The invention discloses a method for manufacturing a fast-recovery glass package diode with an ultra-high voltage above 13,000 V. The method comprises the steps that N type semiconductor silicon materials are adopted as a semiconductor substrate, N+ type impurities are doped on the N type semiconductor substrate, an N+ type impurity layer on one face of the semiconductor substrate is removed, P+ type impurities are dually doped on exposed N- type semiconductor materials, then heavy metal platinum doping is carried out, metallization layers on the two faces of a silicon wafer are manufactured through a vacuum coating technology, a plurality of chips are bonded to a pipe core assembly in a metallurgy mode, the silicon wafer is divided into pipe cores of the needed size, the divided pipe core assembly and a lead assembly are bonded through high-temperature sintering and metallurgy, glass passivation and packaging are carried out, adjusted glass powder paste coats the twelve pipe cores connected in series, and manufacturing of the glass package diode is completed. The method has the advantages of being high in voltage, small in forward direction, fast in reverse restoration, good in high-temperature work stability, high in long-term work stability and the like, and is widely applied to the field of aviation, aerospace, electronics, weapons, ships and the like.