The invention discloses a manufacturing method for an
infrared light emitting diode with an embedded extended
electrode. The manufacturing method for the
infrared light emitting diode with the embedded extended
electrode includes that forming a
corrosion resisting layer, an armoring layer, an
ohmic contact layer, a first current extension layer, a first limit layer, an
active layer, a second limit layer and a second current extension layer on an epitaxial substrate in sequence; forming a
metal reflector layer on the second current extension layer through
evaporation; bonding a
metal reflecting layer to a base plate; removing the epitaxial substrate and
corrosion resisting layer to
expose the armoring layer; forming an extended
electrode pattern channel in the surface of the armoring layer, wherein the channel is deep enough to
expose the
ohmic contact layer; evaporating
metal material in the channel to form the extended electrode; manufacturing a bonding pad electrode at the surface of the armoring layer, and communicating the bonding pad electrode with the extended electrode; evaporating a back electrode at the back of the base plate, removing protecting
layers of the bonding pad electrode and extended electrode, and shredding to obtain the
infrared light emitting diode with the embedded extended electrode. The manufacturing method for the infrared light emitting
diode with the embedded extended electrode is capable of improving the reliability of the extended electrode, obtaining better current extension effect and improving the light emitting efficiency of the infrared light emitting
diode.