Production technology of controllable silicon

A production process and silicon wafer technology, applied in the field of thyristor production process, can solve the problems of reduced voltage level, impact on production efficiency, and great damage to the minority carrier life of the device, so as to improve the reverse voltage, improve the effective utilization rate, The effect of reducing the chip area

Active Publication Date: 2010-12-01
江苏吉莱微电子股份有限公司
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Problems solved by technology

[0002] At present, the conventional thyristor production process, the 3-hour chip, the thickness of the chip is between 200 and 230 microns, the conventional high-temperature breakthrough condition: 1270 degrees, 150-180 hours, and when producing 4 hours or more chips, in order to ensure the work In the process, the silicon wafer does not break or less cracks, the thickness of the slice must be increased to 250-260 microns, and the punch-through diffusion is the same as other conventional diffusion, the slower the diffusion process goes, the punch-through time for a slice thickness of 250 is

Method used

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Embodiment 1

[0014] The thyristor production process of the present invention includes the steps of oxidation, photolithography punch-through ring, punch-through diffusion, short base diffusion and photolithography cathode, and aluminum steaming, alloying and retention are added between the photolithography punch-through ring and the step of punch-through diffusion alloy layer step,

[0015] The aluminum evaporation step is as follows: put the thyristor chip after the photolithography through-ring into the high vacuum electron beam evaporation table for aluminum evaporation operation, the vacuum degree is 2×10 -4 Pa, evaporation rate 25 seconds, aluminum purity ≥ 99.9%, and the final aluminum evaporation thickness obtained is 0.5 microns;

[0016] The alloying process is as follows: perform alloying operation on the silicon controlled silicon chip after steaming aluminum in the alloy diffusion furnace, the alloy temperature is 550°C, the alloying time is 50 minutes, and the finally obtai...

Embodiment 2

[0019] Thyristor production process, including oxidation, lithography punch-through ring, punch-through diffusion, short base diffusion and photolithography cathode steps, adding steaming aluminum, alloy and retaining alloy layer steps between photolithography punch-through and punch-through diffusion steps,

[0020] The aluminum evaporation step is as follows: put the silicon controlled silicon chip after the photolithography punch-through into the high vacuum electron beam evaporation table for aluminum evaporation operation, the vacuum degree is 2×10 -4 Pa, evaporation rate 28 seconds, aluminum purity ≥ 99.9%, and the final aluminum evaporation thickness obtained is 0.8 microns;

[0021] The alloying step is as follows: perform alloying operation on the silicon-controlled silicon chip after steaming aluminum in an alloy diffusion furnace, the alloy temperature is 580°C, the alloying time is 80 minutes, and the finally obtained silicon-aluminum alloy concentration R □ =350...

Embodiment 3

[0024] Thyristor production process, including oxidation, lithography punch-through, punch-through diffusion, short base diffusion and photolithography cathode steps, the steps of lithography punch-through and punch-through diffusion are added with steps of steaming aluminum, alloy and retaining alloy layer,

[0025] The aluminum evaporation step is as follows: put the silicon controlled silicon chip after the photolithography punch-through into the high vacuum electron beam evaporation table for aluminum evaporation operation, the vacuum degree is 2×10 -4 Pa, evaporation rate 30 seconds, aluminum purity ≥ 99.9%, and the final aluminum evaporation thickness obtained is 1.0 microns;

[0026] The alloying step is as follows: perform alloying operation on the silicon-controlled silicon chip after steaming aluminum in an alloy diffusion furnace, the alloy temperature is 600°C, the alloying time is 100 minutes, and the finally obtained silicon-aluminum alloy concentration R □ = 2...

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Abstract

The invention relates to a production technology of controllable silicon, which comprises the following steps of oxidizing, photoetching and penetrating a ring, penetrating and diffusing, diffusing a short base region, and photoetching a cathode. The production technology is characterized in that the step of evaporating aluminum and alloy and retaining an alloy layer is added between the step of photoetching and penetrating the ring and the step of penetrating and diffusing. The production technology has the advantages that 1, as the diffusion rate of the aluminum in the silicon is far greater than that of the boron in the silicon, the production technology takes the aluminum as the penetrating and diffusing impurity source, so that the penetrating and diffusing time of the 4-inch silicon wafer (250-260um) is less than 180h; 2, as the impurity concentration of the aluminum diffusion is lower, the production technology further can effectively improve the backward voltage; and 3, as the transverse diffusion distance is 65-70% and the normal boron diffusion is 80%, the diffusion method can effectively improve the effective use ratio of the area of the chip and reduce the area of the chip.

Description

technical field [0001] The invention relates to a silicon controlled silicon production process. Background technique [0002] At present, the conventional thyristor production process, the 3-hour chip, the thickness of the chip is between 200 and 230 microns, the conventional high-temperature breakthrough condition: 1270 degrees, 150-180 hours, and when producing 4 hours or more chips, in order to ensure the work During the process, the silicon wafer does not break or less cracks, the thickness of the slice must be increased to 250-260 microns, and the punch-through diffusion is the same as other conventional diffusion, the slower the diffusion process goes, the punch-through time for a slice thickness of 250 to achieve the punch-through effect More than 500 hours (1270 degrees), 260 thick is more than 650 hours (1270 degrees) and sometimes even can not be penetrated, which greatly affects the production efficiency in production, the production process is extremely slow, an...

Claims

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Application Information

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IPC IPC(8): H01L21/332
Inventor 耿开远周健朱法扬
Owner 江苏吉莱微电子股份有限公司
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