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Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD

A high-brightness, near-ultraviolet technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problem of output power only input power

Active Publication Date: 2016-03-30
SINO NITRIDE SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The photoelectric conversion efficiency of ultraviolet LEDs with a wavelength above 385nm is significantly improved compared to short wavelengths, but the output power is only 15% of the input power

Method used

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  • Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD
  • Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD
  • Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD

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Embodiment 2

[0019] figure 1 It is a vertical cross-sectional view of a high-brightness near-ultraviolet LED with an asymmetric structure current spreading layer prepared by MOCVD technology in Example 1 of the present invention. figure 1 Al 2 o 3 Substrate 101, n-GaN 102, n-AlInGaN current spreading layer 103, InGaN / AlGaN multi-quantum well active layer 104, p-AlGaN electron blocking layer 105, p-GaN 106. Wherein, the In composition and the Al composition of the n-type current spreading layer are smaller than the In composition and the Al composition of the InGaN / AlGaN multi-quantum well active region; figure 2 It is a vertical plane view of a high-brightness near-ultraviolet LED with an asymmetric structure current spreading layer prepared by MOCVD technology in Example 2 of the present invention. figure 2 Al 2 o 3 Substrate 201, n-GaN 202, n-AlInGaN / AlGaN superlattice structure current spreading layer 203, InGaN / AlGaN multi-quantum well active layer 204, p-AlGaN electron blocking...

Embodiment 1

[0021] Use Aixtron company, tightly coupled vertical reaction chamber MOCVD growth system. Trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) were used as Group III sources during the growth process, ammonia (NH 3 ) as a Group V source, silane (SiH 4 ) as an n-type dopant source, dimagnesocene (Cp 2 Mg) as a p-type dopant source, first Al in the MOCVD reaction chamber 2 o 3 The substrate 101 is heated to 1080-1100 degrees Celsius at H 2 Under treatment for 5 minutes, and then cooled to 530-550 degrees Celsius in Al 2 o 3 On the substrate, the reaction chamber pressure is 500torr, under the hydrogen (H2) atmosphere, the GaN buffer layer after three-dimensional growth of 20-30 nanometers is grown, and the 2-4 micron thick n-GaN102 is grown at 1000-1500 degrees Celsius, in nitrogen (N 2 ) atmosphere, grow 15-30 nm thick n-Al at 750-850 degrees Celsius x In y Ga 1-x-y N current spreading layer 103, the electron concentration increases from 10 to 10 ...

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Abstract

The invention provides a method for preparing a high-efficiency near-ultraviolet LED with an asymmetric current expansion layer by using MOCVD. The method, by designing a novel LED structure, improves current expansion in the horizontal direction so as to increase the luminous efficiency of the near-ultraviolet LED. The method comprises growing an asymmetric n-type current expansion layer between n-GaN and an InGaN / AlGaN multi-quantum well active region; and optimizing the current expansion layer to be (1) an n-type AlInGaN current expansion layer with gradually-changed asymmetric Al component, In component, and n doping, (2) a multi-period n-type AlInGaN / AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping, (3) a multi-period n-type InGaN / AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping, or (4) a multi-period n-type AlInGaN / GaN / AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping. The method effectively increases the luminous efficiency of the near-ultraviolet LED by designing the novel current expansion layer structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and relates to a method for manufacturing a near-ultraviolet light-emitting diode, in particular to a method for preparing a high-brightness near-ultraviolet LED with an asymmetric structure current spreading layer by using MOCVD (metal organic compound vapor phase epitaxy) technology. Background technique [0002] The ultraviolet semiconductor light source will not only replace the existing mercury lamp ultraviolet light source and play a greater role in industrial photocuring, photocatalyst, ultraviolet lithography, ultraviolet sterilization, water purification, phototherapy, etc., but also develop general lighting, optical tweezers , plant growth, oil pipeline leak detection, archaeological applications, identification of true and false, etc. As another major industry direction after semiconductor lighting, semiconductor ultraviolet light source has attracted widespread a...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/32
Inventor 贾传宇殷淑仪张国义童玉珍
Owner SINO NITRIDE SEMICON
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