The invention discloses a
laser stripping film LED (Light-Emitting
Diode) and a preparation method thereof. A
chip unit of the
laser stripping film LED comprises a type n layer, a
quantum well, a type p layer, a periodical
metal nanometer structure, an
electrode p, an insulating layer and an
electrode n, wherein the type p layer is formed on the
quantum well; the periodical
metal nanometer structure is embedded into the type p layer; the abovementioned structures inversely cover on a substrate; and a bonding pad p is arranged at one corner of a
chip. According to the
laser stripping film LED, the
coupling resonance functions of surface plasmons and a
quantum well structure are utilized, so that the
radiation compounding efficiency and light-emitting efficiency of the LED are increased greatly under bulk injection, and meanwhile, certain effects are achieved on green-yellow light and
ultraviolet light LEDs with low light-emitting efficiency;
laser scribing and corroding methods are adopted for partitioning the
chip unit, so that the warping of an epitaxial
wafer is reduced, and the
processing difficulty and cost are lowered; and specific to the bonding pad p, a
protection layer and silver layer
evaporation process is adopted, so that the manufacturing process of the bonding pad p is simplified, and the process cost is lowered; and a hot
phosphoric acid coarsening method is adopted, so that the process cost is lowered, and the light-emitting efficiency of the LED is increased.