Infrared light-emitting diode with embedded expanded electrode

An extended electrode, infrared light-emitting technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of side erosion, extended electrode suspension, easy to fall off, etc., to reduce the light blocking area, increase the light emitting area, and avoid side erosion. Effect

Inactive Publication Date: 2014-12-03
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide an infrared light-emitting diode with embedded extended electrodes to solve the problem that the traditional manufacturing process easily causes the side erosion of the epitaxial l

Method used

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  • Infrared light-emitting diode with embedded expanded electrode
  • Infrared light-emitting diode with embedded expanded electrode
  • Infrared light-emitting diode with embedded expanded electrode

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Embodiment Construction

[0060] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0061] refer to Figure 1 to Figure 4 As shown, the first embodiment of an infrared light-emitting diode with embedded extended electrodes disclosed by the present invention; figure 1 It is an epitaxial structure of an infrared light emitting diode, and the epitaxial structure is an intermediate body for making an infrared light emitting diode with an embedded extended electrode.

[0062] The epitaxial structure includes an etching stop layer 2, a roughening layer 3, an ohmic contact layer 4, a first-type current spreading layer 5, a first-type confinement layer 6, and an active layer 7 on the upper surface of an epitaxial substrate 1 from bottom to top. , the second-type confinement layer 8 and the second-type current spreading layer 9 .

[0063] Wherein, the epitaxial substrate 1 is a GaAs substrate with a thickness of 300 μm. The materi...

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Abstract

The invention discloses an infrared light-emitting diode with an embedded expanded electrode. An ohmic contact layer is arranged on one side of a light-emitting structure, a coarsening layer is arranged on the ohmic contact layer, a groove is formed in the coarsening layer, the expanded electrode is formed in the groove and is in contact with the ohmic contact layer to form ohmic contact, and a bonding pad electrode is manufactured on the surface of the coarsening layer with the masking technology, the photoetching technology and the evaporation technology and connected with the expanded electrode in an on mode. By means of the infrared light-emitting diode, the reliability of the expanded electrode can be improved, the better current expanding effect can be obtained, and the light-emitting efficiency of the infrared light-emitting diode can be improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an infrared light-emitting diode with embedded extended electrodes. Background technique [0002] Infrared light-emitting diodes have the advantages of low power consumption, small size and high reliability, and are widely used in communication, remote sensing devices and other fields. In the prior art, metal-organic compound vapor phase epitaxy is used to grow the epitaxial structure with quantum wells to achieve higher internal quantum efficiency; at the same time, flip-chip manufacturing processes such as metal mirrors and surface roughening are used to improve the external quantum efficiency of infrared light-emitting diodes. efficiency. [0003] The flip-chip manufacturing process usually uses extended electrodes to improve the current spreading effect, so as to obtain higher luminous efficiency. However, most of the flip-chip manufacturing processes in the p...

Claims

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Application Information

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IPC IPC(8): H01L33/38
CPCH01L33/38H01L33/22
Inventor 林志伟陈凯轩张永杨凯蔡建九白继锋卓祥景姜伟刘碧霞
Owner XIAMEN CHANGELIGHT CO LTD
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