Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD

A high-brightness, near-ultraviolet technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problem of output power only input power
CN105449052AActive Publication Date: 2016-03-30SINO NITRIDE SEMICON +1
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SINO NITRIDE SEMICON
Publication Date
2016-03-30

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Abstract

The invention provides a method for preparing a high-efficiency near-ultraviolet LED with an asymmetric current expansion layer by using MOCVD. The method, by designing a novel LED structure, improves current expansion in the horizontal direction so as to increase the luminous efficiency of the near-ultraviolet LED. The method comprises growing an asymmetric n-type current expansion layer between n-GaN and an InGaN / AlGaN multi-quantum well active region; and optimizing the current expansion layer to be (1) an n-type AlInGaN current expansion layer with gradually-changed asymmetric Al component, In component, and n doping, (2) a multi-period n-type AlInGaN / AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping, (3) a multi-period n-type InGaN / AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping, or (4) a multi-period n-type AlInGaN / GaN / AlGaN superlattice-structured or quantum-well-structured hole expansion layer with gradually-changed asymmetric Al component, In component, and n doping. The method effectively increases the luminous efficiency of the near-ultraviolet LED by designing the novel current expansion layer structure.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor optoelectronics, and relates to a method for manufacturing a near-ultraviolet light-emitting diode, in particular to a method for preparing a high-brightness near-ultraviolet LED with an asymmetric structure current spreading layer by using MOCVD (metal organic compound vapor phase epitaxy) technology. Background technique

[0002] The ultraviolet semiconductor light source will not only replace the existing mercury lamp ultraviolet light source and play a greater role in industrial photocuring, photocatalyst, ultraviolet lithography, ultraviolet sterilization, water purification, phototherapy, etc., but also develop general lighting, optical tweezers , plant growth, oil pipeline leak detection, archaeological applications, identification of true and false, etc. As another major industry direction after semiconductor lighting, semiconductor ultraviolet light source has attracted widespread a...

Claims

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