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High-brightness near ultraviolet LED and preparation method thereof

A near-ultraviolet, high-brightness technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as affecting luminous efficiency, unable to eliminate V-type dislocations, increasing quantum well and barrier layer stress mismatch, etc., to improve luminescence. Efficiency, effect of improving current spreading effect

Active Publication Date: 2015-04-22
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, using the SiN insertion layer method cannot eliminate the V-type dislocations generated by the low-temperature growth of the active region; and the use of the InGaN / AlGaN quantum well structure in the active region will increase the stress mismatch between the quantum well and the barrier layer, and aggravate the electrons and holes. separated in space, which in turn affects the luminous efficiency

Method used

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  • High-brightness near ultraviolet LED and preparation method thereof
  • High-brightness near ultraviolet LED and preparation method thereof

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Effect test

Embodiment 1

[0020] Use Aixtron company, tightly coupled vertical reaction chamber MOCVD growth system. Trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) were used as Group III sources during the growth process, ammonia (NH 3 ) as a Group V source, silane (SiH 4 ) as an n-type dopant source, dimagnesocene (Cp 2 Mg) as a p-type dopant source, the patterned Al 2 o 3 The substrate 101 is heated to 1080-1100 degrees centigrade, and the pressure in the reaction chamber is 100 torr. 2 Under treatment for 5 minutes, then cool down to 530-550 degrees Celsius in the patterned Al 2 o 3On the substrate, the pressure of the reaction chamber is 500torr, under the hydrogen (H2) atmosphere, the V / III molar ratio is 500-1300, and the GaN nucleation layer after three-dimensional growth of 20-30 nanometers, at 1000-1500°C, the reaction chamber pressure is 200-300torr, in hydrogen (H 2 ) atmosphere, the V / III molar ratio is 1000-1300; grow a 1-3 micron thick high-temperature u-...

Embodiment 2

[0022] Use Aixtron company, tightly coupled vertical reaction chamber MOCVD growth system. Trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) were used as Group III sources during the growth process, ammonia (NH 3 ) as a Group V source, silane (SiH 4 ) as an n-type dopant source, dimagnesocene (Cp 2 Mg) as a p-type dopant source, the patterned Al 2 o 3 The substrate is heated to 1080-1100 degrees Celsius, the pressure in the reaction chamber is 100torr, and the H 2 Under treatment for 5 minutes, then cool down to 530-550 degrees Celsius in the patterned Al 2 o 3 On the substrate, the pressure of the reaction chamber is 500torr, under the hydrogen (H2) atmosphere, the V / III molar ratio is 500-1300, and the GaN nucleation layer after three-dimensional growth of 20-30 nanometers, at 1000-1500°C, the reaction chamber pressure is 200-300torr, in hydrogen (H 2 ) atmosphere, the V / III molar ratio is 1000-1300; grow a 1-3 micron thick high-temperature u-G...

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Abstract

The invention discloses a high-brightness near ultraviolet LED and a preparation method of the high-brightness near ultraviolet LED, and belongs to the technical field of semiconductor photoelectronics. The LED structurally comprises a patterned sapphire substrate, a low-temperature GaN nucleating layer, a high-temperature non-doping GaN buffering layer, an n-type GaN layer, a stress release layer of an n-InxlGa1-x1N / Aly1Ga1-y1N quantum well structure, a low-temperature n-Aly1Ga1-y1N current spreading layer, an n-InxlGa1-xN / Aly1Ga1-yN multi-quantum well light-emitting layer, a p-Aly2Inx2Ga1-x2-y2N electronic barrier layer, a high-temperature p-type GaN layer and a p-type InGaN contact layer from bottom to top in sequence. The LED current spreading effect of the near ultraviolet LED can be improved by optimizing the n-type stress release layer and the n-type current spreading layer, and thus the light-emitting efficiency of the near ultraviolet LED is effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a high-brightness near-ultraviolet LED with a well-width gradient current expansion layer prepared by MOCVD (metal organic compound vapor phase epitaxy) technology. Background technique [0002] UV LEDs are diodes that emit ultraviolet light. It generally refers to LEDs with a central wavelength of light emission below 400nm. Ultraviolet LEDs (UV LEDs) are mainly used in biomedicine, anti-counterfeiting identification, purification (water, air, etc.), computer data storage, and military affairs. And with the development of technology, new applications will continue to appear to replace the original technology and products. UV LED has a broad market application prospect. For example, UV LED phototherapy instrument is a very popular medical device in the future, but the current technology is still growing period. As another major industry direction after se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/14H01L33/06H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/12H01L33/145H01L33/32
Inventor 贾传宇于彤军殷淑仪张国义童玉珍
Owner PEKING UNIV
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