Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof. The light-emitting diode epitaxial wafer is characterized by comprising a low-temperature buffer layer GaN, an undoped GaN layer, a uAl superlattice layer, an N-type GaN layer, a first barrier layer, a shallow quantum well layer, a multi-quantum well layer, an electronic barrier layer, an Mg-doped P-type GaN layer and a CTL layer, wherein the undoped GaN layer is located on the low-temperature buffer layer GaN; the uAl superlattice layer is located on the undoped GaN layer; the N-type GaN layer is located on the uAl superlattice layer; the first barrier layer is located on the N-type GaN layer; the shallow quantum well layer is located on the first barrier layer; the multi-quantum well layer is located on the shallow quantum well layer; the electronic barrier layer is located on the multi-quantum well layer; the Mg-doped P-type GaN layer is located on the electronic barrier layer; and the CTL layer is located on the Mg-doped P-type GaN layer. According to the light-emitting diode epitaxial wafer and the preparation method thereof disclosed by the invention, the backward voltage can be significantly improved by adding the uAl superlattice layer structure.

Description

technical field [0001] The present application relates to an epitaxial wafer of a light-emitting diode and a manufacturing method thereof, and more particularly, to an epitaxial wafer of a light-emitting diode with a reverse voltage boost and a manufacturing method thereof. Background technique [0002] A light-emitting diode (Light-EmittingDiode, referred to as LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, etc., and is being rapidly and widely used. [0003] Gallium nitride-based materials are usually used to make LEDs, also known as GaN-based LEDs. In recent years, research on GaN-based LEDs has continued to deepen, and i...

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Problems solved by technology

[0004] However, the reverse voltage of the GaN-based LED epitaxial wafer prepared by the prior art is low, which cannot effectively meet the needs of customers and enterprises. Therefore, the present invention provides a new light-emitting diode epitaxial wafer and its manufacturing method to solve the above problems

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