Semiconductor luminescent device and mfg method thereof

Abstract

The invention discloses a semiconductor illuminating device, which comprises a substrate and a semiconductor extended laminated layer that is laminated on the substrate. The semiconductor extended laminated layer sequentially comprises, from bottom to top, an N-type layer, an illuminating layer, and a P-type layer. An electrode is equipped on the lower surface of the substrate. A P-type electrode is equipped on the upper surface of the P-type layer, wherein part of the P-type layer is etched into the N-type layer and equipped with an N-type electrode, meanwhile, a conductor is equipped in this part of the N-type layer, one end of the conductor is connected with the N-type electrode, and the other end of the conductor is contacted with the substrate. The conductor is composed of a cylindrical through-hole and conducting material in the through-hole. The conductor can also be extended to the bottom of the substrate and connected with the electrode on the lower surface of the substrate. The invention can effectively reduce the operating voltage and improves the output power of the semiconductor illuminating device. Furthermore, the invention also discloses a method of manufacturing the semiconductor illuminating device.

Description

technical field [0001] The invention relates to a semiconductor light emitting device and a manufacturing method thereof. Background technique [0002] III-V nitride semiconductor materials are widely used in violet, blue, green and white light-emitting diodes, violet lasers for high-density optical storage, ultraviolet light detectors, and high-power high-frequency electronic devices. However, due to the lack of suitable substrates, current high-quality GaN-based material films are usually grown on sapphire or SiC substrates, but both substrates are relatively expensive, especially SiC, and are relatively small in size. In addition, sapphire has the disadvantages of extremely high hardness, non-conductivity, and poor thermal conductivity. [0003] In order to overcome the above shortcomings, people have been continuously exploring the growth of GaN using Si as a substrate. It is expected that the heteroepitaxial growth of III-nitride light-emitting devices on Si substrates...

AI Technical Summary

Problems solved by technology

[0004] However, compared to sapphire and SiC, it is more difficult to grow GaN on Si substrates because of the larger thermal and lattice mismatch between Si and GaN materials

The difference in thermal expansion coefficient between Si and GaN will cause cracks in the GaN film, and the large lattice mismatch will cause high dislocation density in the GaN epitaxial layer

Although the manufacturing technology of GaN-based LEDs on Si substrates has achieved many exciting results, there are still defects of high operating voltage and low output power. On the one hand, there is a large gap between the thermal expansion coefficients of Si and GaN. The GaN film is cracked due to the combination, and the difference in lattice constant will cause high dislocation density in the GaN epitaxial layer. The Si substrate also has serious light absorption problems. In order to solve the problems of cracking, lattice mismatch and light absorption, people usually Introduce various buffer layers (such as AlN / GaN) and insertion layers (such as the DBR reflective layer introduced to solve the light absorption problem), but the introduction of these foreign layers will increase the operating voltage of the device; on the other hand, in the GaN-based LED structure There is a large energy band discontinuity between Si and GaN, which increases the turn-on voltage, and poor crystal integrity leads to low doping efficiency of P-type GaN, resulting in increased series resistance

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