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A kind of epitaxial wafer of light-emitting diode and its manufacturing method

A technology for light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as quantum well band bending, lattice mismatch, etc., to reduce defect density, improve buffering and interception capabilities, and improve current flow. The effect of expansion

Active Publication Date: 2015-12-09
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The electron blocking layer in the existing epitaxial wafer blocks the transition of holes to the quantum well while blocking electrons, and there will be a lattice mismatch between the electron blocking layer and the quantum well layer, thereby forming a stress accumulation area. lead to severe band bending of the quantum well near the p-type layer

Method used

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  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method
  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method
  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method

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Embodiment 1

[0022] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 1 , The epitaxial wafer includes:

[0023] The substrate 11 and the buffer layer 12, the n-type layer 13, the multiple quantum well layer 14, and the p-type layer 15 laminated on the substrate 11 in turn, the p-type layer 15 is directly arranged on the multiple quantum well layer 14, and the multiple quantum well layer 14 includes a first multiple quantum well layer 141 and a second multiple quantum well layer 142, the first multiple quantum well layer 141 consists of several In a Ga 1-a The N quantum well layer 1411 and several quantum barrier layers 1412 are alternately laminated, and at least one of the several quantum barrier layers 1412 of the first multiple quantum well layer 141 is Al x In y Ga 1-x-y N layer, where 0b Ga 1-b The N quantum well layer and a plurality of the quantum barrier layers are alternately stacked, and a≤b.

[0024] In specific implementation, ...

Embodiment 2

[0027] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 2 , The epitaxial wafer includes:

[0028] The substrate 21 and the buffer layer 22, the n-type layer 23, the multiple quantum well layer 24 and the p-type layer 25 which are sequentially stacked on the substrate 21, the p-type layer 25 is directly arranged on the multiple quantum well layer 24, the multiple quantum well layer 24 includes a first multiple quantum well layer 241 and a second multiple quantum well layer 242. The growth temperature of the first multiple quantum well layer 241 is higher than the growth temperature of the second multiple quantum well layer 242. The first multiple quantum well layer 141 consists of several In a Ga 1-a The N quantum well layer 2411 and several quantum barrier layers 2412 are alternately stacked, and at least one of the several quantum barrier layers 2412 of the first multiple quantum well layer 241 is Al x In y Ga 1-x-y N lay...

Embodiment 3

[0044] The embodiment of the present invention provides a method for manufacturing an epitaxial wafer of a light emitting diode, see image 3 , The method includes:

[0045] Step 301: Provide a substrate, and sequentially grow a buffer layer and an n-type layer on the substrate.

[0046] Step 302: Growing a first multiple quantum well layer on the n-type layer. The first multiple quantum well layer consists of several In a Ga 1-a The N quantum well layer and a plurality of quantum barrier layers are alternately laminated, and at least one of the plurality of quantum barrier layers in the first multiple quantum well layer is Al x In y Ga 1-x-y N layer, where 0

[0047] Step 303: Using low temperature to grow a second multiple quantum well layer on the first multiple quantum well layer, the second multiple quantum well layer is composed of several In b Ga 1-b The N quantum well layer and several quantum barrier layers are alternately stacked, and a≤b.

[0048] In specific ...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method of the light emitting diode epitaxial wafer and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, a buffer layer, an n-type layer, a multi-quantum well layer and a p-type layer, the buffer layer, the n-type layer, the multi-quantum well layer and the p-type layer are stacked on the substrate in sequence, the p-type layer is directly arranged on the multi-quantum well layer which comprises a first multi-quantum well layer and a second multi-quantum well layer, a plurality of InaGa1-aN quantum well layers and a plurality of quantum barrier layers are stacked alternately to form the first multi-quantum well layer, at least one of the quantum barrier layers is the AlxInyGa1-x-yN layer, wherein 0 <x <1, 0<= y <0.5. A plurality of InbGa1-bN quantum well layers and a plurality of quantum barrier layers are stacked alternately to form the second multi-quantum well layer, and a <=b. Due to the scheme, the defect concentration of the second multi-quantum well layer is reduced, barrier height is increased, buffering and intercepting abilities are improved, luminous efficiency of devices is increased, and the problems of lattice mismatch and band bending caused by an electron blocking layer are solved.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] The LED chip is a semiconductor crystal, which is the core component of the LED. The LED chip includes an epitaxial wafer and electrodes made on the epitaxial wafer. [0003] Among them, the epitaxial wafer includes a substrate and a buffer layer, an n-type layer, a multiple quantum well layer, and a p-type layer sequentially stacked on the substrate. The multiple quantum well layer is a multilayer formed by alternately growing quantum barrier layers and quantum well layers. The structure, and the quantum barrier layer and the quantum well layer are made of different materials. The quantum barrier layer in the existing multiple quantum well layer is generally made of undoped GaN, and the quantum well layer is generally made of InGaN. Since the energy difference...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/02
Inventor 王明军魏世祯胡加辉
Owner HC SEMITEK CORP
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