Semiconductor luminescent device and manufacturing method thereof

Abstract

The invention discloses a semiconductor light-emitting device, which comprises a substrate and a semiconductor epitaxial stack stacked on the substrate. The semiconductor epitaxial stack includes an N-type layer, a light-emitting layer and a P-type layer from bottom to top. An electrode is provided on the lower surface of the substrate. A P-type electrode is provided on the upper surface of the P-type layer, wherein a part of the P-type layer is etched to the N-type layer, and an N-type electrode is provided. The N-type electrode is connected, and the other end is in electrical contact with the substrate; the conductor is composed of a columnar through hole and a conductive substance filled in the through hole; the conductor can also extend to the bottom of the substrate and connect with the bottom surface of the substrate The electrodes are connected. The invention can effectively reduce the operating voltage of the semiconductor light emitting device and increase the output power of the semiconductor light emitting device. In addition, the invention also discloses a manufacturing method of the semiconductor light emitting device.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting device and a manufacturing method thereof. Background technique [0002] III-V nitride semiconductor materials are widely used in violet, blue, green and white light-emitting diodes, violet lasers for high-density optical storage, ultraviolet light detectors, and high-power high-frequency electronic devices. However, due to the lack of suitable substrates, high-quality GaN-based material films are usually grown on sapphire or SiC substrates, but both of these substrates are expensive, especially SiC, and both are relatively small in size. In addition, sapphire has the disadvantages of extremely high hardness, non-conductivity, and poor thermal conductivity. [0003] In order to overcome the above shortcomings, people have been continuously exploring the growth of GaN using Si as a substrate. It is expected that heteroepitaxial growth of group III nitride light-emitting devices on Si subst...

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Problems solved by technology

[0004] However, compared to sapphire and SiC, it is more difficult to grow GaN on Si substrates because of the larger thermal and lattice mismatch between Si and GaN materials

The difference in thermal expansion coefficient between Si and GaN will cause cracks in the GaN film, and the large lattice mismatch will cause high dislocation density in the GaN epitaxial layer

Although the manufacturing technology of GaN-based LEDs on Si substrates has achieved many exciting results, there are still defects of high operating voltage and low output power. On the one hand, there is a large gap between the thermal expansion coefficients of Si and GaN. The GaN film is cracked due to the combination, and the difference in lattice constant will cause high dislocation density in the GaN epitaxial layer. The Si substrate also has serious light absorption problems. In order to solve the problems of cracking, lattice mismatch and light absorption, people usually Introduce various buffer layers (such as AlN / GaN) and insertion layers (such as the DBR reflective layer introduced to solve the light absorption problem), but the introduction of these foreign layers will increase the operating voltage of the device; on the other hand, in the GaN-based LED structure There is a large energy band discontinuity between Si and GaN, which increases the turn-on voltage, and poor crystal integrity leads to low doping efficiency of P-type GaN, resulting in increased series resistance

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