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An LED epitaxial layer growth method and an epitaxial layer structure and an LED chip obtained through the method

A technology of LED chip and growth method, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low reverse voltage, and achieve the effect of improving reverse voltage, good transition, and reducing differences

Active Publication Date: 2015-12-02
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a method for growing an LED epitaxial layer structure, the resulting epitaxial layer structure and an LED chip to solve the technical problem of low reverse voltage in the existing LED epitaxial structure

Method used

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  • An LED epitaxial layer growth method and an epitaxial layer structure and an LED chip obtained through the method
  • An LED epitaxial layer growth method and an epitaxial layer structure and an LED chip obtained through the method
  • An LED epitaxial layer growth method and an epitaxial layer structure and an LED chip obtained through the method

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Experimental program
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Effect test

Embodiment 1

[0044] 1. Process the sapphire substrate for about 6 minutes at 1000°C and maintain the reaction chamber pressure at 150mbar in a hydrogen atmosphere;

[0045] 2. Cool down to 550°C, maintain the pressure in the reaction chamber at 550mbar, and feed NH 3 , TMGa grows a low-temperature buffer layer GaN with a thickness of 30nm on the sapphire substrate;

[0046] 3. Raise the temperature to 1100°C, maintain the pressure in the reaction chamber at 300mbar, and feed NH 3 , TMGa, continuous growth of 2-4μm undoped GaN;

[0047] 4. Then pass into NH 3 , TMGa, SiH 4 Continuous growth of Si-doped N-type GaN, Si doping concentration 9E+18atom / cm 3 , the total thickness is controlled at 2 μm;

[0048] 5. Periodically grow the luminescent layer MQW, the pressure of the reaction chamber is maintained at 300mbar, and NH is fed at a low temperature of 700°C 3 , TEGa, TMIn growth doped In thickness of 2.5nmIn x Ga (1-x) N(x=0.15) layer, heat up to 800°C and feed NH 3 , TEGa grows a ...

Embodiment 2

[0054] 1. Process the sapphire substrate for about 6 minutes at 1100°C and maintain the reaction chamber pressure at 200mbar in a hydrogen atmosphere;

[0055] 2. Cool down to 600°C, maintain the pressure in the reaction chamber at 600mbar, and feed NH 3 , TMGa grows a low-temperature buffer layer GaN with a thickness of 40nm on a sapphire substrate;

[0056] 3. Raise the temperature to 1100°C, maintain the pressure in the reaction chamber at 300mbar, feed NH3 and TMGa, and continue to grow 2μm undoped GaN;

[0057] 4. Then pass into NH3, TMGa, SiH 4 Continuous growth of N-type GaN doped with Si, Si doping concentration 2E+19atom / cm 3 , the total thickness is controlled at 4 μm;

[0058]5. Periodically grow the light-emitting layer MQW, the pressure of the reaction chamber is maintained at 350mbar, and the thickness of doped In is 3nmIn by feeding NH, TEGa, and TMIn at a low temperature of 750°C. x Ga (1-x) N(x=0.25) layer, heat up to 850°C and feed NH 3 , TEGa grows a G...

Embodiment 3

[0064] 1. Process the sapphire substrate for about 6 minutes at 1050°C and maintain the reaction chamber pressure at 150mbar in a hydrogen atmosphere;

[0065] 2. Cool down to 550°C, maintain the pressure in the reaction chamber at 550mbar, and feed NH 3 , TMGa grows a low-temperature buffer layer GaN with a thickness of 36nm on a sapphire substrate;

[0066] 3. Raise the temperature to 1120°C, maintain the pressure in the reaction chamber at 300mbar, and feed NH 3 , TMGa, continuous growth of 3μm undoped GaN;

[0067] 4. Then pass into NH 3 , TMGa, SiH 4 Continuous growth of Si-doped N-type GaN, Si doping concentration 1E+19atom / cm 3 , the total thickness is controlled at 3 μm;

[0068] 5. The luminescent layer MQW is grown periodically, the pressure of the reaction chamber is maintained at 300mbar, and NH is fed at a low temperature of 740°C 3 , TEGa, TMIn growth doped In thickness of 2.7nmIn x Ga (1-x) N(x=0.2) layer, heat up to 840°C and feed NH 3 , TEGa grows a G...

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Abstract

The invention provides an LED epitaxial layer growth method and an epitaxial layer structure and an LED chip obtained through the method. The growth method for the epitaxial layer growth comprises the following steps of growing a P-type AlGaN layer and a first P-Type GaN layer arranged on the top surface of the P-type AlGaN layer; and growing a shield layer between the P-type AlGaN layer and the first P-Type GaN layer, of which the shield layer is a P-type AlGaN / InGaN superlattice structure. In the growing of the P-type AlGaN layer, the growth temperature is 750-800 DEG C; the Al dosage concentration is 1.8E+20-2.2E+20atom / cm<3>;and the Mg dosage concentration is 1E+20-2E+20atom / cm<3>. In the growing of the P-type AlGaN / InGaN superlattice structure, the growth temperature is 850-900 DEG C; the Al dosage concentration is 2E+20-3E+20atom / cm<3>;and the Mg dosage concentration is 1E+20-2E+20atom / cm<3>.In the LED epitaxial layer structure provided by the invention, the P-type AlGaN / InGaN superlattice structure is inserted between the P-type AlGaN layer and the P-Type GaN layer, so that on one hand, deects of large quantities of dislocation of quantum well areas are overcome to prevent leakage passages to form between the dislocation defects and the P-Type GaN layer, and meanwhile, capability of obstructing quantum from overflowing from the multi-quantum well areas are improved.

Description

technical field [0001] The invention relates to the field of LED epitaxial layers with superlattice structure layers, in particular, to a method for growing an LED epitaxial layer structure, the resulting epitaxial layer structure and an LED chip. Background technique [0002] Gallium nitride-based materials, including InGaN, GaN and AlGaN alloys, are direct bandgap semiconductors, and their bandgap is continuously adjustable from 0.7 to 6.2eV. They have excellent properties such as wide direct bandgap, strong chemical bonds, high temperature resistance, and corrosion resistance. , is an ideal material for the production of short-wavelength high-brightness light-emitting devices, ultraviolet light detectors and high-temperature and high-frequency microelectronic devices. It has been widely used in full-color large-screen displays, LCD backlights, signal lights or lighting and other fields. Such as figure 1 Shown is an existing LED epitaxial layer structure, which includes a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/04
CPCH01L33/04H01L33/32
Inventor 郭嘉杰苏军徐迪
Owner XIANGNENG HUALEI OPTOELECTRONICS
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