The invention discloses a self-powered
silicon carbide intelligent
power module with boost and
negative voltage, and solves the problems of high conduction
internal resistance, large switching loss and incomplete turn-off caused by the fact that an existing intelligent
power module (IPM) is not integrated with a boost or step-down
chip and cannot provide optimal working
voltage for a SiC
MOSFET (
Metal-
Oxide-
Semiconductor Field Effect Transistor). The intelligent
power module comprises an insulating heat dissipation substrate, a
lead frame, a power device and a passive element which are integrated on the heat dissipation substrate, and a driving and power conversion
chip integrated on the
lead frame, the power device comprises a SiC
MOSFET, an IGBT, a SiC SBD and an FRD, the passive element comprises a sampling
resistor, an
inductor and a
capacitor, and the driving and power supply conversion
chip comprises an HVIC, an LVIC1, an LVIC2, a
Boost converter and a
Buck converter. By means of the internally-integrated power conversion circuit, 18V positive
voltage and-3V
negative voltage can be generated only through 15V external power supply, the optimal driving requirement of the SiC
MOSFET is met, meanwhile, the conventional driving
voltage of the IGBT is reserved, and the power conversion circuit is suitable for motor driving and inversion systems in the fields of
consumer household appliances, industry,
new energy and the like.