Semiconductor luminescent device and mfg method thereof

A light-emitting device and manufacturing method technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in growing GaN, poor crystal integrity, and low doping efficiency of P-type GaN, so as to improve the effect of current expansion and eliminate current Blocking effect, the effect of simple and easy process
CN101159301AInactive Publication Date: 2008-04-09SUN YAT SEN UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
SUN YAT SEN UNIV
Publication Date
2008-04-09
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a semiconductor illuminating device, which comprises a substrate and a semiconductor extended laminated layer that is laminated on the substrate. The semiconductor extended laminated layer sequentially comprises, from bottom to top, an N-type layer, an illuminating layer, and a P-type layer. An electrode is equipped on the lower surface of the substrate. A P-type electrode is equipped on the upper surface of the P-type layer, wherein part of the P-type layer is etched into the N-type layer and equipped with an N-type electrode, meanwhile, a conductor is equipped in this part of the N-type layer, one end of the conductor is connected with the N-type electrode, and the other end of the conductor is contacted with the substrate. The conductor is composed of a cylindrical through-hole and conducting material in the through-hole. The conductor can also be extended to the bottom of the substrate and connected with the electrode on the lower surface of the substrate. The invention can effectively reduce the operating voltage and improves the output power of the semiconductor illuminating device. Furthermore, the invention also discloses a method of manufacturing the semiconductor illuminating device.
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Description

technical field

[0001] The invention relates to a semiconductor light emitting device and a manufacturing method thereof. Background technique

[0002] III-V nitride semiconductor materials are widely used in violet, blue, green and white light-emitting diodes, violet lasers for high-density optical storage, ultraviolet light detectors, and high-power high-frequency electronic devices. However, due to the lack of suitable substrates, current high-quality GaN-based material films are usually grown on sapphire or SiC substrates, but both substrates are relatively expensive, especially SiC, and are relatively small in size. In addition, sapphire has the disadvantages of extremely high hardness, non-conductivity, and poor thermal conductivity.

[0003] In order to overcome the above shortcomings, people have been continuously exploring the growth of GaN using Si as a substrate. It is expected that the heteroepitaxial growth of III-nitride light-emitting devices on Si substrates...

Claims

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