Manufacturing method for infrared light emitting diode with embedded extended electrode
An extended electrode, infrared light-emitting technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of floating electrodes, side erosion, easy to fall off, etc., to reduce the light blocking area, increase the light emitting area, and avoid side erosion. Effect
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[0053] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0054] refer to Figure 1 to Figure 4 As shown, the first embodiment of an infrared light-emitting diode with embedded extended electrodes disclosed by the present invention; figure 1 It is an epitaxial structure of an infrared light emitting diode, and the epitaxial structure is an intermediate body for making an infrared light emitting diode with an embedded extended electrode.
[0055] The epitaxial structure includes an etching stop layer 2, a roughening layer 3, an ohmic contact layer 4, a first-type current spreading layer 5, a first-type confinement layer 6, and an active layer 7 on the upper surface of an epitaxial substrate 1 from bottom to top. , the second-type confinement layer 8 and the second-type current spreading layer 9 .
[0056] Wherein, the epitaxial substrate 1 is a GaAs substrate with a thickness of 300 μm. The materi...
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