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LED micro-display screen and preparing method thereof

A display screen and pixel structure technology, applied in static indicators, identification devices, instruments, etc., can solve problems such as the adverse effects of internal defects in LEDs, and achieve the effects of good current expansion capability, high transmittance, and high light transmittance

Active Publication Date: 2017-05-10
GOERTEK INC
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

And high temperature has adverse effects on the already made devices, such as the internal defects of LEDs.

Method used

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  • LED micro-display screen and preparing method thereof
  • LED micro-display screen and preparing method thereof
  • LED micro-display screen and preparing method thereof

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Embodiment Construction

[0031] The core of the present invention is to provide a method for preparing an LED micro-display, which reduces damage to devices caused by high-temperature processes on the premise of ensuring high light transmittance and good current expansion capability.

[0032] The invention also provides an LED micro-display prepared by using the preparation method, which will not cause high-temperature damage to devices under the premise of ensuring high light transmittance and good current expansion capability.

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to th...

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Abstract

The invention discloses a preparing method of an LED micro-display screen. The preparing method includes the steps that low-temperature bonding is carried out on a prepared graphene thin layer serving as a negative pole electrode and an n-GaN surface of an LED pixel structure on a display screen backing plate to form ohmic contact, and low-temperature bonding is carried out on the graphene thin layer and a metal connecting structure of a control circuit of the display screen backing plate. As the graphene thin layer can ensure high transmissivity, compared with an ITO layer, graphene has more excellent current conduction capacity and thermal diffusion capacity, connection between the graphene thin layer and n-GaN as well as the metal connecting structure is completed through the low-temperature bonding process, the graphene thin layer and n-GaN as well as the graphene thin layer and the metal connecting structure are connected through van der waals force, and the high-temperature process in the ITO layer manufacturing process is not needed, so that components of the LED micro-display screen are prevented from being damaged by high temperature. The invention further discloses an LED micro-display screen prepared through the preparing method.

Description

technical field [0001] The invention relates to the technical field of LED micro-displays, in particular to a method for preparing an LED micro-display. It also relates to an LED micro display screen prepared by applying the preparation method. Background technique [0002] LED micro-display technology has many advantages, such as active light emission, ultra-high brightness, long life, low operating voltage, high luminous efficiency, fast response speed, stable and reliable performance, wide operating temperature range, etc., and has become a hot technology. [0003] When the existing LED micro-display technology is making LED micro-displays, in order to achieve high light transmittance and good current spreading ability, the cathode surface of LED micro-displays is usually an ITO layer (i.e. conductive glass) covered by the entire surface. layer), and the production of the ITO layer requires a high-temperature annealing process to achieve high light transmittance and bott...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G09F9/33G09G3/32H01L27/15H01L27/12
CPCG09F9/33G09G3/32H01L27/1259H01L27/15
Inventor 冯向旭邹泉波陈培炫甘桃
Owner GOERTEK INC
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