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Semiconductor epitaxial structure and preparation method thereof, and LED chip

An LED chip and epitaxial structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of unfavorable red LED antistatic devices, restricting the utilization rate of light-emitting area, and speeding up the aging speed of chips, etc., to facilitate current expansion. , the effect of enhancing the current expansion capability and increasing the current expansion capability

Pending Publication Date: 2021-11-12
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current red light epitaxial structure is prone to current crowding effect due to poor current lateral expansion, which not only restricts the utilization rate of the light emitting area but also causes the local temperature of the chip to rise, accelerating the aging speed of the chip; moreover, the electron flow directly flows into the chip without expansion. The active layer is also not conducive to the antistatic performance of red LEDs and the use of devices, especially for LED chips with a mini structure, due to the small size of the product, the requirements for current expansion capability and antistatic performance are higher

Method used

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  • Semiconductor epitaxial structure and preparation method thereof, and LED chip
  • Semiconductor epitaxial structure and preparation method thereof, and LED chip
  • Semiconductor epitaxial structure and preparation method thereof, and LED chip

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Embodiment 1

[0071] This embodiment provides a semiconductor epitaxial structure, referring to figure 2 and image 3 , the epitaxial structure includes: a growth substrate 100, having a first surface and a second surface oppositely disposed; a first current spreading layer 500, disposed above the first surface of the growth substrate 100; an epitaxial layer 600, disposed on the second The surface of a current spreading layer 500 , and the epitaxial layer 600 sequentially includes a first semiconductor layer 601 , an active layer 602 and a second semiconductor layer 603 ; the second current spreading layer 700 is disposed above the second semiconductor 603 . Wherein, the first current spreading layer 500 includes first doped layers 501 and second doped layers 502 arranged alternately, and the doping concentration of the first doped layers 501 is greater than that of the second doped layers 502 . Since the doping concentration of the first doped layer 501 is relatively large, it is conduci...

Embodiment 2

[0078] This embodiment provides a kind of LED chip, refer to image 3 , Figure 4 and Figure 5 , the LED chip includes: a substrate 900, having a first surface and a second surface oppositely disposed; a second current spreading layer 700, located above the substrate 900; an epitaxial layer 600, located above the second current spreading layer 700, the epitaxial layer 600 sequentially includes a second semiconductor layer 603, an active layer 602, and a first semiconductor layer 601 on the surface of the second current spreading layer 700; the first current spreading layer 500 is located above the first semiconductor layer 601, and the first current The extension layer 500 includes first doped layers 501 and second doped layers 502 arranged alternately, and the doping concentration of the first doped layers 501 is greater than that of the second doped layers 502 .

[0079] Specifically, refer to Figure 4 or Figure 5 , the substrate 900 includes but not limited to Mo sub...

Embodiment 3

[0088] This embodiment provides a method for preparing a semiconductor epitaxial structure, referring to Image 6 , including the following steps:

[0089] S101: Provide a growth substrate, the growth substrate has a first surface and a second surface oppositely arranged;

[0090] refer to figure 2 1. A growth substrate 100 is provided. The material of the growth substrate 100 includes but not limited to GaAs. In this embodiment, the GaAs growth substrate 100 is taken as an example.

[0091] refer to figure 2 , the buffer layer 200, the etch stop layer 300, and the ohmic contact layer 400 are sequentially formed on the first surface of the growth substrate 100, specifically, the chemical vapor deposition method may be used to sequentially deposit them. Wherein, the etch stop layer 300 is an N-type etch stop layer 300 made of N-GaInP; the material of the ohmic contact layer 400 is N-GaAs.

[0092] S102: Forming a first current spreading layer including alternately arrange...

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Abstract

The invention discloses a semiconductor epitaxial structure and a preparation method thereof, and an LED chip, and the structure comprises a growth substrate which is provided with a first surface and a second surface, and the first surface and the second surface are opposite to each other; a first current expansion layer arranged above the first surface of the growth substrate; an epitaxial layer which is arranged on the surface of the first current expansion layer and sequentially comprises a first semiconductor layer, an active layer and a second semiconductor layer; and a second current expansion layer arranged above the second semiconductor layer; wherein the first current expansion layer comprises a first doping layer and a second doping layer which are alternately arranged, and the doping concentration of the first doping layer is larger than that of the second doping layer. According to the invention, the high and low concentration doping layers of the first current expansion layer are alternately arranged, so that current expansion is facilitated, and the anti-static performance of the chip is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a semiconductor epitaxial structure, a preparation method thereof, and an LED chip. Background technique [0002] Light Emitting Diode (Light Emitting Diode) is a semiconductor device that can directly convert electrical energy into light energy, and is a solid-state cold light source. The inherent physical characteristics of LED enable it to work at low voltage / current, and have the characteristics of high luminous efficiency, small size, long life, and energy saving. Therefore, LED has now become the core light-emitting device in the fields of traffic display, medical lighting, military communication and so on. At present, with years of technical research and development, red LED chip technology is becoming more and more mature. [0003] Red LED chips are generally made of AlGaInP quaternary materials, and the epitaxial technology of red LEDs is mainly the epita...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/14H01L33/0062
Inventor 王立伟刘晓峰李维环王笃祥
Owner TIANJIN SANAN OPTOELECTRONICS
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