Organic material and perovskite material combination-based full-solution flexible white-light device and fabrication method thereof

A technology of perovskite materials and organic materials, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of complex process and expensive manufacturing cost, and achieve simplified preparation process, high color rendering index, The effect of promoting efficient transmission

Inactive Publication Date: 2019-11-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems mentioned in the background technology, the present invention proposes an all-solution method flexible white light device based on the combination of organic materials and perovskite materials and its preparation method, which solves the complex process and high manufacturing cost in the prior art , the problem that requires precise regulation of the exciton recombination region

Method used

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  • Organic material and perovskite material combination-based full-solution flexible white-light device and fabrication method thereof
  • Organic material and perovskite material combination-based full-solution flexible white-light device and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] like figure 1 As shown, the all-solution flexible white light device based on the combination of organic materials and perovskite materials and its preparation method, the white light device shown from bottom to top are flexible substrate 1, anode 2, hole transport layer 3, blue light active Layer I (serving as a hole buffer layer at the same time) 4, perovskite red light-emitting layer II5, and organic green photoactive layer III (serving as an electron buffer layer at the same time) 6, cathode 7, and driving voltage 8. Wherein, the anode 2 is located on the surface of the flexible substrate 1 , and the white light device emits light under the drive of an external power source 8 .

[0035] The white light device structure from top to bottom is as follows:

[0036] PI-substrate / ITO / PEDOT:PSS(20nm) / TFB(5nm) / CsPbl 3 (10nm) / Alq 3 (5nm) / Ag(100nm)

[0037] The preparation method is:

[0038] Step 1: Spin-coat the hole transport layer PEDOT:PSS on the dry flexible substr...

Embodiment 2

[0045] like figure 1 As shown, the all-solution flexible white light device based on the combination of organic materials and perovskite materials and its preparation method, the white light device shown from bottom to top are flexible substrate 1, anode 2, hole transport layer 3, blue light active Layer I (serving as a hole buffer layer at the same time) 4, perovskite red light-emitting layer II5, and organic green photoactive layer III (serving as an electron buffer layer at the same time) 6, cathode 7, and driving voltage 8. Wherein, the anode 2 is located on the surface of the flexible substrate 1 , and the white light device emits light under the drive of an external power source 8 .

[0046] The white light device structure from bottom to top is as follows:

[0047] PI-substrate / ITO / PEDOT:PSS(20nm) / PTAA(5nm) / CsPbl 3 (20nm) / Alq 3 (5nm) / Ag(100nm)

[0048] The preparation method is:

[0049] Step 1: Spin-coat the hole transport layer PEDOT:PSS on the dry flexible subst...

Embodiment 3

[0056] like figure 1 As shown, the all-solution flexible white light device based on the combination of organic materials and perovskite materials and its preparation method, the white light device shown from bottom to top are flexible substrate 1, anode 2, hole transport layer 3, blue light active Layer I (serving as a hole buffer layer at the same time) 4, perovskite red light-emitting layer II5, and organic green photoactive layer III (serving as an electron buffer layer at the same time) 6, cathode 7, and driving voltage 8. Wherein, the anode 2 is located on the surface of the flexible substrate 1 , and the white light device emits light under the drive of an external power source 8 .

[0057] The white light device structure from bottom to top is as follows:

[0058] PI-substrate / ITO / PEDOT:PSS(20nm) / ploy-TPD(5nm) / CsPbl 3 (20nm) / Alq 3 (5nm) / Ag(100nm)

[0059] The preparation method is:

[0060] Step 1: Spin-coat the hole transport layer PEDOT:PSS on the dry flexible s...

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Abstract

The invention relates to an organic material and perovskite material combination-based full-solution flexible white-light device. The device sequentially comprises a substrate, a positive electrode, ahole transmission layer, an organic light-emitting active layer I, a perovskite light-emitting layer II, an organic light-emitting active layer III and a negative electrode from bottom to top. By thedevice, the problems that the process in the prior art is complicated, the manufacturing cost is high and an exciton composite region is needed to be accurately controlled are solved.

Description

technical field [0001] The invention relates to the technical field of organic semiconductor thin-film solar cells, in particular to a flexible white light device based on a combination of organic materials and perovskite materials and a preparation method thereof. Background technique [0002] In recent years, perovskite materials have attracted people's attention due to their excellent optoelectronic properties, such as high purity of luminous color, easy adjustment of luminescent color in the visible range, and high quantum yield. At the same time, the price of perovskite materials is much lower than that of organic light-emitting materials, and perovskite materials can be formed into films by solution method, and the preparation is simple. These properties make perovskite materials attractive candidates for next-generation flat panel displays and solid-state lighting. At present, monochromatic light-emitting diode devices based on perovskite materials, such as green lig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K71/60H10K85/10H10K85/60H10K50/13H10K71/00
Inventor 于军胜吴梦鸽王子君黄江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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