuit. The laser and the two optical lens groups work together to form two laser screens. The fiber optic cone is coupled to the surface of the photodetector. The photodetector detects the laser signals passing through the two laser screens. The signal processing circuit amplifies the electrical signals using a hyperbolic tangent amplifier circuit to obtain the original laser screen signals. The method includes: sequentially filtering, fragment identification, zero-time explosion identification, and cross-screen matching of the original laser screen signals, and outputting fragment signal matching pairs and their corresponding velocities. This application improves the response speed and dynamic range of the detected light intensity of the laser detection system, while simultaneously achieving accurate identification and parameter calculation of multiple fragments, significantly enhancing the detection capability and analysis efficiency of traditional laser screens.

The invention relates to a low-junction capacitance symmetric transient voltage suppressor diode and a preparation method thereof. The preparation method comprises the steps of silicon wafer cleaning, N-type doping, oxidation, photoetching, oxide layer removal, slotting corrosion, passivation, surface corrosion, electrode manufacturing, metal stripping and cutting. Wherein in the N-type doping step, POCl3 is used as a gas-phase phosphorus source, double-sided synchronous diffusion is carried out on a silicon wafer, and a shallow junction N-type region with the junction depth of 1.5-3.0 microns is formed; in the oxidation step, the silicon wafer with the shallow junction N-type region is subjected to high-temperature oxidation in an oxygen-containing atmosphere, phosphorus atoms are driven to be redistributed from the surface to the inside, a doping section with the phosphorus concentration gradually changing from the surface of the silicon wafer to the inside is formed, and a surface oxidation layer is synchronously grown. According to the preparation method disclosed by the invention, the junction capacitance is reduced, and the symmetry, the response speed and the pulse endurance capability of the bidirectional transient voltage suppression diode are improved by improving the doping uniformity.